MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 1 ESD Rating − Machine Model: Class B • The SC−59 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 2 BASE (INPUT) R1 R2 3 2 1 PIN 3 COLLECTOR (OUTPUT) PIN 1 EMITTER (GROUND) MARKING DIAGRAM 8x M SC−59 CASE 318D STYLE 1 Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) mW ORDERING INFORMATION °C/W See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Collector Current 8x = Specific Device Code* M = Date Code THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient RqJA 540 (Note 1) 370 (Note 2) °C/W Thermal Resistance − Junction-to-Lead RqJL 264 (Note 1) 287 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 inch Pad. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 11 1 DEVICE MARKING INFORMATION *See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MUN2211T1/D MUN2211T1 Series DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping † SC−59 8A 10 10 3000/Tape & Reel SC−59 (Pb−Free) 8A 10 10 3000/Tape & Reel SC−59 8B 22 22 3000/Tape & Reel SC−59 (Pb−Free) 8B 22 22 3000/Tape & Reel SC−59 8C 47 47 3000/Tape & Reel SC−59 (Pb−Free) 8C 47 47 3000/Tape & Reel SC−59 8D 10 47 3000/Tape & Reel SC−59 (Pb−Free) 8D 10 47 3000/Tape & Reel SC−59 8E 10 ∞ 3000/Tape & Reel SC−59 (Pb−Free) 8E 10 ∞ 3000/Tape & Reel SC−59 8F 4.7 ∞ 3000/Tape & Reel SC−59 (Pb−Free) 8F 4.7 ∞ 3000/Tape & Reel MUN2230T1 (Note 3) SC−59 8G 1.0 1.0 3000/Tape & Reel MUN2231T1 (Note 3) SC−59 8H 2.2 2.2 3000/Tape & Reel MUN2232T1 (Note 3) SC−59 8J 4.7 4.7 3000/Tape & Reel SC−59 (Pb−Free) 8J 4.7 4.7 3000/Tape & Reel SC−59 8K 4.7 47 3000/Tape & Reel SC−59 (Pb−Free) 8K 4.7 47 3000/Tape & Reel MUN2234T1 (Note 3) SC−59 8L 22 47 3000/Tape & Reel MUN2236T1 SC−59 8N 100 100 3000/Tape & Reel MUN2237T1 SC−59 8P 47 22 3000/Tape & Reel SC−59 (Pb−Free) 8P 47 22 3000/Tape & Reel MUN2240T1 (Note 3) SC−59 8T 47 ∞ 3000/Tape & Reel MUN2241T1 (Note 3) SC−59 8U 100 ∞ 3000/Tape & Reel Device MUN2211T1 MUN2211T1G MUN2212T1 MUN2212T1G MUN2213T1 MUN2213T1G MUN2214T1 MUN2214T1G MUN2215T1 (Note 3) MUN2215T1G (Note 3) MUN2216T1 (Note 3) MUN2216T1G (Note 3) MUN2232T1G (Note 3) MUN2233T1 (Note 3) MUN2233T1G (Note 3) MUN2237T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 − − − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Characteristic OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1 (IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/ MUN2232T1/MUN2233T1/MUN2234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, (VCC = 5.0 V, (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) VB = 4.0 V, RL = 1.0 kW) VB = 5.0 V, RL = 1.0 kW) MUN2211T1 MUN2212T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2213T1 MUN2240T1 MUN2236T1 MUN2237T1 MUN2241T1 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 VOL Vdc Vdc MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 70 32.9 32.9 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 100 47 47 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 130 61.1 61.1 100 kW R1/R2 0.8 1.0 1.2 0.17 − 0.21 − 0.25 − 0.8 0.055 0.38 1.7 1.0 0.1 0.47 2.1 1.2 0.185 0.56 2.6 ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MUN2230T1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN2215T1 MUN2216T1 MUN2233T1 MUN2240T1 Input Resistor Resistor Ratio MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2235T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 MUN2211T1/MUN2212T1/MUN2213T1/ MUN2236T1 MUN2214T1 MUN2215T1/MUN2216T1/MUN2240T1/ MUN2241T1 MUN2230T1/MUN2231T1/MUN2232T1 MUN2233T1 MUN2234T1 MUN2237T1 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 −50 RqJA = 370°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 4 150 MUN2211T1 Series 1 1000 IC/IB = 10 VCE = 10 V TA=−25°C 25°C 75°C 0.1 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2211T1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 1 0.1 0.01 VO = 5 V 0.001 50 TA=−25°C 10 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) TA=−25°C VO = 0.2 V 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance 10 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 10 MUN2211T1 Series 1000 1 IC/IB = 10 VCE = 10 V TA=−25°C TA=75°C 25°C 25°C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2212T1 75°C 0.1 −25°C 100 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 2 1 0 0 10 20 30 40 25°C TA=−25°C 10 1 0.1 0.01 0.001 50 75°C VO = 5 V 2 0 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) C ob, CAPACITANCE (pF) 4 3 100 TA=−25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 50 MUN2211T1 Series 10 1000 TA=−25°C IC/IB = 10 25°C 1 VCE = 10 V hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2213T1 75°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 80 10 1 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0 25°C 75°C TA=−25°C 10 1 0.1 0.01 0.2 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 14. Output Capacitance 100 V in , INPUT VOLTAGE (VOLTS) C ob, CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25°C 0.8 100 IC, COLLECTOR CURRENT (mA) VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25°C 75°C 1 0 10 10 Figure 15. Output Current versus Input Voltage TA=−25°C 0.1 8 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MUN2211T1 Series 1 300 TA=−25°C IC/IB = 10 25°C TA=75°C VCE = 10 250 25°C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2214T1 0.1 200 75°C −25°C 150 0.01 100 50 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC 100 75°C 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 25°C TA=−25°C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) TA=−25°C VO= 0.2 V 25°C 75°C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 50 MUN2211T1 Series 1 1000 VCE = 10 V IC/IB = 10 TA = −25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2236T1 25°C 75°C 0.1 0.01 75°C TA = −25°C 100 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 10 40 0.1 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C TA = −25°C 10 25°C 1 0.1 45 Figure 24. Output Capacitance VO = 5 V 0 VO = 0.2 V 5 10 15 20 25 30 Vin, INPUT VOLTAGE (VOLTS) 25°C TA = −25°C 75°C 10 1 0.1 0 5 35 40 Figure 25. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) f = 1 MHz lE = 0 V TA = 25°C 4 100 Figure 23. DC Current Gain 5 4.5 25°C 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 Figure 26. Input Voltage versus Output Current http://onsemi.com 9 35 MUN2211T1 Series 1 1000 VCE = 10 V IC/IB = 10 75°C TA = −25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2237T1 25°C 75°C 0.1 0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) TA = −25°C 100 35 10 1 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 1.6 1.4 1.2 1 0.8 0.6 f = 1 MHz lE = 0 V TA = 25°C 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 29. Output Capacitance 75°C TA = −25°C 10 25°C 1 0.1 0.01 0.001 VO = 5 V 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 25°C 75°C 10 1 0 5 14 16 Figure 30. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.8 0.2 0 100 Figure 28. DC Current Gain 2 0.4 25°C 10 15 20 25 30 IC, COLLECTOR CURRENT (mA) 35 Figure 31. Input Voltage versus Output Current http://onsemi.com 10 40 MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source http://onsemi.com 11 MUN2211T1 Series PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE F A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. L 3 S 2 DIM A B C D G H J K L S B 1 D G J C INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0034 0.0070 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K H MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.09 0.18 0.20 0.60 1.25 1.65 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches 0.8 0.031 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 12 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MUN2211T1/D