NCP623, NCV8623 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control The NCP623/NCV8623 low dropout linear regulator can deliver up to 150 mA of output current with a typical dropout voltage of 180 mV. This low dropout feature helps to maintain a regulated output voltage for a longer period of time as the lifetime of the battery decreases. It is the ideal choice for noise sensitive environments like portable applications where noise performance and space are at a premium. The typical output noise voltage specification is 25 mVRMS. An additional noise saving feature of this device is its ability to filter choppy signals on the power supply by providing a typical DC ripple rejection of −90 dB and −70 dB at 1.0 kHz. The NCP623 is designed to work with very low ESR capacitors such as ceramic capacitors which are common in the industry now. Additional features such as thermal shutdown and short−circuit protection provide for a robust system design. Features • Very Low Quiescent Current 170 mA (ON, no load), 100 nA • • • • • • • • • • • • (OFF, no load) Very Low Dropout Voltage, Typical Value is 137 mV at an Output Current of 100 mA Very Low Noise with External Bypass Capacitor (10 nF), Typically 25 mVRMS over 100 Hz to 100 kHz Internal Thermal Shutdown Extremely Tight Line Regulation Typically −90 dB Ripple Rejection −70 dB @ 1.0 kHz Line Transient Response: 1.0 mV for DVin = 3.0 V Extremely Tight Load Regulation, Typically 20 mV at DIout = 150 mA Multiple Output Voltages Available Logic Level ON/OFF Control (TTL−CMOS Compatible) Output Capacitor ESR Can Vary from 0 W to 3.0 W NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MARKING DIAGRAM Ç XXXX X23yy ALYW G G DFN6, 3X3 MN SUFFIX CASE 488AE 1 XXXXX = Device Code NCP623yy for NCP623 NCV8623yyfor NCV8623 yy = 25, 28, 30, 33, 40 or 50 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb Free Package (Note: Microdot may be in either location) PIN CONNECTIONS Ç Ç Ç VIN 1 6 GND 2 5 VOUT 3 4 ÇÇ ÇÇ ÇÇ ON/OFF GND Bypass (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 14 of this data sheet. Applications • All Portable Systems, Battery Powered Systems, Cellular Telephones, Radio Control Systems, Toys and Low Voltage Systems © Semiconductor Components Industries, LLC, 2015 October, 2015 − Rev. 11 1 Publication Order Number: NCP623/D NCP623, NCV8623 VIN On/Off Thermal Shutdown ON/OFF Band Gap Reference Bypass VOUT * Current Limit * Antisaturation * Protection GND GND Figure 1. NCP623/NCV8623 Block Diagram MAXIMUM RATINGS Rating Power Supply Voltage Power Dissipation and Thermal Resistance Maximum Power Dissipation Case 488AE (DFN6, 3x3) MN Suffix Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Operating Ambient Temperature Range NCP623 NCV8623 Maximum Junction Temperature Storage Temperature Range ESD Protection − Human Body Model − Machine Model Symbol Value Unit Vin 12 V PD Internally Limited W RqJA **psi−JC* or YJC 161 13 °C/W TA −40 to +85 −40 to +125 °C TJmax 150 °C Tstg −60 to +150 °C VESD 2000 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *“C’’ (“case’’) is defined as the solder−attach interface between the center of the exposed pad on the bottom of the package, and the board to which it is attached. ** Refer to the JEDEC Specs (51−2, 51−6). www.onsemi.com 2 NCP623, NCV8623 ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values; TA = −40°C to +85°C for NCP623 and TA = −40°C to +125°C for NCV8623, Max TJ = 150°C) Symbol Min Typ Max Input Voltage Range VON/OFF 2.5 − Vin ON/OFF Input Current (All versions) VON/OFF = 2.4 V ION/OFF ON/OFF Input Voltages (All versions) Logic “0”, i.e. OFF State Logic “1”, i.e. ON State VON/OFF Characteristics Unit CONTROL ELECTRICAL CHARACTERISTICS V mA − 2.5 − − 2.2 − − 0.3 − − 0.1 2.0 − 170 200 − 900 1400 175 210 − 2.45 2.74 2.94 3.23 3.92 4.41 4.90 2.5 2.8 3.0 3.3 4.0 4.5 5.0 2.55 2.86 3.06 3.37 4.08 4.59 5.1 2.41 2.70 2.89 3.18 3.86 4.34 4.83 2.5 2.8 3.0 3.3 4.0 4.5 5.0 2.59 2.90 3.11 3.42 4.14 4.66 5.17 − 2.0 10 − − − 8.0 15 20 25 35 45 − − − 30 137 180 90 230 260 Ripple Rejection (All versions) Vin = Vout + 1.0 V, Vpp = 1.0 V, f = 1.0 kHz, Iout = 60 mA 60 70 − Line Transient Response Vin = Vout + 1.0 V to Vout + 4.0 V, Iout = 60 mA, d(Vin)/dt = 15 mV/ms − 1.0 − V CURRENTS PARAMETERS Current Consumption in OFF State (All versions) OFF Mode Current: VIN = Vout +1.0 V, Iout = 0 mA IQOFF Current Consumption in ON State (All versions) ON Mode Sat Current: Vin = Vout + 1.0 V, Iout = 0 mA IQON Current Consumption in Saturation ON State (All versions) ON Mode Sat Current: VIN = 2.5 V or Vin = Vout − 0.4 V (Whichever is Higher), Iout = 0 mA IQSAT Current Limit Vin = Vout + 1.0 V, (All versions) (Note 1) IMAX Vin = Vout + 1.0 V, TA = 25°C, 1.0 mA < Iout < 150 mA 2.5 Suffix 2.8 Suffix 3.0 Suffix 3.3 Suffix 4.0 Suffix 4.5 Suffix 5.0 Suffix Vout Vin = Vout + 1.0 V, −40°C < TA < 85°C, 1.0 mA < Iout < 150 mA 2.5 Suffix 2.8 Suffix 3.0 Suffix 3.3 Suffix 4.0 Suffix 4.5 Suffix 5.0 Suffix Vout mA mA mA mA V V LINE AND LOAD REGULATION, DROPOUT VOLTAGES Regline Line Regulation (All versions) Vout + 1.0 V < Vin < 12 V, Iout = 60 mA Load Regulation (All versions) Vin = Vout + 1.0 V mV Regload Iout = 1.0 to 60 mA mV Iout = 1.0 to 100 mA Iout = 1.0 to 150 mA Dropout Voltage (All versions) Vin − Vout Iout = 10 mA Iout = 100 mA mV Iout = 150 mA DYNAMIC PARAMETERS dB www.onsemi.com 3 mV NCP623, NCV8623 ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values; TA = −40°C to +85°C for NCP623 and TA = −40°C to +125°C for NCV8623, Max TJ = 150°C) Characteristics Symbol Min Typ Max Unit DYNAMIC PARAMETERS mVrms VRMS Output Noise Voltage (All versions) Cout = 1.0 mF, Iout = 60 mA, f = 100 Hz to 100 kHz Cbypass = 10 nF Cbypass = 1.0 nF − − − 25 40 65 − − − − 230 − nV/ √Hz − − 40 1.1 − − ms ms − 150 − °C Cbypass = 0 nF Output Noise Density Cout = 1.0 mF, Iout = 60 mA, f = 1.0 kHz VN Output Rise Time (All versions) Cout = 1.0 mF, Iout = 30 mA, VON/OFF = 0 to 2.4 V 1% of ON/OFF Signal to 99% of Nominal Output Voltage tr Without Bypass Capacitor With Cbypass = 10 nF THERMAL SHUTDOWN Thermal Shutdown (All versions) 1. IMAX (Output Current Limit) is the current measured when the output voltage drops below 0.3 V with respect to Vout at Iout = 30 mA. www.onsemi.com 4 NCP623, NCV8623 DEFINITIONS Maximum Package Power Dissipation − The maximum package power dissipation is the power dissipation level at which the junction temperature reaches its maximum value i.e. 125°C. The junction temperature is rising while the difference between the input power (VCC X ICC) and the output power (Vout X Iout) is increasing. Depending on ambient temperature, it is possible to calculate the maximum power dissipation, maximum load current or maximum input voltage (see Application Hints: Protection). The maximum power dissipation supported