CMOS LDO Regulator Series for Portable Equipments CMOS LDO Regulators with Auto Power Saving Function BH□□PB1WHFV Series No.09020EAT05 Description The BH□□PB1WHFV regulator series can respond to changes in output current by switching to a state in which regulator characteristics are ideal. The regulators cut power consumption by lowering their own current consumption to approximately 2 A when the application is operating in the standby state. During normal-current operation it will automatically switch to high-speed operating mode. The IC's soft start function reduce the rush current that flows to the output capacitors during startup. The HVSOF5 package, which features excellent heat dissipation, contributes to space-saving application designs. Features 1) Automatic switching between low-consumption and high-speed modes 2) Built-in rush current prevention circuit 3) Low-voltage 1.7 V operation 4) High accuracy output voltage: ± 1% 5) Circuit current during low-consumption operation: 2 A 6) Stable with a ceramic capacitor (0.47 F) 7) Built-in temperature and overcurrent protection circuits 8) Built-in output discharge during standby operation function 9) Ultra-small HVSOF5 power package Applications Battery-driven portable devices, etc. Product lineup 150 mA BH□□PB1WHFV Series Product name 1.2 1.5 BH□□PB1WHFV √ √ 1.8 2.5 2.8 2.9 3.0 3.1 3.3 Package √ √ √ √ √ √ √ HVSOF5 Model name: BH□□PB1W□ a b Symbol a b Description Output voltage specification □□ Output voltage (V) □□ Output voltage (V) 12 1.2 V (Typ.) 29 2.9 V (Typ.) 15 1.5 V (Typ.) 30 3.0 V (Typ.) 18 1.8 V (Typ.) 31 3.1 V (Typ.) 25 2.5 V (Typ.) 33 3.3 V (Typ.) 28 2.8 V (Typ.) Package HFV: HVSOF5 www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 1/9 2009.04 - Rev.A Technical Note BH□□PB1WHFV Series Absolute maximum ratings (Ta = 25°C) Parameter Symbol Power supply voltage Limits Unit VMAX −0.3 to +6.5 V Pd 410 *1 mW Power dissipation Operating temperature range Topr −40 to +85 °C Storage temperature range Tslg −55 to +125 °C Tjmax 125 °C Junction temperature *1: Reduced by 4.1 mW/°C over 25°C, when mounted on a glass epoxy board (70 mm 70 mm 1.6 mm) Recommended operating ranges (not to exceed Pd) Parameter Symbol Limits Power supply voltage Output MAX current Unit VIN 1.7 to 5.5 V IMAX 0 to 150 mA Recommended operating conditions Parameter Symbol Input capacitor Output capacitor CIN CO Min. Typ. Max. Unit Conditions 0.33 *2 0.47 − F The use of ceramic capacitors is recommended. 0.33 *2 0.47 − F The use of ceramic capacitors is recommended. *2: Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic. And also make sure that the capacitor value can not change as time progresses. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 2/9 2009.04 - Rev.A Technical Note BH□□PB1WHFV Series Electrical characteristics (Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, SEL = 0 V, CIN = 0.47 F, CO = 0.47 F) Limit PARAMETER Symbol Unit Conditions MIN. TYP. MAX. 【Regulator】 Output voltage (high-speed mode) VOUT1 Output voltage (low-consumption mode) VOUT2 VOUT1×0.99 - VOUT1×1.01 V VOUT≧2.5V,IOUT=0.1mA,SEL=1.5V VOUT1-0.025 - VOUT1+0.025 V VOUT≦1.8V,IOUT=0.1mA,SEL=1.5V VOUT2×0.97 - VOUT2×1.038 V VOUT≧2.5V,IOUT=0.1mA,SEL=0V VOUT2×0.967 - VOUT2×1.043 V VOUT≦1.8V,IOUT=0.1mA,SEL=0V ICC1 - 20 40 μA IOUT=0mA, VIN pin monitor,SEL=1.5V ICC2 - 2 4 μA IOUT=0mA, VIN pin monitor, SEL=0V ISTBY - - 1.0 Circuit current (high-speed mode) Circuit current (low-consumption mode) Circuit current (STBY) Ripple rejection ratio (high-speed mode) Dropout voltage 1 *1 RR1 42 60 - VSAT1 - 100 200 μA STBY=0V VRR=-20dBv, fRR=1kHz, dB IOUT=10mA, SEL=1.5V mV VIN=VOUT×0.98,IOUT=50mA Dropout voltage 2 *1 VSAT2 - 210 400 mV VIN=VOUT×0.98,IOUT=100mA Dropout voltage 3 *1 Line regulation 1 (high-speed