Jiangsu BC337-40 To-92 plastic-encapsulate transistor Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40
TRANSISTOR (NPN)
TO-92
BC338, -16,-25,-40
FEATURES
Power dissipation
1. COLLECTOR
PCM:
0.625
2. BASE
W (Tamb=25℃)
3. EMITTER
Collector current
0.8
A
ICM:
Collector-base voltage
BC337 50
V
VCBO:
BC338 30
V
Operating and storage junction temperature range
1 2 3
TJ, Tstg: -55℃ to +150℃
ELECTRICAL
CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Collector-base breakdown voltage
VCBO
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Ic= 100µA, IE=0
BC337
50
V
BC338
30
V
45
V
25
V
5
V
IC= 10 mA , IB=0
Collector-emitter breakdown voltage
BC337
VCEO
BC338
Emitter-base breakdown voltage
VEBO
Collector cut-off current
ICBO
IE= 10µA, IC=0
BC337
VCB= 45 V, IE=0
0.1
µA
BC338
VCB= 25V, IE=0
0.1
µA
VCE= 40 V, IB=0
0.2
µA
VCE= 20 V, IB=0
0.2
µA
IEBO
VEB= 4 V, IC=0
0.1
µA
hFE(1)
VCE=1V, IC= 100mA
HFE(2)
VCE=1V, IC= 300mA
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50 mA
0.7
V
Base-emitter saturation voltage
VBE(sat)
IC= 500 mA, IB=50 mA
1.2
V
Collector cut-off current
BC337
ICEO
BC338
Emitter cut-off current
DC current gain
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
100
100
160
250
60
630
250
400
630
VCE= 5V, IC= 10mA
Transition frequency
fT
210
f = 100MHz
MHz
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