HP MSA-0236-BLK Cascadable silicon bipolar mmic amplifier Datasheet

Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0235, -0236
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.7 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0235 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0236.
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9697E
OUT
MSA
Vd = 5 V
6-274
35 micro-X Package[1]
Note:
1. Short leaded 36 package available
upon request.
MSA-0235, -0236 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature[4]
60 mA
325 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,5]:
θjc = 145°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.9 mW/°C for TC > 153°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Parameters and Test Conditions: Id = 25 mA, ZO = 50 Ω
Symbol
GP
Power Gain (|S21| 2)
f = 0.1 GHz
∆GP
Gain Flatness
f = 0.1 to 1.6 GHz
f3 dB
3 dB Bandwidth
VSWR
Units
Min.
Typ.
Max.
dB
11.5
12.5
13.5
dB
± 0.6
± 1.0
GHz
2.7
Input VSWR
f = 0.1 to 3.0 GHz
1.2:1
Output VSWR
f = 0.1 to 3.0 GHz
1.4:1
NF
50 Ω Noise Figure
f = 1.0 GHz
dB
6.5
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
4.5
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
17.0
tD
Group Delay
f = 1.0 GHz
psec
125
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
4.5
5.0
5.5
–8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0235
10
Strip
MSA-0236-BLK
100
Antistatic Bag
MSA-0236-TR1
1000
7" Reel
For more information refer to PACKAGING section, “Tape and Reel
Packaging for Semiconductor Devices.”
6-275
MSA-0235, -0236 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 25 mA)
S21
S11
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.08
.08
.08
.08
.07
.07
.06
.03
.03
.09
.16
.20
.27
.41
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
170
163
147
130
112
91
47
–1
–115
–157
–175
173
136
94
12.6
12.5
12.5
12.4
12.2
12.1
11.6
11.0
10.2
9.3
8.3
7.2
5.2
3.2
4.25
4.23
4.19
4.14
4.09
4.02
3.80
3.53
3.24
2.92
2.60
2.29
1.81
1.44
176
171
161
152
143
134
112
91
75
57
39
23
–6
–33
–18.6
–18.5
–18.4
–18.3
–18.1
–18.0
–17.3
–16.3
–15.4
–15.1
–14.4
–14.1
–13.5
–13.5
.118
.119
.120
.121
.125
.126
.137
.153
.169
.176
.190
.198
.211
.212
2
2
4
4
7
10
11
10
12
8
3
–2
–11
–24
.16
.15
.15
.15
.15
.15
.13
.11
.09
.08
.09
.11
.15
.11
–6
–10
–21
–30
–39
–46
–66
–89
–111
–127
–129
–118
–117
–148
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
12
Gain Flat to DC
I d (mA)
G p (dB)
10
8
6
40
14
TC = +125°C
TC = +25°C
30 T = –55°C
C
12
G p (dB)
14
20
10
8
4
10
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
6
2
0
0.1
0.3 0.5
1.0
3.0
4
0
6.0
0
1
2
FREQUENCY (GHz)
5
15
6
12
10
6
5
P1 dB
5
8
6
4
6.5
I d = 25 mA
6.0
4
4
I d = 18 mA
I d = 25 mA
I d = 40 mA
2
3
2
–55
3
–25
+25
+85
40
I d = 40 mA
NF (dB)
7
P1 dB (dBm)
NF
6
35
7.0
8
8
30
7.5
GP
7
25
Figure 3. Power Gain vs. Current.
12
13
11
20
I d (mA)
Figure 2. Device Current vs. Voltage.
NF (dB)
G p (dB)
4
Vd (V)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 25 mA.
P1 dB (dBm)
3
2
+125
I d = 18 mA
0
0.1
0.2 0.3
5.5
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f=1.0 GHz, Id = 25 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-276
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
A02
RF INPUT
1
3
.020
.508
2
.057 ± .010
1.45 ± .25
.022
.56
GROUND
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
6-277
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