PD - 93935B
IRFR3708
IRFU3708
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l
l
High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
VDSS
RDS(on) max
ID
30V
12.5mΩ
61A
High Frequency Buck Converters for
Computer Processor Power
Benefits
l
Ultra-Low Gate Impedance
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Very Low RDS(on) at 4.5V VGS
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Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3708
I-Pak
IRFU3708
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
± 12
61
51
244
87
61
0.58
-55 to + 175
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
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Typ.
Max.
Units
–––
–––
–––
1.73
50
110
°C/W
1
8/22/00
IRFR/U3708
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.028
8.5
10.0
15.0
–––
–––
–––
–––
–––
Max. Units
––– V
––– V/°C
12.5
14.0 mΩ
30.0
2.0
V
20
µA
100
200
nA
-200
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VGS = 2.8V, ID = 7.5A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
49
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
24
6.7
5.8
14
7.2
50
17.6
3.7
2417
707
52
Max. Units
Conditions
–––
S
VDS = 15V, ID = 50A
–––
ID = 24.8A
–––
nC
VDS = 15V
–––
VGS = 4.5V
21
VGS = 0V, ID = 24.8A, VDS = 15V
–––
VDD = 15V
–––
ID = 24.8A
ns
–––
RG = 0.6Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
213
62
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
61
–––
–––
244
––– 0.88
––– 0.80
––– 41
––– 64
––– 43
––– 70
1.3
–––
62
96
65
105
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = 31A, VGS = 0V
TJ = 125°C, IS = 31A, VGS = 0V
TJ = 25°C, IF = 31A, VR=20V
di/dt = 100A/µs
TJ = 125°C, IF = 31A, VR=20V
di/dt = 100A/µs
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IRFR/U3708
1000
VGS
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
2.7V
10
VGS
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
2.7V
10
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 175 ° C
V DS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
10
2.0
10
100
Fig 2. Typical Output Characteristics
1000
100
1
VDS, Drain-to-Source Voltage (V)
ID = 61A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U3708
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
2800
C, Capacitance (pF)
Ciss
2100
1400
C
oss
700
10
VGS , Gate-to-Source Voltage (V)
3500
C
rss
0
1
10
ID = 24.8A
VDS = 15V
8
6
4
2
0
100
0
VDS , Drain-to-Source Voltage (V)
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
TJ = 175 ° C
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
DS(on)
100
TJ = 25 ° C
10
1
00us
1
ms
10
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1
0us
2.6
1
0ms
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U3708
RD
VDS
70
LIMITED BY PACKAGE
VGS
60
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
50
10V
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3708
(
RDS(on), Drain-to -Source On Resistance Ω)
RDS ( on ) , Drain-to-Source On Resistance (Ω )
0.025
0.020
0.015
VGS = 4.5V
0.010
VGS = 10V
0.005
0
50
100
150
200
250
0.017
0.015
0.013
0.011
ID = 31A
0.009
0.007
2.0
300
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3µF
D.U.T.
+
V
- DS
QGD
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Gate Charge Test Circuit
and Waveform
15V
V (B R )D S S
tp
L
VD S
D.U .T
RG
IA S
20 V
tp
IAS
DRIVER
+
- VD D
0.0 1 Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2µF
12V
A
ID
10A
20.7A
BOTTOM 24.8A
TOP
480
360
240
120
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRFR/U3708
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
6 .7 3 (.2 6 5 )
6 .3 5 (.2 5 0 )
-A 1 .2 7 (.0 5 0 )
0 .8 8 (.0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
1 .1 4 (.0 4 5 )
0 .8 9 (.0 3 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 (.2 4 5 )
5 .9 7 (.2 3 5 )
1.0 2 (.0 4 0 )
1.6 4 (.0 2 5 )
1 0 .4 2 (.4 1 0 )
9 .4 0 (.3 7 0 )
1
2
1 - GATE
0 .5 1 (.0 2 0 )
M IN .
-B 1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
3X
2X
1 .1 4 (.0 4 5 )
0 .7 6 (.0 3 0 )
L E A D A S S IG N M E N T S
3
0 .8 9 (.0 3 5 )
0 .6 4 (.0 2 5 )
0 .2 5 ( .0 1 0 )
2 - D R A IN
3 - S OU R CE
4 - D R A IN
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
M A M B
N O TE S :
2 .2 8 ( .0 9 0 )
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
4 .5 7 ( .1 8 0 )
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) .
D-Pak (TO-252AA) Part Marking Information
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7
IRFR/U3708
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.26 5 )
6 .3 5 (.25 0 )
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
-A 1 .2 7 ( .0 5 0 )
0 .8 8 ( .0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
L E A D A S S IG N M E N T S
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 ( .2 4 5 )
5 .9 7 ( .2 3 5 )
1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
1
2
2.2 8 (.0 9 0)
1.9 1 (.0 7 5)
1 .1 4 (.0 45 )
0 .7 6 (.0 30 )
2 .28 (.0 9 0 )
2X
3 - SOURCE
4 - D R A IN
3
-B -
3X
1 - GATE
2 - D R A IN
3X
9 .6 5 ( .3 8 0 )
8 .8 9 ( .3 5 0 )
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ).
0 .8 9 (.0 35 )
0 .6 4 (.0 25 )
1 .1 4 ( .0 4 5 )
0 .8 9 ( .0 3 5 )
0 .2 5 (.0 1 0 )
M A M B
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
I-Pak (TO-251AA) Part Marking Information
8
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IRFR/U3708
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TR L
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
1 2 .1 ( .4 7 6 )
1 1 .9 ( .4 6 9 )
FE E D D IR E C TIO N
1 6 .3 ( .64 1 )
1 5 .7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
FE E D D IR E C T IO N
N O T ES :
1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET E R .
2 . AL L D IM EN SIO N S AR E SH O W N IN M IL L IM ET E R S ( IN C H E S ).
3 . O U TL IN E C O N F O R M S T O E IA -4 81 & E IA -54 1 .
1 3 IN C H
16 m m
N O T ES :
1 . O U TL IN E C O N F O R M S T O E IA-4 8 1 .
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.7 mH
RG = 25Ω, IAS = 24.8 A.
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Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
9