mode) Line regulation 2 (low-consumption mode) Load regulation VSAT3 - 315 600 mV VIN=VOUT×0.98,IOUT=150mA VDL1 - 2 20 mV VIN=VOUT+1V to 5.5V,IOUT=10mA VDL2 - 2 20 mV VIN=VOUT+1V to 5.5V,IOUT=100μA VDLO - 10 40 mV IOUT=10mA to 100mA ITH1 0.09 0.3 - mA SEL=0V IOUT=3mA⇒0mA sweep ITH2 - 1.2 2.2 mA SEL=0V IOUT=0mA⇒3mA sweep Limit Current ILMAX 160 300 500 mA Vo=VOUT×0.90 Short current ISHORT 20 50 100 mA Vo=0V ISTB - 2 4 【Mode switch】 Current threshold (low-consumption mode) Current threshold (high-speed mode) 【Over Current Protection 1】 【Stand-by block】 STBY pin sink current STBY control voltage μA STBY=1.5V ON VSTBH 1.5 - VIN V OFF VSTBL -0.3 - 0.3 V RDCG 1.5 2.2 3.0 kΩ STBY=0V RSEL 0.5 1.0 2.0 MΩ Discharge resistance at standby 【SEL PIN】 Pull-down resistance of SEL pin SEL control voltage ON VSELH 1.5 - VIN V Fixed high speed mode OFF VSELL -0.3 - 0.3 V Automatic switch mode * Note: This IC is not designed to be radiation-resistant. *3: Except at VOUT ≤ 1.5 V. Electrical characteristics of each output voltage Output Voltage Parameter Min. 1.2 V 1.5 V Max. output current 1.8 V ≤ VOUT www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. Typ. Max. 70 120 − Unit VCC = 1.7 V Conditions 150 − − VCC = 2.0 V 50 100 − 150 − − 75 143 − VCC = VOUT + 0.3 V 150 − − VCC = VOUT + 0.6 V 3/9 mA VCC = 1.8 V VCC = 2.2 V 2009.04 - Rev.A Technical Note BH□□PB1WHFV Series 4.0 4.0 3.5 3.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Out put Volt age VOUT [V] 4.0 Output Volt age VOUT [V] 3.0 2.5 2.0 1.5 1.0 0.5 IO = 10 mA 0.0 1 2 3 4 I nput Voltage V IN [ V] 5 1.5 1.0 0.5 1 2 3 4 5 0 Input Volt age VIN [V] Fig. 2 Output Voltage vs Input Voltage (BH30PB1WHFV) IO = no load IO = no load Output Volt age VOUT [ V] 3.0 50 40 30 SEL = 1.5 V 20 10 2.5 2.0 1.5 SEL = 1.5 V 1.0 0.5 SEL = 0 V 0 SEL = 0 V 0.0 0 1 2 3 4 Input Voltage VIN [V] 5 0 300 3.0 2.5 2.0 1.5 1.0 Input Voltage 400 100 200 300 Output Current IOUT [mA] 2.0 1.5 1.0 0.5 0.0 300 2.0 1.5 1.0 0.0 400 0 400 Out put Current IOUT [mA] Fig. 10 Dropout voltage vs Output Current (BH18PB1WHFV) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 200 100 0 50 100 150 Out put Current IOUT [mA] Fig. 11 Dropout voltage vs Output Current (BH30PB1WHFV) 4/9 200 300 400 (BH30PB1WHFV) Output Current (BH33PB1WHFV) 300 0 100 Output Current I OUT [mA] Input Output Voltage difference VSAT [ mV] Input Output Voltage dif ference VOUT [mV] 2.5 15 0 0.5 400 3.0 10 0 2.5 Fig.8 Output Voltage vs Output Current (BH30PB1WHFV) 3.5 50 3.0 0 Fig. 7 Output Voltage vs Outout Current (BH12PB1WHFV) 200 SEL = 0 V 0 3.5 1.0 0.0 100 10 0 Fig.6 GND Current vs －Input Voltage (BH33PB1WHFV) 1.5 0.0 0 SEL = 1.5 V Output Current IOUT [mA] 2.0 0.5 5 20 0 0 2.5 0.5 4 IO = no load 400 Output Volt age VOUT [ V] 3.0 Output Voltage VOUT [ V] 3.5 3 30 0 (BH33PB1WHFV) 3.5 100 200 300 Output Current IOUT [mA] 200 2 Input Voltage VIN [V] 40 0 Output Current I OUT [mA] Fig.4 GND Current vs Input Voltage (BH12PB1WHFV) 0 100 1 Fig. 3 Output Voltage vs Input Voltage (BH33PB1WHFV) 3.5 60 IO = 10 mA 0.0 0 70 GND Current IGND [µA] 2.0 IO = 10 mA Fig. 1 Output Voltage vs Input Voltage (BH12PB1WHFV) Output Voltage VOUT [ V] 2.5 0.0 0 Output Voltage V OUT [V] 3.0 Input Output Voltage difference V SAT [mV] Output Volt age VOUT [V] Typical characteristics 400 300 200 100 0 0 50 100 150 Output Current I OUT [mA] Fig. 12 Dropout voltage vs Output Current (BH33PB1WHFV) 2009.04 - Rev.A Technical Note BH□□PB1WHFV Series 3.0 2.9 2.8 -50 -25 0 25 Temp[℃] 50 75 70 70 Ripple Rejection R.R.[dB] Ripple Rejection R.R.