Fairchild J105 N-channel switch Datasheet

J105
J106
J107
JFTJ105
G
D
G
G
TO-92
S D
SOT-223
S
N-Channel Switch
This device is designed for analog or digital switching applications where
very low On Resistance is mandatory. Sourced from Process 59.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Value
Units
VDG
Drain-Gate Voltage
Parameter
25
V
VGS
Gate-Source Voltage
- 25
V
IGF
Forward Gate Current
10
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconductor Corporation
Max
Units
J105 / J106 / J107
350
2.8
125
mW
mW/°C
°C/W
357
°C/W
J105 / J106 / J107 / JFTJ105
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
- 3.0
- 200
- 10
- 6.0
- 4.5
nA
nA
V
V
V
3.0
6.0
8.0
mA
mA
mA
Ω
Ω
Ω
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
I G = - 10 µA, VDS = 0
IGSS
Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
VGS = - 15 V, VDS = 0
VGS = - 15 V, VDS = 0, TA = 100°C
VDS = 15 V, ID = 10 nA
J105
J106
J107
- 25
- 4.5
- 2.0
- 0.5
V
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, IGS = 0
rDS(on)
Drain-Source On Resistance
VDS ≤ 0.1 V, VGS = 0
500
200
100
J105
J106
J107
J105
J106
J107
SMALL SIGNAL CHARACTERISTICS
Cdg(on)
Csg(on)
Cdg(off)
Drain Gate & Source Gate On
Capacitance
VDS = 0, VGS = 10 V, f = 1.0 MHz
160
pF
Drain-Gate Off Capacitance
VDS = 0, VGS = 10 V, f = 1.0 MHz
35
pF
Csg(off)
Source-Gate Off Capacitance
VDS = 0, VGS = 10 V, f = 1.0 MHz
35
pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Common Drain-Source
Characteristics
Common Drain-Source
Characteristics
50
V
150
=0 V
GS
-1V
-2V
100
-3V
50
-4V
-5V
0
ID - DRAIN CURRENT (mA)
ID - DRAIN CURRENT (mA)
200
T
0
A
= + 25 C
TYP V
= -5V
GS(OFF)
V
40
0.5
1
1.5
VDS - DRAIN-SOURCE VOLTAGE(V)
2
T
- 0.1V
0
A
= + 25 C
TYP V
= -0.7V
GS(OFF)
30
- 0.2V
20
- 0.3V
-0.4V
10
- 0.5V
0
0
=0V
GS
0
1
2
3
4
VDS - DRAIN-SOURCE VOLTAGE(V)
5
J105 / J106
J106 //J107
J107/ /NDSJ105
JFTJ105
N-Channel Switch
(continued)
Typical Characteristics
(continued)
DS
I
DSS
500
20
200
10
100
5
r
50
DS
2
20
20
(V
C
rs
( V DS = 0 V )
DS
= 5V)
1
0
-5
-10
-15
V GS - GATE-SOURCE VOLTAGE (V)
-20
On Resistance vs
Drain Current
20
r DS - DRAIN "ON" RESISTANCE (
)
--- NORMALIZED RESISTANCE
is
5
10
10
0.2 0.3 0.5
1
2 3
5
V GS - GATE CUT OFF VOLTAGE (V)
C
10
Normalized Drain Resistance
vs Bias Voltage
V GS(OFF) @5V, 10uA
10
r
DSb
5
rDS
= --------------V GS
1 - ---------V
GS(OFF)
1
0.5
0
0.2
0.4
0.6
0.8
1
V GS / VGS(OFF)-- NORMALIZED GATE TO SOURCE VOLTAGE (V)
- TRANSCONDUCTANCE (u mhos)
Output Conductance vs
Drain Current
V DG = 5.0V
5.0V
V
20
15V
20V
GS(OFF)
-4.0V
10
10V
10V
15V
20V
5.0V
10V
15V
20V
-2.0V
5
T A = +25
0
C
-1.0V
1
0.1
fs
f = 1.0 K Hz
0.2 0.3 0.5
1
2
3
I D - DRAIN CURRENT (mA)
5
10
g
os -
OUTPUT CONDUCTANCE (u mhos)
r DSb
1,000
V
@ VDS = 5.0V, ID =3nA
GS(OFF)
50
f=0.1-1.0MHz
@ VDS=100MV, VGS = 0
Cis (Crs) - CAPACITANCE (pf)
r
100
1
0.1
g
Capacitance vs Voltage
2,000
I D- DRAIN CURRENT (mA)
rDS - DRAIN "ON" RESISTANCE (
Ω)
Parameter Interactions
200
V
V
20
GS
= 0
= - 3.0V
GS(OFF)
0
10
+125 C
0
+125 C
5
0
+25 C
0
+25 C
0
- 55 C
V
1
1
2
= - 5.0V
GS(OFF)
3
5
10
20 30
I D - DRAIN CURRENT (mA)
50
100
5
10
Transconductance vs
Drain Current
0
T = - 55 C
A
T A= +25 0 C
0
TA = +125 C
V DG = 10.0V
T
A
= +25
0
C
f = 1.0 k Hz
20
10
V
= - 1.0V
GS(OFF)
5
V
= - 3.0V
GS(OFF)
V
= - 5.0V
GS(OFF)
1
0.1
0.2 0.3 0.5
1
2
3
I D - DRAIN CURRENT (mA)
J105 / J106 / J107 / JFTJ105
N-Channel Switch
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
en - NOISE VOLTAGE (nV/
PD - POWER DISSIPATION (mW)
20
V DG = 10 V
Hz
)
Noise Voltage vs
Frequency
15
BW = 6.0 Hz @ f = 10Hz, 100 Hz
= 0.2f @ f > 1.0 k Hz
10
I = 1 mA
D
5
ID = 10 mA
0
0.01
0.03
0.1
0.3
1
3
10
f - FREQUENCY (k Hz)
30
100
350
300
TO-92
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE ( oC)
125
150
J105 / J106 / J107 / JFTJ105
N-Channel Switch
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