Photodiode-Chip EPC-470-0.9 Preliminary 11.04.2007 rev. 02/06 Wavelength range Type Technology Electrodes Blue, selective Integrated filter GaP P (anode) up 860 typ. dimensions (µm) 800 720 typ. thickness 300 (± 40) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm Description Narrow bandwidth and high spectral sensitivity in blue-green range (425…525 nm), low cost chip Applications Fluorescence detection, measurement systems, color sensors PD-03 Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit A 0.62 mm² Active area Temperature coefficient of I Ph T = -40…120°C TC(IPh) 0.15 %/K Temperature coefficient of I D T = -40…120°C TC(ID) 1.05 1/K Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IR = 10 µA Reverse voltage3 Symbol Min VR 5 Dark current (Ee = 0 W/m²) VR = 5 V ID Central sensitivy wavelength V 5 30 pA 470 480 nm VR = 0 V λC Responsivity at λC1 VR = 0 V Sλ 0.18 A/W Responsivity at λC2 VR = 0 V Sλ 0.30 A/W Spectral range at 0.5 max. VR = 0 V λ0.5 425 525 nm Sensitivity range at 1% VR = 0 V λmin, λmax 380 570 nm Spectral bandwidth at 50% VR = 0 V ∆λ0,5 460 100 nm 1 Measured on bare chip on TO-18 header Measured on epoxy covered chip on TO-18 header 3 information only 2 Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPС-470-0.9 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip EPC-470-0.9 Preliminary 11.04.2007 rev. 02/06 Typical Optical Responsivity (A/W) 0,20 0,15 0,10 0,05 350 400 450 500 Wavelength [nm] 550 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 600 2 of 2