BBY 56-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 1 • Very low capacitance spread VES05991 Type Marking Ordering Code Pin Configuration Package BBY 56-02W 6 Q62702- 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 10 V Forward current IF 20 mA Operating temperature range T op -55 ...+150 °C Storage temperature T stg -55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit Au 1998-11-01 -14-1998 BBY 56-02W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 1 nA IR - - 100 µA DC characteristics Reverse current VR = 8 V Reverse current VR = 8 V, TA = 65 °C AC characteristics Diode capacitance pF CT VR = 0.32 V, f = 1 MHz 59 - 67 VR = 1 V, f = 1 MHz 39 - 43 VR = 2 V, f = 1 MHz 22 - 27.2 VR = 2.38 V, f = 1 MHz 19.4 - 23.7 VR = 3 , f = 1 MHz 15.9 - 19 CT1/C T3 - 2.45 - - rs - 0.3 - Ω CC - 0.09 - pF Ls - 0.6 - nH Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 330 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -14-1998