INCHANGE Semiconductor MBRD1045 Schottky Barrier Rectifier FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency rectifier of switching mode power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 45 V IF(AV) Average Rectified Forward Current 10 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 150 A Junction Temperature -65~175 ℃ Storage Temperature Range -65~175 ℃ TJ Tstg isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Schottky Barrier Rectifier MBRD1045 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 2.43 ℃/W ELECTRICAL CHARACTERISTICS SYMBOL VF IR PARAMETER Maximum Voltage Maximum Current Instantaneous Instantaneous CONDITIONS Forward Reverse isc website：www.iscsemi.com TYP MAX UNIT IF=10A ; Tj=125℃ 0.57 IF=20A ; Tj= 125℃ 0.72 IF=20A ; Tj= 25℃ 0.84 VR= VRWM;Tj= 25℃ 100 uA VR= VRWM;Tj= 125℃ 15 mA 2 V isc & iscsemi is registered trademark