Anachip AF8510CS N and p-channel enhancement mode power mosfet Datasheet

AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ Features
„ General Description
- Lower On-Resistance
- Simple Drive Requirement
- Fast Switching Performance
- Pb Free Plating Product
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
costeffectiveness.
„ Product Summary
CH
BVDSS (V)
RDS(ON) (mΩ)
ID (A)
N
P
30
-30
28
55
6.9
-5.3
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applicat ions such as DC/DC
converters.
„ Pin Descriptions
„ Pin Assignments
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Pin Name
Description
S1
G1
D1
S2
G2
D2
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
SO-8
„ Ordering information
Feature
F :MOSFET
A X
8510C X X
PN
Package
Packing
S: SOP-8
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Nov 14, 2005
1/8
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
Parameter
N-Channel P-Channel
30
-30
±20
±20
TA=25ºC
6.9
-5.3
Continuous Drain Current (Note 1)
5.5
-4.2
TA=70ºC
Pulsed Drain Current (Note 2)
30
-30
Total Power Dissipation
TA=25ºC
2.0
Linear Deratomg Factor
0.016
Operating Junction and Storage Temperature Range
-55 to 150
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
A
W
W/ ºC
ºC
„ Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient (Note 1)
Maximum
62.5
Max.
Units
ºC/W
„ N-CH Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance (Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
Drain-Source Leakage Current
(TJ=70oC)
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS / TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Min.
Typ.
Max.
Units
30
-
-
V
-
0.02
-
V/ C
1
-
4.6
28
40
3
-
VDS=30V, VGS=0V
-
-
1
VDS=24V, VGS=0V
-
-
25
VGS=±20V
ID=6.9A,
VDS=24V,
VGS=4.5V
VDS=15V,
ID=1A,
RG=3.3Ω, VGS=10V
RD=15Ω
VGS=0V,
VDS=25V,
f=1.0MHz
-
10
2
6
8
7
20
6
540
160
120
±100
16
870
-
Test Conditions
IS=1.7A, VGS=0V
IS=6.9A, VGS=0V
dl/dt=100A/µs
Min.
-
Typ.
20
11
Max.
1.2
-
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
VGS=10V, ID=5A
VGS=4.5V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
o
mΩ
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
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Rev. 1.0
2/8
Unit
V
ns
nC
Nov 14, 2005
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ P-CH Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
BVDSS
BVDSS /
TJ
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Reference to 25oC,
ID=1mA
Coefficient
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-5A
Drain-Source Leakage Current
VDS=-30V, VGS=0V
(TJ=25oC)
Drain-Source Leakage Current
VDS=-24V, VGS=0V
(TJ=70oC)
Gate-Source Leakage
VGS=±20V
Total Gate Charge (Note 3)
ID=-5.3A,
VDS=-24V,
Gate-Source Charge
VGS=-4.5V
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
VDS=-15V,
ID=1A,
Rise Time
RG=3.3Ω, VGS=-10V
Turn-Off Delay Time
RD=15Ω
Fall-Time
Input Capacitance
VGS=0V,
VDS=25V,
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
-30
-
-
V
-
-0.023
-
V/oC
1
-
4.9
55
90
-3
-
-
-
-1
-
-
-25
-
9
2
6
10
8
25
13
580
180
120
±100
15
930
-
Min.
-
Typ.
21
17
Max.
-1.2
-
mΩ
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage (Note 3)
Reverse Recovery Time)
Reverse Recovery Charge
2
Test Conditions
IS=1.7A, VGS=0V
IS=-5.3A, VGS=0V,
dl/dt=100A/µs
o
Unit
V
ns
nC
Note 1: Surface mounted on 1 in copper pad of FR4 board; 135 C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
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Rev. 1.0
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Nov 14, 2005
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ Typical Performance Characteristics (N-Channel)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction
Temperature
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Rev. 1.0
4/8
Nov 14, 2005
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ Typical Performance Characteristics (N-Channel) (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operation Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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Rev. 1.0
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Nov 14, 2005
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ Typical Performance Characteristics (P-Channel) (Continued)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction
Temperature
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Rev. 1.0
6/8
Nov 14, 2005
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ Typical Performance Characteristics (P-Channel) (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operation Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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Rev. 1.0
7/8
Nov 14, 2005
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ Marking Information
SO-8L
( Top View )
8
Logo
Part Number
8510C
AA Y W
Week code:
"A~Z": 01~26;
"A~Z": 27~52
Year code:
"4" =2004
1
~
Factory code
„ Package Information
H
E
Package Type: SO-8L
L
VIE W "A "
D
0.0 15x45
7
(4X
)
e
B
A1
C
A
(4X
)
A2
7
VI EW "A"
y
Symbol
A
A1
A2
B
C
D
E
e
H
L
y
Dimensions In Millimeters
Min.
Nom.
Max.
1.40
1.60
1.75
0.10
0.25
1.30
1.45
1.50
0.33
0.41
0.51
0.19
0.20
0.25
4.80
5.05
5.30
3.70
3.90
4.10
1.27
5.79
5.99
6.20
0.38
0.71
1.27
0.10
0O
8O
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Dimensions In Inches
Min.
Nom.
Max.
0.055
0.063
0.069
0.040
0.100
0.051
0.057
0.059
0.013
0.016
0.020
0.0075
0.008
0.010
0.189
0.199
0.209
0.146
0.154
0.161
0.050
0.228
0.236
0.244
0.015
0.028
0.050
0.004
0O
8O
Rev. 1.0
8/8
Nov 14, 2005
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