CYSTEKEC MTD9D0P03J3 P-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C053J3
Issued Date : 2017.09.01
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTD9D0P03J3
BVDSS
ID @VGS=-10V, TC=25°C
ID @VGS=-10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-20A
RDS(ON)@VGS=-6V, ID=-15A
RDS(ON)@VGS=-5V, ID=-15A
-30V
-45.5A
-10A
7.8mΩ(typ)
11 mΩ(typ)
14.4 mΩ(typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTD9D0P03J3
TO-252(DPAK)
G:Gate
D:Drain
S:Source
G
D S
Ordering Information
Device
MTD9D0P03J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD9D0P03J3
CYStek Product Specification
Spec. No. : C053J3
Issued Date : 2017.09.01
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C
Continuous Drain Current @VGS=-10V, TC=100°C
Continuous Drain Current @VGS=-10V, TA=25°C
Continuous Drain Current @VGS=-10V, TA=100°C
Pulsed Drain Current
Single Pulse Avalanche Current @ L=0.1mH
Single Pulse Avalanche Energy @ L=1mH, IAS=-16A, VDD=-15V
TC=25℃
TC=100℃
Power Dissipation
TA=25℃
TA=100℃
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Limits
Unit
-30
±20
-45.5
-28.8
-10
-6.3
-182 *1
-36
128 *2
50 *4
20 *4
2.5
1.0
-55~+150
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
2.5
50 *3
Unit
°C/W
Note : *1. Pulse width limited by safe operating area.
*2 . 100% tested by conditions of VDD=-15V, L=0.1mH, VGS=-10V, IAS=-10A.
*3 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with
TA=25°C. The value in any given application depends on the user’s specific board design.
*4 . The power dissipation PD is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It
is used to determined the current rating, when this rating falls below the package limit.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
MTD9D0P03J3
Min.
Typ.
Max.
-30
-1.5
-
16.6
7.8
11
14.4
-3
±100
-1
-25
10
17
23
Unit
V
S
nA
μA
mΩ
Test Conditions
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-10V, ID=-20A
VGS=±20V, VDS=0V
VDS =-24V, VGS =0V
VDS =-24V, VGS =0V, Tj=70°C
VGS =-10V, ID=-20A
VGS =-6V, ID=-15A
VGS =-5V, ID=-15A
CYStek Product Specification
CYStech Electronics Corp.
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
* IS
*ISM
*VSD
*trr
*Qrr
-
44.7
9
12.4
16.4
20.6
64.8
22.4
2309
307
240
-
-0.74
15
8.8
-45.5
-182
-1
-
Spec. No. : C053J3
Issued Date : 2017.09.01
Revised Date :
Page No. : 3/9
nC
ID=-20A, VDS=-20V, VGS=-10V
ns
VDS=-20V, VGS=-10V, RG=3Ω, ID=-20A
pF
VGS=0V, VDS=-15V, f=1MHz
A
V
ns
nC
IS=-1A, VGS=0V
IF=-20A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTD9D0P03J3
CYStek Product Specification
Spec. No. : C053J3
Issued Date : 2017.09.01
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V, 7V, 6V
90
-I D, Drain Current(A)
-BVDSS, Normalized Drain-Source
Breakdown Voltage
100
5V
80
70
60
4.5V
50
40
30
4V
20
10
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
-VGS=3.5V
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
70
-VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State
Resistance(mΩ)
80
60
50
VGS=-5V
-6V
-10V
40
30
20
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.2
0
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
4
6
8
-IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
2.4
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
2
90
80
70
60
ID=-20A
50
40
ID=-15A
30
20
2
VGS=-10V, ID=-20A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 7.8mΩ typ
10
0
0
0
MTD9D0P03J3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053J3
Issued Date : 2017.09.01
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
f=1MHz
Crss
1.4
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
0.4
100
0
5
10
15
20
25
-VDS, Drain-Source Voltage(V)
-75 -50 -25
30
Gate Charge Characteristics
Maximum Safe Operating Area
10
1000
100
RDS(ON)
Limited
-VGS, Gate-Source Voltage(V)
100μs
-I D, Drain Current (A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1ms
10ms
100ms
10
1s
1
TC=25°C, Tj=150°C,
VGS=-10V, RθJC=2.5°C/W,
single pulse
DC
8
6
4
VDS=-20V
2
ID=-20A
0
0.1
0.1
1
10
-VDS, Drain-Source Voltage(V)
0
100
6
Maximum Drain Current vs Case Temperature
12
18
24
30
36
Qg, Total Gate Charge(nC)
42
48
Typical Transfer Characteristics
100
60
-I D, Drain Current(A)
-I D, Maximum Drain Current(A)
VDS=-10V
50
40
30
20
60
40
20
VGS=-10V, Tj(max)=150°C,
RθJC=2.5°C/W, single pulse
10
80
0
0
25
MTD9D0P03J3
50
75
100 125
150
TC , Case Temperature(°C)
175
200
0
1
2
3
4
5
6
7
8
-VGS, Gate-Source Voltage(V)
9
10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053J3
Issued Date : 2017.09.01
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Single Pulse Maximum Power Dissipation
GFS , Forward Transfer Admittance(S)
100
5000
4500
Peak Transient Power (W)
VDS=-5V
10
1
VDS=-10V
0.1
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
TJ(MAX) =150°C
TC=25°C
RθJC=2.5°C/W
4000
3500
3000
2500
2000
1500
1000
500
100
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5 ° C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTD9D0P03J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053J3
Issued Date : 2017.09.01
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTD9D0P03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053J3
Issued Date : 2017.09.01
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD9D0P03J3
CYStek Product Specification
Spec. No. : C053J3
Issued Date : 2017.09.01
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
D9D0
P03
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTD9D0P03J3
CYStek Product Specification
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