BZX84B4V7LT1, BZX84C2V4LT1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com 3 Cathode 1 Anode Features • • • • • • • 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 KV) per Human Body Model Tight Tolerance Series Available (See Page 4) Pb−Free Packages are Available MARKING DIAGRAM 3 1 2 Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 SOT−23 CASE 318 STYLE 8 xxx M G G 1 xxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION MAXIMUM RATINGS Rating Symbol Total Power Dissipation on FR−5 Board, (Note 1) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA Total Power Dissipation on Alumina Substrate, (Note 2) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient RqJA Junction and Storage Temperature Range TJ, Tstg Max Unit 225 1.8 556 mW mW/°C °C/W Package Shipping † SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel BZX84BxxxLT3 SOT−23 10,000/Tape & Reel BZX84BxxxLT3G SOT−23 10,000/Tape & Reel (Pb−Free) Device BZX84CxxxLT1 BZX84CxxxLT1G BZX84CxxxLT3 PD 300 2.4 417 mW mW/°C °C/W −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. BZX84CxxxLT3G BZX84BxxxLT1 BZX84BxxxLT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 11 1 Publication Order Number: BZX84C2V4LT1/D BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF QVZ C IF VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @ VR = 0 and f = 1 MHz http://onsemi.com 2 V BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA BZX84C2V4LT1, G Z11 2.2 2.4 2.6 BZX84C2V7LT1, G Z12 2.5 2.7 2.9 BZX84C3V0LT1, G Z13 2.8 3 BZX84C3V3LT1, G Z14 3.1 BZX84C3V6LT1, G Z15 3.4 BZX84C3V9LT1, G Z16 BZX84C4V3LT1, G BZX84C4V7LT1, G VZ2 (V) @ IZT2 = 1 mA (Note 3) Min Max ZZT2 (W) @ IZT2 = 1 mA 100 1.7 2.1 100 1.9 2.4 3.2 95 2.1 3.3 3.5 95 3.6 3.8 90 3.7 3.9 4.1 W9 4 4.3 Z1 4.4 4.7 BZX84C5V1LT1, G Z2 4.8 BZX84C5V6LT1, G Z3 5.2 BZX84C6V2LT1, G Z4 BZX84C6V8LT1, G BZX84C7V5LT1, G VZ3 (V) @ IZT3 = 20 mA (Note 3) Max Reverse Leakage Current Min Max ZZT3 (W) @ IZT3 = 20 mA 600 2.6 3.2 50 50 600 3 3.6 50 20 2.7 600 3.3 3.9 50 2.3 2.9 600 3.6 4.2 2.7 3.3 600 3.9 4.5 90 2.9 3.5 600 4.1 4.6 90 3.3 4 600 5 80 3.7 4.7 500 5.1 5.4 60 4.2 5.3 5.6 6 40 4.8 6 5.8 6.2 6.6 10 5.6 Z5 6.4 6.8 7.2 15 Z6 7 7.5 7.9 15 BZX84C8V2LT1, G Z7 7.7 8.2 8.7 BZX84C9V1LT1, G Z8 8.5 9.1 BZX84C10LT1, G Z9 9.4 10 BZX84C11LT1, G Y1 10.4 11 BZX84C12LT1, G Y2 11.4 BZX84C13LT1, G Y3 12.4 BZX84C15LT1, G Y4 BZX84C16LT1, G BZX84C18LT1, G qVZ (mV/k) @ IZT1 = 5 mA Min Max C (pF) @ VR = 0 f = 1 MHz 1 −3.5 0 450 1 −3.5 0 450 10 1 −3.5 0 450 40 5 1 −3.5 0 450 40 5 1 −3.5 0 450 4.7 30 3 1 −3.5 −2.5 450 4.4 5.1 30 3 1 −3.5 0 450 4.5 5.4 15 3 2 −3.5 0.2 260 480 5 5.9 15 2 2 −2.7 1.2 225 400 5.2 6.3 10 1 2 −2.0 2.5 200 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 BZX84C20LT1, G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 BZX84C22LT1, G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 BZX84C24LT1, G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 Device* VZ1 Below @ IZT1 = 2 mA VZ2 Below @ IZT2 = 0.1 mA VZ3 Below @ IZT3 = 10 