ne. ,O 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP - MJ15023, MJ15025* 'MJ15025 is a Preferred Device Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100% Tested) -2 A @ 80 V • High DC Current Gain - h FE = 15 (Min) @ Ic = 8 Adc 16 AMPERES SILICON POWER TRANSISTORS 200 - 250 VOLTS, 250 WATTS • Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJ15023 MJ 15025 Collector- Base Voltage MJ 15023 MJ 15025 VCEO VCBO Value Unit Vdc 200 250 Vdc 350 400 VEBO 5 Vdc VCEX 400 Vdc lc 16 30 Adc Base Current - Continuous IB 5 Adc Total Device Dissipation @ TC = 25 °C Derate above 25°C PD 250 1.43 W W/°C Tj,T stg -65 to +200 °C Symbol Max Unit Emitter-Base Voltage Collector-Emitter Voltage Collector Current - Continuous -Peak (Note 1) Operating and Storage Junction Temperature Range (TO-3) THERMAL CHARACTERISTICS Characteristics 0.70 °c/w RBJC Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. Thermal Resistance, Junction-to-Case NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders Quality Semi-Conductors PNP - MJ15023, MJ15025* ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic Symbol Min Max 200 250 - Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (lc = 100mAdc, IB = 0) VCEO(sus) MJ15023 MJ15025 Collector Cutoff Current (VCE = 200 Vdc, VBE(off) = 1 -5 Vdc) (VCE = 250 Vdc, VBE(0ff) = 1-5 Vdc) MJ15023 MJ15025 Collector Cutoff Current (VCE = 1 50 Vdc, IB = 0) (VCE = 200 Vdc, IB = 0) MJ15023 M J 1 5025 Emitter Cutoff Current (VCE = 5 Vdc, IB = 0) Both (lAdc ICEX ; 250 250 jiAdc •CEO - IEBO 500 500 ~ 500 5 2 - 15 60 - liAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 0.5 s (non-repetitive)) (VCE = 80 Vdc, t = 0.5 s (non-repetitive)) Adc Is/b ON CHARACTERISTICS DC Current Gain (lc = 8 Adc, VCE = 4 Vdc) (lc = 16 Adc, VCE = 4 Vdc) - HFE 5 Collector-Emitter Saturation Voltage (lc = 8Adc, IB = 0.8 Adc) (lc = 16 Adc, IB = 3.2 Adc) Vdc VcE(sat) - Base- Emitter On Voltage (lc = 8 Adc, VCE = 4 Vdc) - 1.4 4.0 VBE(on) - 2.2 Vdc IT 4 - MHz C0b — 600 PF DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (lc = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (V C B =10Vdc, lE = 0,f,est = 1 MHz) 2. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%. 100 i—i t' r c = 25 There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate lc - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on T J(pk) = 200°C; Tc is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. - i 20 x V I o IC.COLLECTORCURF —"• en &« ^= --- o p —•• ro o \ 0.1 BONDING WIRE LIMITED FHERMAL LIMITATION \ SINGLE PULSE) SECOND BREAKDOWN JMIT pn I II 0.2 0.5 10 II II 20 50 100 \— \C 250 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active-Region Safe Operating Area 1k