NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features • • • • • www.onsemi.com Low RDS(on) High Current Capability 100% Avalanche Tested NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant V(BR)DSS ID MAX (Note 1) RDS(ON) MAX 100 V 76 A 13 mW @ 10 V N−Channel D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Symbol Value Unit Drain−to−Source Voltage Parameter VDSS 100 V Gate−to−Source Voltage − Continuous VGS $20 V ID 76 A Continuous Drain Current RqJC Steady State Power Dissipation RqJC Steady State TC = 25°C TC = 100°C 4 188 W IDM 305 A TJ, Tstg −55 to +175 °C IS 76 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 57.7 A, L = 0.3 mH, RG = 25 W) EAS 500 mJ Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) S 54 PD Pulsed Drain Current TC = 25°C G 4 1 3 1 2 Junction−to−Case (Drain) Steady State Junction−to−Ambient (Note 1) Symbol Max Unit RqJC 0.8 °C/W RqJA 3 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain NTB 6410ANG AYWW NTP 6410ANG AYWW 32 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). D2PAK CASE 418B STYLE 2 TO−220AB CASE 221A STYLE 5 4 Drain THERMAL RESISTANCE RATINGS Parameter 2 1 Gate 3 Source 2 Drain 1 Gate 2 Drain 3 Source 6410AN = Specific Device Code G = Pb−Free Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 2 1 Publication Order Number: NTB6410AN/D NTB6410AN, NTP6410AN, NVB6410AN ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 100 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V(BR)DSS/TJ IDSS V 94 VGS = 0 V, VDS = 100 V mV/°C TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = $20 V VGS(th) VGS = VDS, ID = 250 mA $100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(th)/TJ 4.0 9.0 RDS(on) Forward Transconductance 2.0 gFS V mV/°C VGS = 10 V, ID = 76 A 11 13 mW VGS = 10 V, ID = 20 A 10 12 VDS = 5 V, ID = 20 A 40 S 4500 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 250 Total Gate Charge QG(TOT) 120 Threshold Gate Charge QG(TH) VDS = 25 V, VGS = 0 V, f = 1 MHz 650 nC 5.2 VGS = 10 V, VDS = 80 V, ID = 76 A Gate−to−Source Charge QGS 20 Gate−to−Drain Charge QGD 57 Plateau Voltage VGP 5.1 V Gate Resistance RG 2.4 W 17 ns SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 10 V, VDD = 80 V, ID = 76 A, RG = 6.2 W tf 170 120 190 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time Reverse Recovery Charge IS = 76 A TJ = 25°C 1.0 TJ = 125°C 0.9 93 VGS = 0 V, IS = 76 A, dISD/dt = 100 A/ms tb QRR www.onsemi.com 2 V ns 69 24 300 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.3 nC NTB6410AN, NTP6410AN, NVB6410AN 160 160 TJ = 25°C 10 V 120 6.0 V 100 80 60 5.4 V 40 5.0 V VGS = 4.4 V 0 0 1 2 3 4 100 80 60 TJ = 25°C TJ = 125°C 40 TJ = −55°C 0 5 2 3 4 5 6 7 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 76 A TJ = 25°C 0.035 0.025 0.015 5 6 7 8 9 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 120 20 20 0.005 VDS w 10 V 140 6.5 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 140 7.0 V 0.030 VGS = 10 V TJ = 175°C 0.025 TJ = 125°C 0.020 0.015 TJ = 25°C 0.010 TJ = −55°C 0.005 0.000 10 20 30 40 50 60 70 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Region versus Gate Voltage Figure 4. On−Region versus Drain Current and Gate Voltage 80 VGS = 0 V VGS = 10 V ID = 76 A IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 100000 2.5 2 1.5 1 0.5 −50 TJ = 150°C 10000 TJ = 125°C 1000 100 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERTURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drian−to−Source Leakage Current versus Voltage www.onsemi.com 3 10 TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 7000 6000 5000 Ciss 4000 3000 2000 1000 Coss Crss 0 0 10 20 30 40 50 60 70 80 90 10 100 QT 8 VDS 60 4 40 2 VDS = 80 V ID = 76 A TJ = 25°C 0 100 0 20 40 60 80 100 20 0 120 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 80 tf tr IS, SOURCE CURRENT (A) t, TIME (ns) 100 Qgd Qgs 6 Figure 7. Capacitance Variation VDS = 80 V ID = 76 A VGS = 10 V 80 VGS VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 8000 VGS, GATE−TO−SOURCE VOLTAGE (V) NTB6410AN, NTP6410AN, NVB6410AN td(on) td(off) 10 TJ = 25°C VGS = 0 V 70 60 50 40 30 20 10 1 1 10 100 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 1.1 500 1000 10 ms 100 100 ms 1 ms 10 10 ms dc 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT VGS = 10 V SINGLE PULSE TC = 25°C AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) ID = 57.7 A 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 400 300 200 100 0 25 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature Figure 11. Maximum Rated Forward Biased Safe Opeating Area www.onsemi.com 4 NTB6410AN, NTP6410AN, NVB6410AN 1 D = 0.5 R(t) (°C/W) 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) 1.0 10 100 1000 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTB6410ANG D2PAK (Pb−Free) 50 Units / Rail NTB6410ANT4G D2PAK (Pb−Free) 800 / Tape & Reel NTP6410ANG TO−220 (Pb−Free) 50 Units / Rail NVB6410ANT4G D2PAK (Pb−Free) 800 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTB6410AN, NTP6410AN, NVB6410AN PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE H M T B M N R M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTB6410AN, NTP6410AN, NVB6410AN PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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