isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDW55/57/59 DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS)= 45V- BDW55 = 60V- BDW57 = 80V- BDW59 ·Complement to Type BDW56/58/60 APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 1kΩ Collector-Emitter Voltage VALUE BDW55 45 BDW57 60 BDW59 100 BDW55 45 BDW57 60 BDW59 100 BDW55 45 BDW57 60 BDW59 80 UNIT V V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 1.5 A PC Collector Power Dissipation @ TC=25℃ 8 W TJ Junction Temperature 175 ℃ -65~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 10 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 100 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDW55/57/59 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW55 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW57 MIN TYP. MAX UNIT 45 IC= 10mA ;IB=0 B BDW59 V 60 80 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.5 V VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 2V 1.0 V ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 0.1 μA BDW55 VCB= 30V; IE=0;TJ= 150℃ 10 BDW57 VCB= 45V; IE=0;TJ= 150℃ 10 BDW59 VCB= 70V; IE=0;TJ= 150℃ 10 10 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 5mA ; VCE= 2V 25 hFE-2 DC Current Gain IC= 150mA ; VCE= 2V 40 hFE-3 DC Current Gain IC= 500mA ; VCE= 2V 25 Current-Gain—Bandwidth Product IC= 50mA ; VCE= 5V;ftest= 35MHz fT μA μA 250 250 MHz 30 ns 30 ns 500 ns 80 ns Switching times td Delay Time tr Rise Time tstg tf Storage Time IC= 0.15A; IB1= -IB2= 15mA; VCC= 10.2V Fall Time isc Website：www.iscsemi.cn 2