by the device is a lot increased when using appropriate application design. Mounting pad configuration on the PCB, the board material and also the ambient temperature are affected the rate of temperature rise. It means that when the IC has good thermal conductivity through PCB, the junction temperature will be “low” even if the power dissipation is great. The thermal resistance of the whole circuit can be evaluated by deliberately activating the thermal shutdown of the circuit (by increasing the output current or raising the input voltage for example). Then you can calculate the power dissipation by subtracting the output power from the input power. All variables are then well known: power dissipation, thermal shutdown temperature (150°C for NCP623) and ambient temperature. Load Regulation − The change in output voltage for a change in load current at constant chip temperature. Dropout Voltage − The input/output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 100 mV below its nominal value (which is measured at 1.0 V differential), dropout voltage is affected by junction temperature, load current and minimum input supply requirements. Output Noise Voltage − The RMS AC voltage at the output with a constant load and no input ripple, measured over a specified frequency range. Maximum Power Dissipation − The maximum total dissipation for which the regulator will operate within specifications. Quiescent Current − Current which is used to operate the regulator chip and is not delivered to the load. Line Regulation − The change in input voltage for a change in the input voltage. The measurement is made under conditions of low dissipation or by using pulse techniques such that the average chip temperature is not significantly affected. Line Transient Response − Typical over− and undershoot response when input voltage is excited with a given slope. Thermal Protection − Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated, typically 150°C, the regulator turns off. This feature is provided to prevent catastrophic failures from accidental overheating. www.onsemi.com 5 NCP623, NCV8623 APPLICATION HINTS Input Decoupling − As with any regulator, it is necessary to reduce the dynamic impedance of the supply rail that feeds the component. A 1.0 mF capacitor either ceramic or tantalum is recommended and should be connected close to the NCP623 package. Higher values will correspondingly improve the overall line transient response. Output Decoupling − Output capacitors exhibiting ESRs ranging from a few mW up to 3.0 W can safely be used. The minimum decoupling value is 1.0 mF and can be augmented to fulfill stringent load transient requirements. The regulator works with ceramic chip capacitors as well as tantalum devices. Noise Performances − Unlike other LDOs, the NCP623 is a true low−noise regulator. With a 10 nF bypass capacitor, it typically reaches 25 mVRMS overall noise between 100 Hz and 100 kHz. Spectral density graphics as well as noise dependency versus bypass capacitor information is included in this datasheet. The bypass capacitor impacts the startup phase of the NCP623 as depicted by the data−sheet curves. A typical 1.0 ms settling time is achieved with a 10 nF bypass capacitor. However, due to its low−noise architecture, the NCP623 can operate without bypass and thus offers a typical 20 ms startup phase. In that case, the typical output noise