[dB] 80 30 Co = 0.47 F IO = 10 mA 20 100 1 10 k 100 k 1M 4 3 2 1 1.0 VSTBY[V] 1.5 0.0 2.0 2.0 3.0 VSTBY[V] 4.0 5.0 Fig. 15 Standby Pin Sink Current (BH30PB1WHFV) SEL SEL = 0 V 1.5 1 V / div 50 40 VOUT 30 Co = 0.47 F IO = 10 mA 10 100 1k 50 mV / div IO = no load 10 k 100 k 10 ms / div 1M Frequency f[Hz] Frequency f[Hz] Fig. 16 Ripple Rejection (BH12PB1WHFV) Fig. 18 Output Voltage Waveform During SEL Switching (BH30PB1WHFV) Fig. 17 Ripple Rejection (BH30PB1WHFV) IOUT = 1 mA 30 mA IOUT = 0 mA 10 mA 50 mV / div IOUT = 1 mA 100 100 mV / div 50 mV / div VOUT VOUT VOUT SEL = 0 V 100 s / div (power-saving operation) 1.0 60 20 1k 5 0 0.5 Fig. 14 Standby Pin Threshold (BH30PB1WHFV) 80 40 2 0.0 Fig. 13 Output Voltage vs Temperature (BH30PB1WHFV) 50 3 0 100 60 Standby Pin Sink Current ISTBY[µA] 3.1 10 6 4 Output Voltage VOUT[V] Output Voltage VOUT[V] 3.2 Fig. 19 Load Response (Co = 1.0 F) (BH30PB1WHFV) 200 s / div 200 s / div SEL = 1.5 V Fig. 20 Load Response (Co = 1.0 F) (BH30PB1WHFV) Fig. 21 Load Response (Co = 1.0 F) (BH30PB1WHFV) 100 m Rss = 10 k, IO = no load 1 V / div 1 V / div 1 V / div Co = 0.47 F 起動時間 Trise [sec] STBY VOUT Co = 2.2 F Co = 1 F Co = 0.47 F VOUT Co = 10 F 1 V / div 200 s / div Startup time Trise [sec] STBY 10 ms / div 10 m 1.0 m 1.0 0.01 0.1 1.0 Frequency f[Hz] Css (F) Slow start capacitance Fig. 22 Output Voltage Rise Time (BH30PB1WHFV) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. Fig. 23 Output Voltage Fall Time (BH30PB1WHFV) 5/9 Fig. 24 Soft Start Rise Time (BH30PB1WHFV) 2009.04 - Rev.A Technical Note BH□□PB1WHFV Series Block diagram, recommended circuit diagram, and pin assignment table BH□□PB1WHFV VIN PIN No. Symbol Function 1 STBY Output voltage on/off control(High: ON, Low: OFF) 2 GND Ground 3 VIN 4 VOUT 5 SEL Power supply input Voltage output Mode switching (High: Fix in high-speed mode Low: Automatic low-consumption mode switching) 3 CH1 + Cin THERMAL & OVER CURRENT PROTECTION VOLTAGE REFERENCE GND VOUT 4 2 Co + CH2 DISCHARGE SOFFT START Cin … 0.47 F Co … 0.47 F CURRENT STBY MONITOR Rss ( ) ( Css 1 ) CONTROL SEL 5 BLOCK Fig. 25 The IC incorporates a built-in auto power-saving function that continuously monitors the output current and switches automatically between a low current consumption regulator and a high-speed operation regulator. This function reduces the regulator's own current consumption to approximately 1/10 or lower of normal levels when the output current falls below approximately 300 A. To operate only the high-speed operation regulator without using the auto power-saving function, fix the SEL pin to high. GND current IGND [μ A] Auto Power-saving Function 30 Measurement conditions High-speed mode BH12PB1WHFV 20 VCC = 2.2 V 10 VSEL = open, VSTBY = 1.5 V Low-consumption mode 0 0 0.5 1 1.5 2 2.5 3 Output current IOUT [mA] Fig. 26 Auto Power-Saving Function (Example) Calculating the maximum internal IC power consumption (PMAX) 2. Power Dissipation/Heat Reduction (Pd) HVSOF5 0.6 *Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd. 410 mW 0.4 Pd[W] Power Dissipation (Pd) 1. Power Dissipation (Pd) Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption, and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. 0.2 0 0 25 50 75 100 125 Ta[℃] PMAX = (VIN - VOUT) IOUT (MAX.) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. VIN : Input voltage VOUT : Output voltage IOUT (MAX) : Max. output current 6/9 Fig. 27 HVSOF5 Power Dissipation vs Heat Reduction (Example) 2009.04 - Rev.A Technical Note BH□□PB1WHFV Series Input Output capacitors It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages. Typical ceramic capacitor characteristics 120 100 120 Capacitance rate of change (%) 80 60 10V rated voltage 40 16 V rated voltage 20 0 100 95 Capacitance rate of change (%) 50 V rated voltage 100 Capacitance rate of change (%) 50 V rated voltage 90 16 V rated voltage 85 10 V rated voltage 80 75 70 0 1 2 3 4 0 DC bias Vdc (V) 1 2 DC bias Vdc (V) 3 Y5V 60 40 20 0 -25 4 Fig. 29 Capacitance vs Bias (X5R, X7R) Fig. 28 Capacitance vs Bias (Y5V) X7R X5R 80 0 25 Temp[℃] 50 75 Fig. 30 Capacitance vs Temperature (X5R, X7R, Y5V) Output capacitors Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage supply source connected to the VCC. The higher value the output capacitor goes, the more stable the whole operation becomes. This leads to high load transient response. Please confirm the whole operation on actual application board. Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers. BH□□PB1WHFV 100 ESR (Ω) 10 Stable region 1 COUT = 0.47 F Ta = +25°C 0.1 0.01 0 50 100 150 Output Current Ｉｏ （mA) Fig. 31 Stable Operation Region (Example) Operation Notes 1. Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2. Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 3. Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. 4.Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. 5. Ground wiring patterns The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage on the power ground line may damage the device. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 7/9 2009.04 - Rev.A Technical Note BH□□PB1WHFV Series 6. Overcurrent protection circuit The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to temperatures. 7. Actions in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 8. Back Current In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this current by inserting a bypass diode between the VIN and VOUT pins. Back current VIN OUT STBY GND Fig. 32 Example Bypass Diode Connection 9. I/O voltage difference Using the IC in automatic switching mode when the I/O voltage differential becomes saturated (VIN - VOUT < 150 mV) may result in a large output noise level. If the noise level becomes problematic, use the IC with the SEL pin in the high state when the voltage differential is saturated. 10.GND Voltage The potential of GND pin must be minimum potential in all operating conditions. 11. Preventing Rush Current By attaching the Rss and Css time constants to the STBY pin, sudden rises in the regulator output voltage can be prevented, dampening the flow of rush current to the output capacitors. The larger the time constant used, the greater the resulting reduction. However, large time constants also result in longer startup times, so the constant should be selected after considering the conditions in which the IC is to be used. 100 Rss = 10 k 起動時間 Startup time Trise [sec] IO = no load 10 1.0 m 100 0.01 0.1 1.0 Slow start capacitance Frequency f[Hz] Css (F) Fig. 33 VOUT Startup Time vs CSS Capacitance (Reference) 12. Regarding input Pin of the IC (Fig.34) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. Resistor Transistor (NPN) Pin A Pin B C Pin B B E Pin A N P + N P P N + N Parasitic element P+ P substrate Parasitic element GND B N P P C + N E P substrate Parasitic element GND GND GND Parasitic element Other adjacent elements Fig.34 www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 8/9 2009.04 - Rev.A Technical Note BH□□PB1WHFV Series Ordering part number B H 3 Part No. 0 P Output voltage B 1 W Series PB1:Auto powersaving type H Shutdown switch W : Includes switch F V - Package HFV : HVSOF5 T R Packaging and forming specification TR: Embossed tape and reel HVSOF5 Embossed carrier tape 1.0±0.05 Quantity 3000pcs 4 (0.91) 4 5 (0.41) 5 0.2MAX Tape (0.3) (0.05) (0.8) Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 3 2 1 1 2 3 1pin 0.13±0.05 S +0.03 0.02 –0.02 1.6±0.05 0.6MAX 1.2±0.05 (MAX 1.28 include BURR) <Tape and Reel information> 1.6±0.05 0.1 S 0.5 0.22±0.05 0.08 Direction of feed M Reel (Unit : mm) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 9/9 ∗ Order quantity needs to be multiple of the minimum quantity. 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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