Sony DM-231 Magnetoresistance element Datasheet

DM-231
Magnetoresistance Element
For the availability of this product, please contact the sales office.
Description
DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material
deposited by evaporation on a silicon substrate. It is
suitable for angle of rotation detection.
M-118
(Plastic)
Features
• Low magnetic field and high sensitivity: bridge type
stands for large output voltage
150 mVp-p (Min.) at VCC=5 V, H=14400 A/m
• Fitted with bias magnet: stable output.
• High reliability: Achieved through silicon nitride
protective film.
Structure
Ferromagnetic thin film circuit (With ferrite magnet)
Applications
• Non-contact angle of rotation detection.
• Contactless potentiometer.
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage
VCC
10
–30 to +100
V
°C
Recommended Operating Conditions
• Supply voltage
VCC
5
• Operating temperature Topr
–20 to + 75
V
°C
• Storage temperature
Tstg
Electrical Characteristics
Item
Output voltage
Midpoint potential
Midpoint potential
difference/Output voltage
Total resistance
Ta=25 °C
Symbol
VO
VA, VB
|VA-VB|
VO
RT
Condition
VCC=5 V , H=14400 A/m (Peak)
AC magnetic field θ =0 °
VCC=5 V , H=0 A/m
Min.
Typ.
150
2.475
500
Unit
mVp-p
VCC=5 V , H=0 A/m
H=14400 A/m (Peak)
AC magnetic field θ =0 °
Max.
650
2.525
V
15
%
800
Ω
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E88Z12C5X-TE
DM-231
Equivalent Circuit
1
VCC
RD
RA
2
VA
4
VB
RC
RB
3
GND
Basic Performance
1) Operation principle
External magnetic field H
1
AAAAAA
A
AAAAAAAA
AA
A
RA
RD
RB
RC
2
Synthetic
magnetic field (a)
Various resistances change according to the direction of
the combnied bias and external magnetic field.
¡) When the direction of the synthetic magnetic field is (a),
RA,RC : Maximum resistance
RB,RD : Minimum resistance
¡¡) When the direction of the synthetic magnetic field is (b),
4
RA,RC : Minimum resistance
RB,RD : Maximum resistance
3
Bias magnetic field
H=14400A/m
External magnetic field H
Synthetic magnetic field (b)
∗ Device internal structure
(Back of mark face)
Bias magnetic field
3
2
4
1
2) Power supply pin and output pin
2
231
3) Sensitivity direction
Non-Sensitive
3
4
1
VCC
1
2
4
3
Sensitive
Out put
Differential amplifier
GND
The ferromagnetic magnetoresistance element differs
from the semiconductor magnetoresistance element and
hole element in that it responds only to the magnetic
field within the element's surface. It is not sensitive to
the magnetic field perpendicular to the element.
—2—
DM-231
Basic Application
Rotation angular detection
S
2
N
1
3
Out put
Differential amplifier
4
Out put
H=14400A/m
–90°
0°
Handling precautions
1) Most suitable magnetic
field intensity
When the external magnetic
field is at H=14400A/m,
rotation angle can be
detected most effectively.
231
H
Magnetic field
angle θ
90°
θ
Magnetic field angle θ
Out put
H
H>14400A/m
H=14400A/m
H<14400A/m
θ
231
–90°
0°
90°
Magnetic field
angle θ
Whe the external magnetic field H<14400A/m, output voltage shrinks.
When the external magnetic field H>14400A/m, the detection angle range shrinks.
Whe the external magnetic field H<14400A/m, the detection angle range becomes larger. In regions other
than -90° to +90°, the magnetic field combined with the bias magnetic field, shrinks down, which is not
advisable. Also, when the range to be detected is smaller than -90° to +90° it is more advantageous to turn to
H>14400A/m.
2) External magnetic field direction
With regards to the bias magnetic field, usage at other than ±90° should be avoided. That causes a decrease
in the combined magnetic field intensity, that is not recommended.
H
H
231
231
1
1
H
—3—
H
DM-231
Midpoint potential vs. Magnetic field Intensi ty (1)
2.54
Midpoint potential vs. Magnetic field Intensity (2)
AAAA
AAAA
AAAA
AAAA
AAAA
2.54
H
2.52
GND
231
VA-Midpoint potential (V)
VCC=5V
2.50
H
2.48
VA
VCC
2.46
4000
0
8000
GND
231
12000
AAAA
AAAA
AAAA
AAAA
AAAA
H
VB-Midpoint potential (V)
VA
VCC
VCC
2.52
GND
VB
VCC=5V
2.50
H
2.48
VCC
2.46
16000
231
0
H-Magnetic field intensity (Oe)
4000
8000
12000
231
GND
VB
16000
H-Magnetic field intensity (Oe)
Midpoint potential vs. Magnetic field direction
Output voltage vs. Magnetic field intensity
200
VA
2.52
θ H
VA
2.50
231
VCC
VCC=5V
H=14400A/m
2.48
GND
VB
Vo-Output voltage (mVp-p)
VA, VB-Midpoint potential (V)
2.54
150
100
H
VA
VCC
50
VB
231
H: Peak intensity of AC magnetic field
VCC=5V
2.46
–90
0
–45
45
90
0
θ-Magnetic field direction (deg)
Temperature characteristics
200
700
150
600
VO
100
500
H=14400A/m
AC Magnetic field
VCC=5V
50
—20
0
20
40
60
RT -Total resistance (Ω)
Vo-Output voltage (mVp-p)
800
RT
400
80
Ta-Ambient temperature (°C)
—4—
GND
VB
4000
8000
12000
16000
H-Magnetic field intensity (Oe)
DM-231
Unit : mm
0.4
0.15
2.54
SONY CODE
0.25
2.5 MAX
M-118
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
—5—
0.2g
22.0 ± 0.3
+ 0.4
4.5 – 0.1
M-118
4.5 ± 0.1
Package Outline
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