Sirectifier MBR4050PT Wide temperature range and high tjm schottky barrier rectifier Datasheet

MBR4050PT thru MBR4060PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
A
C
A
Dimensions TO-247AD
A
C
A
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
MBR4050PT
MBR4060PT
VRRM
V
50
60
VRMS
V
35
42
Symbol
VDC
V
50
60
Characteristics
Maximum DC Reverse Current
At Rated DC Blocking Voltage
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
400
A
10000
V/us
@TJ=25oC
@TJ=125oC
@TJ=25oC
@TJ=125oC
0.80
0.70
-
V
@TJ=25oC
@TJ=125oC
1.0
100
mA
Voltage Rate Of Change (Rated VR)
IR
19.81 20.32
20.80 21.46
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
VF
A
B
40
@TC=125oC
IFSM
Maximum Forward
Voltage (Note 1)
Typical Thermal Resistance (Note 2)
1.4
CJ
Typical Junction Capacitance Per Element (Note 3)
700
TJ
Operating Temperature Range
ROJC
TSTG
Inches
Min.
Max.
Unit
Maximum Average Forward Rectified Current
IF=20A
IF=20A
IF=40A
IF=40A
Millimeter
Min. Max.
Maximum Ratings
I(AV)
dv/dt
Dim.
Storage Temperature Range
o
C/W
pF
-55 to +150
o
-55 to +175
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
C
C
MBR4050PT thru MBR4060PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
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