D45H11 PNP Power Amplifier Features Description • • • • This device is designed for power amplifier, regulator, and switching circuits where speed is important. Sourced from process 5Q General-Purpose Switching Transistor Low Corrector-Emitter Saturation Voltage High-Fast Switching Speed 1 TO-220 Mark: D45H11 1. Base 2. Collector 3. Emitter Ordering Information Part Number Marking Package Packing Method D45H11 D45H11 TO-220 3L Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VCEO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range © 2007 Fairchild Semiconductor Corporation D45H11 Rev. 1.2.0 Value Unit -80 V -10 A -55 to +150 °C www.fairchildsemi.com 1 D45H11 — PNP Power Amplifier December 2013 Values are at TA = 25°C unless otherwise noted. Symbol PD Max. Unit Total Device Dissipation Parameter 60 W Derate Above 25°C 480 mW/°C RθJC Thermal Resistance, Junction to Case 2.1 °C/W RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W Note: 1. Device mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm: mounting pad for the collector lead minimum 6 cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100 mA, IB = 0 -80 V ICBO Collector Cut-Off Current VCB = -80 V, IE = 0 -10 μA IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -100 μA On Characteristics hFE DC Current Gain VCE = -1 V, IC = -2 A 60 VCE = -1 V, IC = -4 A 40 VCE(sat) Collector-Emitter Saturation Voltage IC = -8 A,IB = -0.4 A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = -8 A,IB = -0.8 A -1.5 V VBE(on) Base-Emitter On Voltage VCE = -2 V, IC = -10 mA -0.65 V -0.54 Small Signal Characteristics fT Current Gain Bandwidth Product © 2007 Fairchild Semiconductor Corporation D45H11 Rev. 1.2.0 IC = -500 mA, VCE = -10 V 40 MHz www.fairchildsemi.com 2 D45H11 — PNP Power Amplifier Thermal Characteristics(1) D45H11 — PNP Power Amplifier 200 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Performance Characteristics Vce = 5V 180 140 120 125 ºC 0.6 25 °C 80 60 0.2 - 40 °C 40 0.01 0.02 0.05 0.1 0.2 0.5 1 2 I C - COLLECTOR CURRENT (A) 5 10 VBESAT- BASE-EMITTER VOLTAGE (V) β = 10 1.4 1.2 1 - 40 ºC 0.8 25 °C 125 ºC 0.6 0.4 0.1 1 I C - COLLECTOR CURRENT (A) - 40 ºC 0 0.1 10 1.6 10 15 β = 10 1.4 1.2 1 - 40 ºC 0.8 25 °C 125 ºC 0.6 0.4 0.1 Figure 3. Base-Emitter Saturation Voltage vs. Collector Current 1 I C - COLLECTOR CURRENT (A) 10 Figure 4. Base-Emitter ON Voltage vs. Collector Current 100 V CB = 50V -Ic, Collector Current [A] ICBO- COLLECTOR CURRENT (nA) 1 I C - COLLECTOR CURRENT (A) Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 1. Typical Pulsed Current Gain vs. Collector Current 1.6 25 °C 0.4 100 VBESAT- BASE-EMITTER VOLTAGE (V) β = 10 0.8 125 °C 160 1 10 1 0.1 0.01 25 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) 100us 1ms 500us DC 0 10 Single Pulse Rthjc=2.1C/W o Ta = 25 C -1 10 150 0 10 1 2 10 10 -Vce, Collector- Emitter Voltage [V] Figure 6. Safe Operating Area TO-220 Figure 5. Collector Cut-Off Current vs. Ambient Temperature © 2007 Fairchild Semiconductor Corporation D45H11 Rev. 1.2.0 1 10 www.fairchildsemi.com 3 D45H11 — PNP Power Amplifier Typical Performance Characteristics (Continued) Figure 8. Maximum Power Dissipation vs. Ambient Temperature Figure 7. Maximum Power Dissipation vs. Case Temperature Figure 9. Thermal Response © 2007 Fairchild Semiconductor Corporation D45H11 Rev. 1.2.0 www.fairchildsemi.com 4 D45H11 — PNP Power Amplifier Physical Dimensions TO-220 Figure 10. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf. © 2007 Fairchild Semiconductor Corporation D45H11 Rev. 1.2.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ mWSaver® OptoHiT¥ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ Sync-Lock™ ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ ®* TinyBoost® TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor Corporation www.fairchildsemi.com