PD - 95496
IRF1902PbF
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
VDSS
ID
85@VGS = 4.5V
170@VGS = 2.7V
4.0A
3.2A
20V
Description
These N-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
RDS(on) max (mW)
8
S
2
7
D
S
3
6
D
4
5
D
G
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
A
A
D
1
S
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
4.2
3.4
17
2.5
1.6
0.02
± 12
-55 to + 150
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJL
RθJA
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Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
1
8/10/04
IRF1902PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
20
–––
–––
–––
0.70
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.019
–––
–––
–––
–––
–––
–––
–––
–––
5.0
1.2
1.8
5.9
13
23
19
310
130
55
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
85
VGS = 4.5V, ID = 4.0A
mΩ
170
VGS = 2.7V, ID = 3.2A
–––
V
VDS = V GS, ID = 250µA
–––
S
VDS = 10V, ID = 4.0A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 70°C
100
VGS = 12V
nA
-100
VGS = -12V
7.5
ID = 4.2A
–––
nC
VDS = 10V
–––
VGS = 4.5V
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 53Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
4.2
17
–––
–––
–––
–––
38
42
1.2
57
63
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.5A, VGS = 0V
TJ = 25°C, I F = 2.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF1902PbF
100
100
VGS
7.0V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
VGS
7.0V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
2.25V
1
10
2.25V
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
2.0
T J = 25°C
T J = 175°C
VDS = 15V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
I D = 4.2A
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
100.00
1.00
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10.00
10
VDS, Drain-to-Source Voltage (V)
1.0
0.5
V GS = 4.5V
0.0
-60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
160
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF1902PbF
10000
6
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VDS = 16V
VDS = 10V
5
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
Coss = Cds + Cgd
1000
Ciss
Coss
100
Crss
I D = 4.0A
4
2
1
10
0
1
10
0
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
5
6
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
2
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
10.00
T J = 150°C
T J = 25°C
1.00
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.10
0.0
0.5
1.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1
QG, Total Gate Charge (nC)
1.5
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF1902PbF
5.0
RD
VDS
V GS
4.0
D.U.T.
ID , Drain Current (A)
RG
+
- VDD
3.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA)
100
D = 0.50
10
0.20
Thermal Response
0.10
0.05
P DM
0.02
1
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
2. Peak T
0.1
0.00001
0.0001
0.001
0.01
0.1
t1/ t 2
J = P DM x Z thJA
+TA
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.15
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance ( Ω)
IRF1902PbF
0.14
0.13
0.12
0.11
0.10
0.09
0.08
ID = 4.2A
0.07
0.06
0.05
0.04
2.0
4.0
6.0
8.0
3.000
2.500
2.000
VGS = 2.7V
1.500
1.000
0.500
VGS = 4.5V
0.000
0
5
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate
Voltage
10
15
20
ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
.2µF
.3µF
VGS
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF1902PbF
50
40
1.5
ID = 250µA
Power (W)
VGS(th) Gate threshold Voltage (V)
2.0
30
20
1.0
10
0
0.5
-75
-50
-25
0
25
50
75
100
125
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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150
1.00
10.00
100.00
1000.00
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF1902PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
5
6
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
0.25
.0098
0.10
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
8X b
0.25 [.010]
MAX
b
e1
6X
MILLIMETERS
MIN
A
E
INCHE S
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
8
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IRF1902PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
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9