stays lower than 65 mVRMS between 100 Hz − 100 kHz. Protections − The NCP623 includes several protections functions. The output current is internally limited to a minimum of 175 mA while temperature shutdown occurs if the die heats up beyond 150°C. These value lets you assess the maximum differential voltage the device can sustain at a given output current before its protections come into play. The maximum dissipation the package can handle is given by: If TJmax is internally limited to 150°C, then the NCP623 can dissipate up to 595 mW @ 25°C. The power dissipated by the NCP623 can be calculated from the following formula: Ptot + ǀ V @ I (I )ǁ ) ǀV * Vout ǁ @ I out in gnd out in or Vin max + Ptot ) Vout @ I out I ) I out gnd If a 150 mA output current is needed, the ground current is extracted from the data−sheet curves: 6.5 mA @ 150 mA. For a NCP623NW28R2 (2.8 V), the maximum input voltage will then be 6.48 V, a rather comfortable margin. Typical Application − The following figure portraits the typical application for the NCP623 where both input/output decoupling capacitors appear. C1 10 nF On/Off 6 C3 1.0 mF 4 C2 1.0 mF NCP623 1 Input 5 2 3 Output Figure 2. A Typical NCP623 Application with Recommended Capacitor Values T – T A P max + Jmax R qJA www.onsemi.com 6 NCP623, NCV8623 NCP623 Wake−up Improvement − In portable applications, an immediate response to an enable signal is vital. If noise is not a concern, the NCP623 without a bypass capacitor settles in nearly 20 ms and typically delivers 65 mVRMS between 100 Hz and 100 kHz. In ultra low−noise systems, the designer needs a 10 nF bypass capacitor to decrease the noise down to 25 mVRMS between 100 Hz and 100 kHz. With the addition of the 10 nF capacitor, the wake−up time expands up to 1.0 ms as shown on the data−sheet curves. If an immediate response is wanted, Figure 3 provides a solution to charge the bypass capacitor with the enable signal without degrading the noise response of the NCP623. At power−on, C4 is discharged. When the control logic sends its wake−up signal by going high, the PNP base is momentarily tied to ground. The PNP switch closes and immediately charges the bypass capacitor C1 toward its operating value. After a few ms, the PNP opens and becomes totally transparent to the regulator. This circuit improves the response time of the regulator which drops from 1.0 ms down to 30 ms. The value of C4 needs to be tweaked in order to avoid any bypass capacitor overload during the wake−up transient. C4 470 pF C1 10 nF MMBT2902LT1 Q1 R2 220 k On/Off + 6 C3 1.0 mF 5 4 C2 + 1.0 mF NCP623 1 2 3 Output Input Figure 3. A PNP Transistor Drives the Bypass Pin when Enable Goes High www.onsemi.com 7 NCP623, NCV8623 NCP623 Without Wake−up Improvement (Typical Response) 1 ms NCP623 With Wake−up Improvement (Typical Response) 30 ms Figure 4. NCP623 Wake−up Improvement with Small PNP Transistor The PNP connected to the bypass pin does not degrade the noise response of the NCP623. Figure 5 displays the noise density using the setup in Figure 3. The typical noise level is 26 mVRM (100 Hz to 25 kHz) at IOUT = 60 mA. 350 Vin = 3.8 V Vout = 2.8 V Co = 1.0 mF Iout = 60 mA Tamb = 25°C nV/sqrt (Hz) 300 250 200 Cbyp = 10 nF 150 100 50 Output Noise = 26 mVrms C = 10 nF @ 100 Hz − 100 kHz 0 100 1,000 10,000 100,000 1,000,000 Frequency (Hz) Figure 5. Noise Density of the NCP623 with a 10 nF Bypass Capacitor and a