IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS®-T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 3.5 mW ID 120 A Features • N-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB120N10S4-03 PG-TO263-3-2 4N1003 IPI120N10S4-03 PG-TO262-3-1 4N1003 IPP120N10S4-03 PG-TO220-3-1 4N1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V1) 120 T C=100°C, V GS=10V2) 120 Unit A Pulsed drain current2) I D,pulse T C=25°C 480 Avalanche energy, single pulse2) E AS I D=60A 770 mJ Avalanche current, single pulse I AS - 120 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 250 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-06-30 IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.6 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=180µA 2.0 2.7 3.5 Zero gate voltage drain current I DSS V DS=100V, V GS=0V - 0.1 1 T j=125°C2) - 10 100 V DS=100V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 3.4 3.9 mW V GS=10V, I D=100A, SMD version - 3.0 3.5 Rev. 1.0 page 2 2014-06-30 IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 Parameter Symbol Values Conditions Unit min. typ. max. - 7780 10120 pF - 2460 3200 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 150 300 Turn-on delay time t d(on) - 20 - Rise time tr - 10 - Turn-off delay time t d(off) - 45 - Fall time tf - 40 - Gate to source charge Q gs - 36 47 Gate to drain charge Q gd - 21 42 Gate charge total Qg - 108 140 Gate plateau voltage V plateau - 4.7 - V - - 120 A - - 480 V GS=0V, V DS=25V, f =1MHz V DD=50V, V GS=10V, I D=120A, R G=3.5W ns Gate Charge Characteristics2) V DD=80V, I D=120A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C - 1.0 1.3 V Reverse recovery time2) t rr V R=50V, I F=50A, di F/dt =100A/µs - 80 - ns Reverse recovery charge2) Q rr - 170 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 0.6K/W the chip is able to carry 186A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-06-30 IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V; SMD 300 140 120 250 100 80 ID [A] Ptot [W] 200 150 60 100 40 50 20 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 1 ms 100 µs 100 100 ID [A] ZthJC [K/W] 0.5 10-1 0.1 0.05 10 0.01 10-2 single pulse 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-06-30 IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 480 10 10 V 7V 5.5 V 5V 6V 6V 360 8 RDS(on) [mW] ID [A] 5.5 V 240 6 5V 120 4 7V 10 V 0 2 0 1 2 3 4 5 0 120 240 VDS [V] 360 480 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD parameter: T j 480 7 -55 °C 25 °C 6 175 °C RDS(on) [mW] ID [A] 360 240 5 4 120 3 0 3 4 5 6 7 VGS [V] Rev. 1.0 2 -60 -20 20 60 100 140 180 Tj [°C] page 5 2014-06-30 IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 Coss 103 C [pF] VGS(th) [V] 3 1800 µA 2.5 180 µA Crss 102 2 1.5 101 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics I F = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 175 175 °C °C IAV [A] IF [A] 25 °C 25 °C 150 °C 101 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 100 °C 1 1 10 100 1000 tAV [µs] page 6 2014-06-30 IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 110 2000 108 106 1500 30 A EAS [mJ] VBR(DSS) [V] 104 1000 102 100 60 A 98 500 120 A 96 94 0 25 75 125 -55 175 -15 Tj [°C] 25 65 105 145 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 120 A pulsed parameter: V DD 10 V GS 20 V 9 Qg 80 V 8 7 VGS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw Q gate 1 Q gs 0 0 20 40 60 80 100 Q gd 120 Qgate [nC] Rev. 1.0 page 7 2014-06-30 IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-06-30 IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 Revision History Version Date Changes Revision 1.0 Rev. 1.0 30.06.2014 Data Sheet Revision 1.0 page 9 2014-06-30