CYStech Electronics Corp. Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Complementary to BTD2150AT3 • Pb-free package Symbol Outline BTB1424AT3 TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol Limit Unit VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg -50 -50 -6 -3 -7 1 10 150 -55~+150 V V V A A *1 W °C °C Note : *1. Single Pulse Pw≦350µs, Duty≦2%. BTB1424AT3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -50 -50 -6 82 120 - Typ. -0.3 -1 240 35 Max. -0.1 -0.1 -0.5 -1.5 560 - Unit V V V µA µA V V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-40V VEB=-5V IC=-2A, IB=-0.1A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-2V, IC=-0.5A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Q R S Range 120~270 180~390 270~560 Ordering Information Device BTB1424AT3 BTB1424AT3 Package TO-126 (Pb-free) Shipping 500 pcs / bag CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 Saturation Voltage---(mV) Current Gain---HFE VCE=5V VCE=2V 100 VCE=1V 1000 VCESAT@IC=60IB 100 10 VCESAT=30IB VCESAT=10IB 10 1 1 10 100 1000 10000 1 10 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Power Derating Curve 1.2 10000 VBESAT@IC=10IB Power Dissipation---PD(W) Saturation Voltage---(mV) 100 1000 Collector Current---IC(mA) 1000 100 1 0.8 0.6 0.4 0.2 0 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 Ambient Temperature---TA(℃) 200 Power Derating Curve Power Dissipation---PD(W) 12 10 8 6 4 2 0 0 BTB1424AT3 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-126 Dimension D E J I Marking: K A M B α3 B1424 1 2 3 α4 G C Style: Pin 1.Emitter 2.Collector 3.Base F H L 3-Lead TO-126 Plastic Package CYStek Package Code: T3 α1 α2 *: Typical Inches Min. Max. *3° *3° *3° *3° 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 DIM α1 α2 α3 α4 A B C D E Millimeters Min. Max. *3° *3° *3° *3° 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1424AT3 CYStek Product Specification