ON NSBC123JPDXV6T5G Complementary bias resistor transistor Datasheet

MUN5335DW1,
NSBC123JPDXV6,
NSBC123JPDP6
Complementary Bias
Resistor Transistors
R1 = 2.2 kW, R2 = 47 kW
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NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
PIN CONNECTIONS
(3)
(2)
R1
Q2
R2
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
R2
Q1
Features
•
•
•
•
(1)
(4)
R1
(5)
(6)
MARKING DIAGRAMS
6
SOT−363
CASE 419B
35 M G
G
1
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Max
Unit
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Rating
Collector Current − Continuous
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Package
Shipping†
MUN5335DW1T1G,
SMUN5335DW1T1G
SOT−363
3,000/Tape & Reel
MUN5335DW1T2G,
SMUN5335DW1T2G
SOT−363
3,000/Tape & Reel
NSBC123JPDXV6T1G,
NSVBC123JPDXV6T1G*
SOT−563
4,000/Tape & Reel
NSBC123JPDXV6T5G
SOT−563
8,000/Tape & Reel
NSBC123JPDP6T5G
SOT−963
8,000/Tape & Reel
Device
SOT−563
CASE 463A
1
SOT−963
CASE 527AD
35/D
M
G
35 M G
G
D
Symbol
Collector-Base Voltage
1
MG
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 3
1
Publication Order Number:
DTC123JP/D
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
187
256
1.5
2.0
mW
MUN5335DW1 (SOT−363) ONE JUNCTION HEATED
PD
Total Device Dissipation
(Note 1)
TA = 25°C
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
mW/°C
670
490
°C/W
250
385
2.0
3.0
mW
MUN5335DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
PD
Total Device Dissipation
(Note 1)
TA = 25°C
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 2)
RqJA
(Note 1)
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
TJ, Tstg
493
325
188
208
mW/°C
°C/W
°C/W
−55 to +150
°C
357
2.9
mW
mW/°C
NSBC123JPDXV6 (SOT−563) ONE JUNCTION HEATED
PD
Total Device Dissipation
(Note 1)
TA = 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
RqJA
(Note 1)
350
°C/W
NSBC123JPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
PD
Total Device Dissipation
(Note 1)
TA = 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
RqJA
(Note 1)
Junction and Storage Temperature Range
TJ, Tstg
500
4.0
250
mW
mW/°C
°C/W
−55 to +150
°C
231
269
1.9
2.2
MW
NSBC123JPDP6 (SOT−963) ONE JUNCTION HEATED
PD
Total Device Dissipation
(Note 4)
TA = 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
RqJA
(Note 4)
540
464
mW/°C
°C/W
NSBC123JPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
PD
Total Device Dissipation
(Note 4)
TA = 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
RqJA
(Note 4)
Junction and Storage Temperature Range
1.
2.
3.
4.
5.
TJ, Tstg
FR−4 @ Minimum Pad.
FR−4 @ 1.0 × 1.0 Inch Pad.
Both junction heated values assume total power is sum of two equally powered channels.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
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2
339
408
2.7
3.3
369
306
−55 to +150
MW
mW/°C
°C/W
°C
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
−
−
100
−
−
500
−
−
0.2
50
−
−
50
−
−
80
140
−
−
−
0.25
−
−
0.6
0.6
−
−
−
−
0.8
0.8
−
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector-Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Vi(off)
Input Voltage (On)
(VCE = 0.2 V, IC = 5.0 mA) (NPN)
(VCE = 0.2 V, IC = 5.0 mA) (PNP)
Vi(on)
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
Input Resistor
R1
1.5
2.2
2.9
Resistor Ratio
R1/R2
0.038
0.047
0.056
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
PD, POWER DISSIPATION (mW)
400
350
300
250
200
(1) SOT−363; 1.0 × 1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. Copper Trace
(1) (2) (3)
150
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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3
V
Vdc
Vdc
Vdc
Vdc
kW
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5335DW1, NSBC123JPDXV6
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
100
2.4
2
1.6
1.2
0.8
0.4
0
0
10
20
30
40
10
75°C
1
TA = −25°C
0.1
0.01
0.001
50
25°C
VO = 5 V
VR, REVERSE BIAS VOLTAGE (VOLTS)
3
4
5
6
7
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
0
1
2
10
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25°C
2.8
100
Figure 3. DC Current Gain
3.6
3.2
25°C
10
1
50
TA = −25°C
75°C
1
25°C
TA = −25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
50
8
9
10
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
1000
1
IC/IB = 10
25°C
150°C
0.1
−55°C
0.01
0
30
10
20
40
IC, COLLECTOR CURRENT (mA)
100
150°C
1
50
100
10
IC, COLLECTOR CURRENT (mA)
1
1000
Figure 8. DC Current Gain
7
100
5
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25°C
6
4
3
2
1
0
10
20
30
40
150°C
1
25°C
0.1
0.01
0.001
50
−55°C
10
VO = 5 V
0
1
VR, REVERSE BIAS VOLTAGE (V)
Figure 9. Output Capacitance
2
3
Vin, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
10
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
−55°C
10
Figure 7. VCE(sat) vs. IC
0
VCE = 10 V
25°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5335DW1, NSBC123JPDXV6
25°C
1
−55°C
150°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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5
50
4
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC123JPDP6
25°C
150°C
0.1
−55°C
0.01
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
−55°C
10
1
50
100
10
IC, COLLECTOR CURRENT (mA)
1
Figure 12. VCE(sat) vs. IC
100
2
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25°C
1.6
1.2
0.8
0.4
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (V)
150°C
10
25°C
0.1
0.01
0.001
50
−55°C
1
VO = 5 V
0
Figure 14. Output Capacitance
0.5
1
1.5
2
Vin, INPUT VOLTAGE (V)
10
25°C
−55°C
1
150°C
VO = 0.2 V
0.1
0
2.5
Figure 15. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
1000
Figure 13. DC Current Gain
2.4
0
150°C
25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
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6
50
3
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC123JPDP6
25°C
150°C
0.1
−55°C
0.01
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
−55°C
10
1
50
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) vs. IC
100
5
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25°C
6
4
3
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (V)
−55°C
1
25°C
0.1
0.01
0.001
50
150°C
10
VO = 5 V
0
Figure 19. Output Capacitance
1
2
Vin, INPUT VOLTAGE (V)
Figure 20. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
100
Figure 18. DC Current Gain
7
0
150°C
25°C
10
25°C
−55°C
1
150°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage vs. Output Current
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7
50
3
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
6
5
GAGE
PLANE
4
2
L
L2
E1
E
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
H
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
ddd
TOP VIEW
A2
A
6X
ccc C
A1
SIDE VIEW
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
C
M
C A-B D
DETAIL A
SEATING
PLANE
END VIEW
c
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
8
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE G
D
−X−
6
5
1
e
2
A
4
E
−Y−
3
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
PACKAGE DIMENSIONS
SOT−963
CASE 527AD
ISSUE E
X
Y
D
6
5
4
1
2
3
HE
E
e
6X
6X
BOTTOM VIEW
DIM
A
b
C
D
E
e
HE
L
L2
C
SIDE VIEW
TOP VIEW
6X L2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
A
L
MILLIMETERS
MIN
NOM
MAX
0.34
0.37
0.40
0.10
0.15
0.20
0.07
0.12
0.17
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.95
1.00
1.05
0.19 REF
0.05
0.10
0.15
b
0.08 X Y
RECOMMENDED
MOUNTING FOOTPRINT*
6X
6X
0.35
0.20
PACKAGE
OUTLINE
1.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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DTC123JP/D