Wake−up Improvement Network www.onsemi.com 8 NCP623, NCV8623 TYPICAL PERFORMANCE CHARACTERISTICS 350 70 nV/Hz 250 3.3 nF 200 60 RMS NOISE (mA) 0 nF 300 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 23°C Cbyp = 10 nF 150 100 Vn = 65 mVrms @ Cbypass = 0 Vn = 30 mVrms @ Cbypass = 3.3 nF Vn = 25 mVrms @ Cbypass = 10 nF 0 over 100 Hz to 100 kHz 100,000 100 1000 10,000 FREQUENCY (Hz) 50 50 40 30 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C 20 10 0 1,000,000 0 Figure 6. Noise Density versus Bypass Capacitor 9.0 10 2.860 1 mA 2.840 OUTPUT VOLTAGE (V) 2.800 OUTPUT VOLTAGE (V) 3.0 4.0 5.0 6.0 7.0 8.0 BYPASS CAPACITOR (nF) Figure 7. RMS Noise versus Bypass Capacitor (100 Hz − 100 kHz) 2.805 2.795 60 mA 2.790 100 mA 2.785 150 mA 2.780 2.820 2.800 −40°C 25°C 2.780 85°C 2.760 2.775 2.770 −40 2.0 1.0 2.740 −20 0 20 40 60 80 20 0 100 40 60 80 100 120 140 TEMPERATURE (°C) OUTPUT CURRENT (mA) Figure 8. Output Voltage (2.8 V) versus Temperature Figure 9. Output Voltage (2.8 V) versus Iout 160 3.06 3.015 3.04 1 mA 3.005 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 3.010 3.000 60 mA 2.995 2.990 100 mA 2.985 2.980 150 mA 2.975 3.02 25°C 3.00 −40°C 2.98 85°C 2.96 2.970 2.965 −40 2.94 −20 0 20 40 60 80 0 100 20 40 60 80 100 120 140 160 TEMPERATURE (°C) TEMPERATURE (°C) Figure 10. Output Voltage (3.0 V) versus Temperature Figure 11. Output Voltage (3.0 V) versus Iout www.onsemi.com 9 NCP623, NCV8623 250 250 200 200 25°C 150 −40°C 100 100 mA 150 60 mA 100 50 50 0 10 100 60 10 mA 0 −40 150 −20 0 40 20 60 80 100 IO (mA) TEMPERATURE (°C) Figure 12. Dropout Voltage versus Iout Figure 13. Dropout Voltage versus Temperature 2.1 GROUND CURRENT (mA) 7.0 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Tamb = 25°C 6.0 5.0 4.0 3.0 2.0 2.05 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA 2.0 1.95 1.9 1.85 1.0 0 0 20 40 60 80 100 120 140 160 180 200 1.8 −40 −20 0 20 40 60 OUTPUT CURRENT (mA) AMBIENT TEMPERATURE (°C) Figure 14. Ground Current versus Output Current Figure 15. Ground Current versus Ambient Temperature QUIESCENT CURRENT ON MODE (mA) GROUND CURRENT (mA) 150 mA 85°C DROPOUT (mV) DROPOUT (mV) TYPICAL PERFORMANCE CHARACTERISTICS 200 190 180 170 160 150 140 130 120 110 100 −40 −20 0 20 40 60 80 100 TEMPERATURE (°C) Figure 16. Quiescent Current versus Temperature www.onsemi.com 10 80 NCP623, NCV8623 TYPICAL PERFORMANCE CHARACTERISTICS 1200 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C SETTLINE TIME (mA) 1000 800 600 200 ms/div 500 mV/div Cbyp = 10 nF 400 200 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Vin = 3.8 V Vout = 2.8 V Cout = 1.0 mF Iout = 50 mA Tamb = 25°C 10 BYPASS CAPACITOR (nF) Figure 17. Output Voltage Settling Time versus Bypass Capacitor 100 ms/div 500 mV/div Cbyp = 3.3 nF Figure 18. Output Voltage Settling Shape Cbypass = 10 nF Vin = 3.8 V Vout = 2.8 V Cout = 1.0 mF Iout = 50 mA Tamb = 25°C 10 ms/div 500 mV/div Cbyp = 0 nF Figure 19. Output Voltage Settling Shape Cbypass = 3.3 nF Vin = 3.8 V Vout = 2.8 V Cout = 1.0 mF Iout = 50 mA Tamb = 25°C Figure 20. Output Voltage Settling Shape without Bypass Capacitor www.onsemi.com 11 NCP623, NCV8623 TYPICAL PERFORMANCE CHARACTERISTICS Y1 Vin = 3.8 to 7.0 V Y1 = 1.0 mV/div Y2 = 1.0 V/div X = 1.0 ms Iout = 60 mA Tamb = 25°C dVin = 3.2 V Y2 Figure 21. Line Transient Response Y1 Y2 Vin = 3.8 V Y1 = 100 mV/div Y2 = 20 mV/div X = 200 ms/div Tamb = 