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA Min Max ZZT3 Below @ IZT3 = 10 mA BZX84C27LT1, G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 BZX84C30LT1, G Y11 28 30 32 80 27.8 32 300 28.1 32.4 BZX84C33LT1, G Y12 31 33 35 80 30.8 35 325 31.1 BZX84C36LT1, G Y13 34 36 38 90 33.8 38 350 34.1 BZX84C39LT1, G Y14 37 39 41 130 36.7 41 350 BZX84C43LT1, G Y15 40 43 46 150 39.7 46 BZX84C47LT1, G Y16 44 47 50 170 43.7 50 BZX84C51LT1, G Y17 48 51 54 180 47.6 BZX84C56LT1, G Y18 52 56 60 200 51.5 BZX84C62LT1, G Y19 58 62 66 215 BZX84C68LT1, G Y20 64 68 72 BZX84C75LT1, G Y21 70 75 79 Device IR mA VR @ Volts Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA VR (V) Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 18.9 21.4 25.3 70 50 0.05 21 24.4 29.4 70 35.4 55 0.05 23.1 27.4 33.4 70 38.4 60 0.05 25.2 30.4 37.4 70 37.1 41.5 70 0.05 27.3 33.4 41.2 45 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 3 IR mA @ BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ (Volts) @ IZT = 5 mA (Note 4) IR mA qVZ (mV/k) @ IZT = 5 mA Volts Min Max C (pF) @ VR =0, f = 1 MHz 3 2 −3.5 0.2 260 2 2 −2.7 1.2 225 40 1 2 −2 2.5 200 6.32 10 3 4 0.4 3.7 185 6.94 15 2 4 1.2 4.5 155 7.5 7.65 15 1 5 2.5 5.3 140 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135 8.92 9.1 9.28 15 0.5 6 3.8 7 130 T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105 T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100 Device Marking Min Nom Max Max BZX84B4V7LT1, G T10 4.61 4.7 4.79 80 BZX84B5V1LT1, G T11 5.00 5.1 5.20 60 BZX84B5V6LT1, G T12 5.49 5.6 5.71 BZX84B6V2LT1, G T13 6.08 6.2 BZX84B6V8LT1, G T14 6.66 6.8 BZX84B7V5LT1, G T15 7.35 BZX84B8V2LT1, G T16 BZX84B9V1LT1, G T17 BZX84B16LT1, G BZX84B18LT1, G Device Max Reverse Leakage Current ZZT (W) @ IZT = 5 mA (Note 4) VR @ 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 4 BZX84B4V7LT1, BZX84C2V4LT1 Series 8 100 7 θ VZ , TEMPERATURE COEFFICIENT (mV/°C) θ VZ , TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 VZ @ IZT 10 2 1 0 −1 −2 −3 TYPICAL TC VALUES 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA 100 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (Ω ) 1000 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0.6 0°C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 5 1.1 1.2 BZX84B4V7LT1, BZX84C2V4LT1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (μA) TA = 25°C 100 BIAS AT 50% OF VZ NOM 10 1 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 10 1 +150°C 0.1 0.01 0.001 +25 °C 0.0001 −55 °C 0.00001 0 10 Figure 5. Typical Capacitance 100 TA = 25°C 10 1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 Figure 6. Typical Leakage Current I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 100 20 10 10 1 0.1 0.01 12 TA = 25°C 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) http://onsemi.com 6 90 BZX84B4V7LT1, BZX84C2V4LT1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 VIEW C STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 7 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BZX84C2V4LT1/D