APT10026JLL
1000V 30A 0.260Ω
POWER MOS 7
R
S
S
MOSFET
27
2
T-
D
G
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
SO
"UL Recognized"
ISOTOP ®
D
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
VDSS
ID
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10026JLL
UNIT
1000
Volts
Drain-Source Voltage
30
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
595
Watts
Linear Derating Factor
4.76
W/°C
PD
TJ,TSTG
120
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
30
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1000
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 15A)
TYP
MAX
Volts
0.260
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
12-2003
Characteristic / Test Conditions
050-7113 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10026JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1268
Reverse Transfer Capacitance
f = 1 MHz
224
VGS = 10V
267
VDD = 500V
34
C rss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 38A @ 25°C
tf
8
VDD = 500V
ID = 38A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
9
INDUCTIVE SWITCHING @ 25°C
6
1196
VDD = 667V, VGS = 15V
ID = 38A, RG = 3Ω
713
INDUCTIVE SWITCHING @ 125°C
6
ns
39
RG = 0.6Ω
Fall Time
nC
17
VGS = 15V
Turn-off Delay Time
pF
173
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
7114
VGS = 0V
3
MAX
µJ
2014
VDD = 667V, VGS = 15V
ID = 38A, RG = 3Ω
971
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
30
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -38A, dl S/dt = 100A/µs)
1182
ns
Q
Reverse Recovery Charge (IS = -38A, dl S/dt = 100A/µs)
31.9
µC
rr
dv/
dt
Peak Diode Recovery
dv/
120
(Body Diode)
1.3
(VGS = 0V, IS = - 38A)
dt
Amps
Volts
10
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.21
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 7.11mH, RG = 25Ω, Peak IL = 30A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID30A di/dt ≤ 700A/µs VR ≤ 1000V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.15
0.7
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7113 Rev A
12-2003
0.25
0.20
0.3
0
t1
t2
0.05
SINGLE PULSE
0.1
0.05
10-5
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
°C/W
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
APT10026JLL
90
15 &10V
RC MODEL
Junction
temp. (°C)
0.0492
Power
(watts)
0.142
0.0189
0.0273F
0.469F
44.2F
ID, DRAIN CURRENT (AMPERES)
80
Case temperature. (°C)
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
80
60
40
TJ = +25°C
20
TJ = +125°C
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
50
40
6V
30
20
5.5V
10
5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
V
NORMALIZED TO
= 10V @ I = 15A
GS
D
1.3
1.2
VGS=10V
1.1
1.0
VGS=20V
0.9
0.8
0
10
20
30
40
50
60
70
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
1.00
0.95
0.90
0.85
-50
= 15A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
V
1.10
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
1.1
1.0
0.9
12-2003
ID, DRAIN CURRENT (AMPERES)
30
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
6.5V
60
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7113 Rev A
ID, DRAIN CURRENT (AMPERES)
100
70
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
7.5V
7V
APT10026JLL
30,000
OPERATION HERE
LIMITED BY RDS (ON)
50
10,000
100µS
10
1mS
TC = +25°C
TJ = +150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
120
Crss
100
= 38A
VDS = 200V
12
VDS = 500V
8
VDS = 800V
4
0
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
Coss
1,000
10mS
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
Ciss
50
100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
100
TJ =+150°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
160
V
td(off)
140
G
J
DD
R
G
tf
= 667V
tr and tf (ns)
td(on) and td(off) (ns)
L = 100µH
V
= 3Ω
T = 125°C
J
L = 100µH
60
40
V
DD
R
G
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10000
= 667V
V
= 3Ω
I
T = 125°C
050-7113 Rev A
L = 100µH
EON includes
diode reverse recovery.
Eon
2000
1500
1000
Eoff
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
12-2003
J
2500
tr
0
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
3000
40
20
0
3500
60
td(on)
20
4000
= 3Ω
T = 125°C
80
80
= 667V
DD
R
120
100
TJ =+25°C
DD
D
= 667V
Eoff
= 38A
T = 125°C
J
8000
L = 100µH
E ON includes
diode reverse recovery.
6000
4000
Eon
2000
500
0
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT10026JLL
10%
90%
T = 125°C
J
td(off)
td(on)
90%
tr
5%
90%
10%
tf
5%
10%
Switching Energy
Switching Energy
0
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
12-2003
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7113 Rev A
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)