25°C Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 20 ms Tamb = 25°C Y1 Y2 Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Figure 22. Iout = 3.0 mA to 150 mA Figure 23. ISlope = 100 mA/ms (Large Scale) Iout = 3.0 mA to 150 mA Y1 Y1 Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 100 ms Tamb = 25°C Y2 Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 200 ms Tamb = 25°C Y2 Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Figure 24. ISlope = 6.0 mA/ms (Large Scale) Iout = 3.0 mA to 150 mA Figure 25. ISlope = 2.0 mA/ms (Large Scale) Iout = 3.0 mA to 150 mA www.onsemi.com 12 NCP623, NCV8623 100 1000 OUTPUT CAPACITOR ESR UNSTABLE OUTPUT CAPACITOR ESR 85°C −40°C 10 25°C STABLE 1.0 0.10 Cout = 1.0 mF Vout = 3.0 V UNSTABLE 100 150 mF 10 0.1 mF 0 10 20 30 40 50 60 70 80 90 100110 120130140150 OUTPUT CURRENT (mA) 0 10 20 30 40 50 60 70 80 90 100110120130140150 OUTPUT CURRENT (mA) Figure 26. Output Stability versus Output Current Over Temperature (1.0 mF, 3.0 V) Figure 27. Output Stability with Output Capacitor Change 100 0 85°C UNSTABLE −20 −40°C 10 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C −10 25°C −30 −40 STABLE 1.0 (dB) OUTPUT CAPACITOR ESR STABLE 1.0 0.01 −50 −60 −70 0.1 −80 Cout = 150 mF Vout = 3.0 V −90 −100 0.01 0 0 85°C −40°C 10 (dB) 25°C STABLE 1.0 100,000 Figure 29. Ripple Rejection versus Frequency with 10 nF Bypass Capacitor 100 UNSTABLE 1000 10,000 FREQUENCY (Hz) 100 10 20 30 40 50 60 70 80 90 100110 120130140150 OUTPUT CURRENT (mA) Figure 28. Output Stability versus Output Current Over Temperature (150 mF, 3.0 V) OUTPUT CAPACITOR ESR 1.0 mF 85°C Vin = 3.8 V Vout = 2.8 V −20 C = 1.0 mF O Iout = 60 mA −40 Tamb = 25°C −60 25°C −80 −40°C 0.10 UNSTABLE 0.01 0 Cout = 0.0 mF Vout = 3.0 V −100 −120 10 20 30 40 50 60 70 80 90 100110120130140150 10 100 1000 10,000 100,000 1,000,000 OUTPUT CURRENT (mA) FREQUENCY (Hz) Figure 31. Output Stability versus Output Current Over Temperature (0.1 mF, 3.0 V) Figure 30. Ripple Rejection versus Frequency without Bypass Capacitor www.onsemi.com 13 NCP623, NCV8623 ORDERING INFORMATION Device NCP623MN−25R2G Version Marking 2.5 V 25 2.8 V 28 3.0 V 30 3.3 V 33 4.0 V 40 5.0 V 50 Package Shipping† DFN6, 3x3 (Pb−Free) 3000 Tape & Reel NCV8623MN−25R2G* NCP623MN−28R2G NCV8623MN−28R2G* NCP623MN−30R2G NCV8623MN−30R2G* NCP623MN−33R2G NCV8623MN−33R2G* NCP623MN−40R2G NCV8623MN−40R2G* NCP623MN−50R2G NCV8623MN−50R2G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 14 NCP623, NCV8623 PACKAGE DIMENSIONS DFN6, 3x3 CASE 488AE ISSUE B NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS ONTO BOTTOM SURFACE OF TERMINAL b. EDGE OF PACKAGE A D B L1 DETAIL A BOTTOM VIEW E PIN ONE REFERENCE ÇÇÇ ÇÇÇ ÇÇÇ 0.15 C 2X DIM A A1 A3 b D D2 E E2 e K L L1 EXPOSED Cu MOLD COMPOUND 0.15 C 2X TOP VIEW DETAIL B 0.10 C 6X 0.08 C A1 SEATING PLANE ÇÇÇ ÇÇÇ ÇÇÇ A1 ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ (A3) DETAIL B SIDE VIEW SOLDERING FOOTPRINT* A 2.45 0.964 ÇÇÇÇÇÇ ÇÇÇÇÇÇ (A3) C SIDE VIEW D2 ÇÇÇ ÇÇÇ 1 6X L 6X K 3 ÇÇÇ 6 e 0.63 0.025 4 BOTTOM VIEW b Exposed Pad SMD Defined 1.700 0.685 3.31 0.130 DETAIL A E2 6X MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 0.25 0.18 0.30 3.00 BSC 2.25 2.55 3.00 BSC 1.55 1.85 0.65 BSC 0.20 −−− 0.30 0.50 0.00 0.021 ÇÇÇÇÇÇ ÇÇÇÇÇÇ NOTE 3 0.10 C A B 0.35 0.014 0.65 0.025 SCALE 10:1 0.05 C mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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