NDS9430 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). • –5.3 A, –30 V • Low gate charge Applications • Fast switching speed • Power management • High performance trench technology for extremely low RDS(ON) • Load switch • Battery protection RDS(ON) = 60 mΩ @ VGS = –10 V RDS(ON) =100 mΩ @ VGS = –4.5 V • High power and current handling capability DD DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±20 V ID Drain Current –5.3 A – Continuous (Note 1a) – Pulsed –20 Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1 Operating and Storage Junction Temperature Range W –55 to +175 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS9430 NDS9430 13’’ 12mm 2500 units 2002 Fairchild Semiconductor Corporation NDS9430 Rev B NDS9430 May 2002 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA –30 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSSF IGSSR Gate–Body Leakage, Forward Gate–Body Leakage, Reverse VGS = 20 V, VGS = –20 V VDS = 0 V VDS = 0 V 100 –100 nA nA –3 V On Characteristics ID = –250 µA, Referenced to 25°C –23 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 4.5 VGS = –10 V, ID = –5.3 A VGS = –4.5 V, ID = –2 A VGS= –10 V, ID = –5.3 A,TJ=125°C 42 65 57 –1 ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –5.3 A VDS = –15 V, f = 1.0 MHz V GS = 0 V, –1.7 mV/°C 60 100 73 –20 mΩ A 10 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time 528 pF 132 pF 70 pF (Note 2) VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 7 14 ns 13 24 ns ns td(off) Turn–Off Delay Time 14 25 tf Turn–Off Fall Time 9 17 ns Qg Total Gate Charge 10 14 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –15 V, VGS = –10 V ID = –4 A, 2.2 nC 2 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage (Note 2) –0.8 –2.1 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% NDS9430 Rev B NDS9430 Electrical Characteristics NDS9430 Typical Characteristics 2 30 VGS = -10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -6.0V -ID, DRAIN CURRENT (A) -5.0V -4.5V 20 -4.0V 10 -3.5V -3.0V 0 1.8 VGS=-4.0V 1.6 -4.0V -5.0V 1.4 -6.0V -7.0V 1.2 -8.0V 0.8 0 1 2 3 4 5 6 0 6 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) 24 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 1.6 ID = -5.3A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 18 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID = -2.8A 0.2 0.15 TA = 125oC 0.1 TA = 25oC 0.05 0 -50 -25 0 25 50 75 100 125 150 175 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 100 25oC TA = -55oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) -10V 1 12 125oC 9 6 3 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 VGS =0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDS9430 Rev B NDS9430 Typical Characteristics 800 ID = -5.3A VDS = -5V f = 1 MHz VGS = 0 V 700 -10V 8 -15V CAPACITANCE (pF) -VGS , GATE-SOURCE VOLTAGE (V) 10 6 4 2 600 CISS 500 400 300 COSS 200 100 CRSS 0 0 0 2 4 6 8 10 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 100µs -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) RDS(ON) LIMIT 1ms 10 10ms 100ms 1s 1 10s DC VGS = -10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.1 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA o RθJA = 125 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. NDS9430 Rev B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER â UHC SMART START UltraFET â SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5