Bourns BDV64C Pnp silicon power darlington Datasheet

BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
●
125 W at 25°C Case Temperature
●
12 A Continuous Collector Current
●
Minimum hFE of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
BDV64B
Collector-emitter voltage (IB = 0)
V CBO
-120
BDV64
-60
BDV64B
VCEO
Continuous collector current
-80
-100
V
V
-120
BDV64C
Emitter-base voltage
-80
-100
BDV64C
BDV64A
UNIT
-60
BDV64
BDV64A
VALUE
VEBO
-5
V
IC
-12
A
ICM
-15
A
IB
-0.5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
°C
Peak collector current (see Note 1)
Continuous base current
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BDV64
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE
VEC
Collector-emitter
MAX
BDV64A
-80
BDV64B
-100
BDV64C
-120
IC = -30 mA
IB = 0
VCB = -30 V
IB = 0
BDV64
-2
Collector-emitter
VCB = -40 V
IB = 0
BDV64A
-2
cut-off current
VCB = -50 V
IB = 0
BDV64B
-2
breakdown voltage
(see Note 4)
TYP
V
mA
VCB = -60 V
IB = 0
BDV64C
VCB = -60 V
IE = 0
BDV64
-0.4
VCB = -80 V
IE = 0
BDV64A
-0.4
VCB = -100 V
IE = 0
BDV64B
-0.4
Collector cut-off
VCB = -120 V
IE = 0
BDV64C
-0.4
current
VCB = -30 V
IE = 0
TC = 150°C
BDV64
-2
VCB = -40 V
IE = 0
TC = 150°C
BDV64A
-2
VCB = -50 V
IE = 0
TC = 150°C
BDV64B
-2
VCB = -60 V
IE = 0
TC = 150°C
BDV64C
-2
VEB =
-5 V
IC = 0
VCE =
-4 V
IC = -5 A
(see Notes 4 and 5)
-20 mA
IC = -5 A
-4 V
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IB =
VCE =
IE =
-10 A
UNIT
-60
-2
mA
-5
mA
(see Notes 4 and 5)
-2
V
IC = -5 A
(see Notes 4 and 5)
-2.5
V
IB = 0
(see Notes 4 and 5)
-3.5
V
1000
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
2
TYP
MAX
UNIT
1
°C/W
35.7
°C/W
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS145AD
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
1000
VCE = -4 V
tp = 300 µs, duty cycle < 2%
100
-0·5
-1·0
-10
TCS145AE
-2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
-0·5
-20
TC = -40°C
TC = 25°C
TC = 100°C
0
-0·5
-1·0
IC - Collector Current - A
-10
-20
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS145AF
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
TC = -40°C
TC = 25°C
-2·5 TC = 100°C
-2·0
-1·0
-1·5
-0·5
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0
-0·5
-1·0
-10
-20
IC - Collector Current - A
Figure 3.
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS140AA
Ptot - Maximum Power Dissipation - W
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
4
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
15,2
14,7
ø 4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MDXXAW
5
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