AP4804MT Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 ▼ Simple Drive Requirement ▼ Easy for Synchronous Buck CH-1 G1 Converter Application ▼ RoHS Compliant & Halogen-Free D2/S1 CH-2 G2 Description S2 AP4804 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. BVDSS 40V RDS(ON) 12.5mΩ ID BVDSS RDS(ON) ID 36A 40V 8mΩ 55A G2 S2 S2 S2 G1 D1 D1 D1 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) . Symbol Parameter Units Rating CH-1 CH-2 VDS Drain-Source Voltage 40 40 V VGS Gate-Source Voltage +20 +20 V ID@TC=25℃ Drain Current (Chip Limited) ID@TA=25℃ ID@TA=70℃ 36 55 A Drain Current, VGS @ 10V 3 11.8 16.9 A Drain Current, VGS @ 10V 3 7 10 A 30 40 A 3.13 3.9 W 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rating Parameter CH-1 CH-2 Units Rthj-c Maximum Thermal Resistance, Junction-case 4.2 3 ℃/W Rthj-a 3 40 32 ℃/W 4 70 60 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-ambient 1 201710162 AP4804MT o CH-1 Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=10A - - 12.5 mΩ VGS=4.5V, ID=6A - - 20 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=10A - 30 - S IDSS Drain-Source Leakage Current VDS=32V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=6A - 8 12.8 nC Qgs Gate-Source Charge VDS=20V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time VDS=20V - 4.5 - ns tr Rise Time ID=1A - 19 - ns td(off) Turn-off Delay Time RG=3.3Ω - 18 - ns tf Fall Time VGS=10V - 20 - ns Ciss Input Capacitance VGS=0V - 610 980 pF Coss Output Capacitance VDS=15V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF Rg Gate Resistance f=1.0MHz - 2.1 4.2 Ω Min. Typ. IS=10A, VGS=0V - - 1.2 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 5 - nC 2 AP4804MT o CH-2 Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 40 - - V VGS=10V, ID=12A - - 8 mΩ VGS=4.5V, ID=8A - - 10.5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=12A - 50 - S IDSS Drain-Source Leakage Current VDS=32V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=8A - 14 22 nC Qgs Gate-Source Charge VDS=20V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 8 - nC td(on) Turn-on Delay Time VDS=20V - 7 - ns tr Rise Time ID=1A - 19 - ns td(off) Turn-off Delay Time RG=3.3Ω - 26 - ns tf Fall Time VGS=10V - 23 - ns Ciss Input Capacitance VGS=0V - 1065 1700 pF Coss Output Capacitance VDS=15V Crss Rg - 300 - pF Reverse Transfer Capacitance . f=1.0MHz - 155 - pF Gate Resistance f=1.0MHz - 1 2 Ω Min. Typ. IS=12A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=12A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec. 2 4.Surface mounted on 1 in copper pad of FR4 board, on steady-state THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4804MT Channel-1 30 30 10V 7.0V 6.0V 5.0V ID , Drain Current (A) V G = 4.0V 20 10V 7.0V 6.0V 5.0V o T A =150 C ID , Drain Current (A) o T A =25 C 10 0 V G =4.0V 20 10 0 0 1 2 3 4 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 16 I D =10A V G =10V I D =6A RDS(ON) (mΩ) 14 . Normalized RDS(ON) T A =25 o C 1.6 1.2 12 0.8 0.4 10 2 4 6 8 -100 10 -50 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 2.0 8 1.6 Normalized VGS(th) I D =250uA 6 IS(A) T j =150 o C T j =25 o C 4 2 1.2 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -100 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4804MT Channel-1 8 f=1.0MHz 800 6 600 C iss C (pF) VGS , Gate to Source Voltage (V) I D =6A V DS =20V 4 2 400 200 C oss C rss 0 0 0 2 4 6 8 10 12 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 33 37 41 45 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Operation in this area limited by RDS(ON) ID (A) 10 100us 1 1ms 10ms 100ms 1s DC 0.1 T A =25 o C Single Pulse . Normalized Thermal Response (Rthja) 1 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x R thja + T a Rthja=70 oC/W 0.01 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =5V VG ID , Drain Current (A) 40 QG 4.5V 30 QGS QGD T j =150 o C 20 o T j =25 C 10 Charge T j = -55 o C Q 0 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5 AP4804MT Channel-2 40 30 10V 7.0V 6.0V 5.0V V G =4.0V 30 10V 7.0V 6.0V 5.0V V G =4.0V T A =150 o C ID , Drain Current (A) ID , Drain Current (A) T A =25 o C 20 20 10 10 0 0 0 1 2 3 4 0 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 10 I D =12A V G =10V I D =8A 8 . Normalized RDS(ON) T A =25 o C RDS(ON) (mΩ) 1 V DS , Drain-to-Source Voltage (V) 1.6 1.2 0.8 0.4 6 2 4 6 8 -100 10 -50 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 12 2.0 I D =250uA 10 Normalized VGS(th) 1.6 IS(A) 8 T j =150 o C T j =25 o C 6 4 1.2 0.8 0.4 2 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -100 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4804MT Channel-2 8 f=1.0MHz 1600 6 1200 C iss C (pF) VGS , Gate to Source Voltage (V) I D =8A V DS =20V 4 800 400 2 C oss C rss 0 0 0 4 8 12 16 20 1 24 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 33 37 41 45 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Operation in this area limited by RDS(ON) ID (A) 10 100us 1 1ms 10ms 100ms 0.1 1s T A =25 o C Single Pulse . Normalized Thermal Response (Rthja) 1 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x R thja + T a Rthja=60 oC/W Single Pulse DC 0.01 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 60 V DS =5V VG ID , Drain Current (A) 50 QG 40 4.5V 30 QGS QGD o T j =150 C 20 o T j =25 C 10 Charge T j = -55 o C Q 0 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7 AP4804MT MARKING INFORMATION Part Number 4804MT YWWSSS Package Code : MT Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 8