ON MUN2212 Npn silicon bias resistor transistor Datasheet

MUN2211T1 Series
Preferred Devices
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−59 package which is designed for low power surface
mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
• The SC−59 package can be soldered using wave or reflow. The
modified gull−winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
• Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTORS
PIN 2
BASE
(INPUT)
R1
R2
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
MARKING DIAGRAM
8x M
SC−59
CASE 318D
STYLE 1
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
ORDERING INFORMATION
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Collector Current
8x = Specific Device Code*
M = Date Code
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
RqJA
540 (Note 1)
370 (Note 2)
°C/W
Thermal Resistance −
Junction-to-Lead
RqJL
264 (Note 1)
287 (Note 2)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 11
1
DEVICE MARKING INFORMATION
*See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MUN2211T1/D
MUN2211T1 Series
DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping †
SC−59
8A
10
10
3000/Tape & Reel
SC−59
(Pb−Free)
8A
10
10
3000/Tape & Reel
SC−59
8B
22
22
3000/Tape & Reel
SC−59
(Pb−Free)
8B
22
22
3000/Tape & Reel
SC−59
8C
47
47
3000/Tape & Reel
SC−59
(Pb−Free)
8C
47
47
3000/Tape & Reel
SC−59
8D
10
47
3000/Tape & Reel
SC−59
(Pb−Free)
8D
10
47
3000/Tape & Reel
SC−59
8E
10
∞
3000/Tape & Reel
SC−59
(Pb−Free)
8E
10
∞
3000/Tape & Reel
SC−59
8F
4.7
∞
3000/Tape & Reel
SC−59
(Pb−Free)
8F
4.7
∞
3000/Tape & Reel
MUN2230T1 (Note 3)
SC−59
8G
1.0
1.0
3000/Tape & Reel
MUN2231T1 (Note 3)
SC−59
8H
2.2
2.2
3000/Tape & Reel
MUN2232T1 (Note 3)
SC−59
8J
4.7
4.7
3000/Tape & Reel
SC−59
(Pb−Free)
8J
4.7
4.7
3000/Tape & Reel
SC−59
8K
4.7
47
3000/Tape & Reel
SC−59
(Pb−Free)
8K
4.7
47
3000/Tape & Reel
MUN2234T1 (Note 3)
SC−59
8L
22
47
3000/Tape & Reel
MUN2236T1
SC−59
8N
100
100
3000/Tape & Reel
MUN2237T1
SC−59
8P
47
22
3000/Tape & Reel
SC−59
(Pb−Free)
8P
47
22
3000/Tape & Reel
MUN2240T1 (Note 3)
SC−59
8T
47
∞
3000/Tape & Reel
MUN2241T1 (Note 3)
SC−59
8U
100
∞
3000/Tape & Reel
Device
MUN2211T1
MUN2211T1G
MUN2212T1
MUN2212T1G
MUN2213T1
MUN2213T1G
MUN2214T1
MUN2214T1G
MUN2215T1 (Note 3)
MUN2215T1G (Note 3)
MUN2216T1 (Note 3)
MUN2216T1G (Note 3)
MUN2232T1G (Note 3)
MUN2233T1 (Note 3)
MUN2233T1G (Note 3)
MUN2237T1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
http://onsemi.com
2
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
150
140
350
350
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Characteristic
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
MUN2230T1/MUN2231T1
(IC = 10 mA, IB = 1 mA)
MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V,
(VCC = 5.0 V,
(VCC = 5.0 V,
VB = 5.5 V, RL = 1.0 kW)
VB = 4.0 V, RL = 1.0 kW)
VB = 5.0 V, RL = 1.0 kW)
MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2213T1
MUN2240T1
MUN2236T1
MUN2237T1
MUN2241T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
http://onsemi.com
3
VOL
Vdc
Vdc
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
70
32.9
32.9
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
100
47
47
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
130
61.1
61.1
100
kW
R1/R2
0.8
1.0
1.2
0.17
−
0.21
−
0.25
−
0.8
0.055
0.38
1.7
1.0
0.1
0.47
2.1
1.2
0.185
0.56
2.6
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
MUN2230T1
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN2215T1
MUN2216T1
MUN2233T1
MUN2240T1
Input Resistor
Resistor Ratio
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2235T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
MUN2211T1/MUN2212T1/MUN2213T1/
MUN2236T1
MUN2214T1
MUN2215T1/MUN2216T1/MUN2240T1/
MUN2241T1
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
MUN2234T1
MUN2237T1
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
RqJA = 370°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
4
150
MUN2211T1 Series
1
1000
IC/IB = 10
VCE = 10 V
TA=−25°C
25°C
75°C
0.1
hFE , DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2211T1
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
80
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
1
0.1
0.01
VO = 5 V
0.001
50
TA=−25°C
10
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
TA=−25°C
VO = 0.2 V
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
