AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Features General Description - Lower On-Resistance - Simple Drive Requirement - Fast Switching Performance - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. Product Summary CH BVDSS (V) RDS(ON) (mΩ) ID (A) N P 30 -30 28 55 6.9 -5.3 The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicat ions such as DC/DC converters. Pin Descriptions Pin Assignments S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Pin Name Description S1 G1 D1 S2 G2 D2 Source (NMOS) Gate (NMOS) Drain (NMOS) Source (PMOS) Gate (PMOS) Drain (PMOS) SO-8 Ordering information Feature F :MOSFET A X 8510C X X PN Package Packing S: SOP-8 Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Nov 14, 2005 1/8 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TJ, TSTG Parameter N-Channel P-Channel 30 -30 ±20 ±20 TA=25ºC 6.9 -5.3 Continuous Drain Current (Note 1) 5.5 -4.2 TA=70ºC Pulsed Drain Current (Note 2) 30 -30 Total Power Dissipation TA=25ºC 2.0 Linear Deratomg Factor 0.016 Operating Junction and Storage Temperature Range -55 to 150 Units Drain-Source Voltage Gate-Source Voltage V V A W W/ ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Maximum 62.5 Max. Units ºC/W N-CH Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS / TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Min. Typ. Max. Units 30 - - V - 0.02 - V/ C 1 - 4.6 28 40 3 - VDS=30V, VGS=0V - - 1 VDS=24V, VGS=0V - - 25 VGS=±20V ID=6.9A, VDS=24V, VGS=4.5V VDS=15V, ID=1A, RG=3.3Ω, VGS=10V RD=15Ω VGS=0V, VDS=25V, f=1.0MHz - 10 2 6 8 7 20 6 540 160 120 ±100 16 870 - Test Conditions IS=1.7A, VGS=0V IS=6.9A, VGS=0V dl/dt=100A/µs Min. - Typ. 20 11 Max. 1.2 - VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=5A VGS=4.5V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=5A o mΩ V S uA nA nC ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge Anachip Corp. www.anachip.com.tw Rev. 1.0 2/8 Unit V ns nC Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET P-CH Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol BVDSS BVDSS / TJ VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Reference to 25oC, ID=1mA Coefficient VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A Gate Threshold Voltage VDS=VGS, ID=-250uA Forward Transconductance VDS=-10V, ID=-5A Drain-Source Leakage Current VDS=-30V, VGS=0V (TJ=25oC) Drain-Source Leakage Current VDS=-24V, VGS=0V (TJ=70oC) Gate-Source Leakage VGS=±20V Total Gate Charge (Note 3) ID=-5.3A, VDS=-24V, Gate-Source Charge VGS=-4.5V Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) VDS=-15V, ID=1A, Rise Time RG=3.3Ω, VGS=-10V Turn-Off Delay Time RD=15Ω Fall-Time Input Capacitance VGS=0V, VDS=25V, Output Capacitance f=1.0MHz Reverse Transfer Capacitance -30 - - V - -0.023 - V/oC 1 - 4.9 55 90 -3 - - - -1 - - -25 - 9 2 6 10 8 25 13 580 180 120 ±100 15 930 - Min. - Typ. 21 17 Max. -1.2 - mΩ V S uA nA nC ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time) Reverse Recovery Charge 2 Test Conditions IS=1.7A, VGS=0V IS=-5.3A, VGS=0V, dl/dt=100A/µs o Unit V ns nC Note 1: Surface mounted on 1 in copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw Rev. 1.0 3/8 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Performance Characteristics (N-Channel) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.0 4/8 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Performance Characteristics (N-Channel) (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operation Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw Rev. 1.0 5/8 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Performance Characteristics (P-Channel) (Continued) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.0 6/8 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Performance Characteristics (P-Channel) (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operation Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw Rev. 1.0 7/8 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Marking Information SO-8L ( Top View ) 8 Logo Part Number 8510C AA Y W Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 1 ~ Factory code Package Information H E Package Type: SO-8L L VIE W "A " D 0.0 15x45 7 (4X ) e B A1 C A (4X ) A2 7 VI EW "A" y Symbol A A1 A2 B C D E e H L y Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 0O 8O Anachip Corp. www.anachip.com.tw Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 0O 8O Rev. 1.0 8/8 Nov 14, 2005