ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS(on) trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFK 43N60 40N60 IXFN 43N60 IXFN 40N60 VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C 600 600 VGS VGSM Continuous Transient ±20 ±30 ID25 IDM IAR TC = 25°C T C = 25°C TC = 25°C EAR TC = 25°C 60 60 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W 5 5 V/ns PD TC = 25°C 560 600 43 172 43 600 600 V V ±20 ±30 40 160 40 TJ TJM Tstg 43 172 43 V V 40 160 40 W °C °C °C -55 ... +150 150 -55 ... +150 TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 300 2500 3000 0.9/6 N/A Weight VDSS VGH(th) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA IGSS VGS= ±20 VGE = 0 IDSS VDS= 0.8 • VDSS V VGS= 0 V RDS(on) VGS= 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 30 g Characteristic Values Min. Max. 600 2 4 V V ±200 nA TJ = 25 °C TJ = 125 °C 400 2 mA mA 43N60 40N60 0.13 0.15 W W IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V~ V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) °C N/A N/A N/A A A A G D D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features · International standard packages · Encapsulating epoxy meets UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance · Fast intrinsic Rectifier Applications · DC-DC converters · Synchronous rectification · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · Temperature and lighting controls · Low voltage relays Advantages · Easy to mount · Space savings · High power density 97503 A(7/97) 1-2 IXFK43N60 IXFK40N60 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDS = 10 V; ID = 0.5 • ID25, pulse test TBD TBD pF VGS = 0 V, VDS = 25 V, f = 1 MHz TBD pF C rss TBD pF td(on) TBD ns gfs C iss Coss VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 TBD ns td(off) R G = 1 Ω (External), TBD ns tf TBD ns Qg(on) TBD nC TBD nC TBD nC VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC TO-264 AA RthCK TO-264 AA RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B 0.22 0.15 K/W K/W 0.21 0.05 Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions K/W K/W Characteristic Values Min. Typ. Max. IS VGS = 0 43N60 40N60 43 40 A A ISM Repetitive; pulse width limited by TJM 43N60 40N60 172 160 A A VSD IF = 100 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr QRM IRM IF = 50 A, -di/dt = 100 A/µs, VR = 100 V TBD TBD TBD TO-264 AA Outline S tr Qgs ns µC A Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T RGS = 1 MΩ Pulse width limited by TJM. © 2000 IXYS All rights reserved Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Notes: 1. 2. IXFN43N60 IXFN40N60 Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2