10
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
50
10
MUN2211T1 Series
1000
1
IC/IB = 10
VCE = 10 V
TA=−25°C
TA=75°C
25°C
25°C
hFE , DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2212T1
75°C
0.1
−25°C
100
0.01
0.001
0
20
60
40
IC, COLLECTOR CURRENT (mA)
10
80
1
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
0
0
10
20
30
40
25°C
TA=−25°C
10
1
0.1
0.01
0.001
50
75°C
VO = 5 V
2
0
4
6
8
10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
C ob, CAPACITANCE (pF)
4
3
100
TA=−25°C
10
75°C
25°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 11. Input Voltage versus Output Current
http://onsemi.com
6
50
MUN2211T1 Series
10
1000
TA=−25°C
IC/IB = 10
25°C
1
VCE = 10 V
hFE , DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2213T1
75°C
0.1
0.01
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
80
10
1
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0
25°C
75°C
TA=−25°C
10
1
0.1
0.01
0.2
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
Figure 14. Output Capacitance
100
V in , INPUT VOLTAGE (VOLTS)
C ob, CAPACITANCE (pF)
100
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
IC, COLLECTOR CURRENT (mA)
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
10
Figure 15. Output Current versus Input Voltage
TA=−25°C
0.1
8
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage versus Output Current
http://onsemi.com
7
MUN2211T1 Series
1
300
TA=−25°C
IC/IB = 10
25°C
TA=75°C
VCE = 10
250
25°C
hFE , DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2214T1
0.1
200
75°C
−25°C
150
0.01
100
50
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
0
80
1
2
4
6
Figure 17. VCE(sat) versus IC
100
75°C
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
25°C
TA=−25°C
10
VO = 5 V
1
50
Figure 19. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
TA=−25°C
VO= 0.2 V
25°C
75°C
1
0.1
0
10
8
10
Figure 20. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 21. Input Voltage versus Output Current
http://onsemi.com
8
50
MUN2211T1 Series
1
1000
VCE = 10 V
IC/IB = 10
TA = −25°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2236T1
25°C
75°C
0.1
0.01
75°C
TA = −25°C
100
0
5
15
25
10
20
30
IC, COLLECTOR CURRENT (mA)
35
10
40
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
30
35
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
TA = −25°C
10
25°C
1
0.1
45
Figure 24. Output Capacitance
VO = 5 V
0
VO = 0.2 V
5
10
15
20
25
30
Vin, INPUT VOLTAGE (VOLTS)
25°C
TA = −25°C
75°C
10
1
0.1
0
5
35
40
Figure 25. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
f = 1 MHz
lE = 0 V
TA = 25°C
4
100
Figure 23. DC Current Gain
5
4.5
25°C
10
15
20
25
IC, COLLECTOR CURRENT (mA)
30
Figure 26. Input Voltage versus Output Current
http://onsemi.com
9
35
MUN2211T1 Series
1
1000
VCE = 10 V
IC/IB = 10
75°C
TA = −25°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2237T1
25°C
75°C
0.1
0.01
0
5
15
25
10
20
30
IC, COLLECTOR CURRENT (mA)
TA = −25°C
100
35
10
1
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
1.6
1.4
1.2
1
0.8
0.6
f = 1 MHz
lE = 0 V
TA = 25°C
0
5
10
15
20
25
30
35
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
Figure 29. Output Capacitance
75°C
TA = −25°C
10
25°C
1
0.1
0.01
0.001
VO = 5 V
0
2
4
6
8
10
12
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = −25°C
25°C
75°C
10
1
0
5
14
16
Figure 30. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.8
0.2
0
100
Figure 28. DC Current Gain
2
0.4
25°C
10
15
20
25
30
IC, COLLECTOR CURRENT (mA)
35
Figure 31. Input Voltage versus Output Current
http://onsemi.com
10
40
MUN2211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 33. Open Collector Inverter:
Inverts the Input Signal
Figure 34. Inexpensive, Unregulated Current Source
http://onsemi.com
11
MUN2211T1 Series
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE F
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
L
3
S
2
DIM
A
B
C
D
G
H
J
K
L
S
B
1
D
G
J
C
INCHES
MIN
MAX
0.1063 0.1220
0.0512 0.0669
0.0394 0.0511
0.0138 0.0196
0.0670 0.0826
0.0005 0.0040
0.0034 0.0070
0.0079 0.0236
0.0493 0.0649
0.0985 0.1181
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
K
H
MILLIMETERS
MIN
MAX
2.70
3.10
1.30
1.70
1.00
1.30
0.35
0.50
1.70
2.10
0.013
0.100
0.09
0.18
0.20
0.60
1.25
1.65
2.50
3.00
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
12
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MUN2211T1/D
Similar pages