APT10021JFLL
1000V 37A 0.210Ω
POWER MOS 7
R
FREDFET
S
S
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
27
2
T-
D
G
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10021JFLL
UNIT
1000
Volts
Drain-Source Voltage
37
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
1
148
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
37
(Repetitive and Non-Repetitive)
1
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1000
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 18.5A)
TYP
MAX
UNIT
Volts
0.210
Ohms
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
4-2004
Characteristic / Test Conditions
050-7035 Rev C
Symbol
APT10021JFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 500V
ID = 37A @ 25°C
RG = 0.6Ω
20
INDUCTIVE SWITCHING @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
1560
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VDD = 667V, VGS = 15V
nC
ns
930
ID = 37A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
µJ
2515
VDD = 667V VGS = 15V
ID = 37A, RG = 5Ω
UNIT
pF
335
395
47
260
29
22
80
VDD = 500V
Fall Time
MAX
9750
1615
ID = 37A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
1250
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
148
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -37A)
1.3
Volts
18
V/ns
dv/
Peak Diode Recovery
dt
37
dv/
5
dt
t rr
Reverse Recovery Time
(IS = -37A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -37A, di/dt = 100A/µs)
Tj = 25°C
1.8
Tj = 125°C
7.4
IRRM
Peak Recovery Current
(IS = -37A, di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
30
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.18
0.9
0.7
0.12
0.10
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7035 Rev C
4-2004
0.20
0.14
0.3
0.06
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.02
0
0.05
10-5
t1
t2
0.04
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 5.26mH, RG = 25Ω, Peak IL = 37A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -37A di/dt ≤ 700A/µs VR ≤ 1000 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
0.133
0.0218
0.0731F
0.701F
20.065F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Power
(Watts)
180
140
120
100
TJ = +125°C
80
TJ = +25°C
60
TJ = -55°C
40
20
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
50
5.5V
40
30
20
5V
10
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
D
1.30
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON)vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 18.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ I = 18.5A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
ID, DRAIN CURRENT (AMPERES)
35
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
60
1.15
40
0.0
-50
6V
70
050-7035 Rev C
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
8V
80
7V
6.5
0
Case temperature
160
VGS =15 &10V
90
Junction
temp. ( ”C)
0.0244
APT10021JFLL
100
148
100µS
1mS
10
10mS
Crss
10
I
D
= 37A
12
VDS=200V
VDS=500V
8
VDS=800V
4
0
100
200
300
400
500
600
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
Coss
1,000
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
0
Ciss
10,000
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
APT10021JFLL
30,000
OPERATION HERE
LIMITED BY RDS (ON)
300
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
400
td(off)
V
= 667V
DD
R
70
G
= 5Ω
T = 125°C
J
60
V
DD
R
G
200
= 667V
tr and tf (ns)
td(on) and td(off) (ns)
300
= 5Ω
T = 125°C
J
L = 100µH
R
G
SWITCHING ENERGY (µJ)
4-2004
050-7035 Rev C
2500
= 667V
V
= 5Ω
I
T = 125°C
Eon
L = 100µH
EON includes
diode reverse recovery.
2000
1500
1000
Eoff
500
0
tr
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
12,000
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
SWITCHING ENERGY (µJ)
V
J
3000
30
0
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
DD
3500
40
10
td(on)
4000
tf
50
20
100
0
L = 100µH
DD
D
= 667V
= 37A
T = 125°C
J
Eoff
L = 100µH
E ON includes
8,000
diode reverse recovery.
6,000
4,000
Eon
2,000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT10021JFLL
90%
10%
Gate Voltage
Gate Voltage
td(off)
TJ125°C
td(on)
90%
tr
tf
Drain Current
90%
5%
10%
0
5%
Drain Voltage
10%
TJ125°C
Drain Voltage
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4-2004
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7035 Rev C
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)