PRELIMINARY Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ■ Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Hardware method of locking a sector to prevent any program or erase operation within that sector — Zero latency between read and write operations — Sectors can be locked in-system or via programming equipment — Read-while-erase — Read-while-program ■ Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29DL800 device ■ High performance — Access times as fast as 70 ns ■ Low current consumption (typical values at 5 MHz) — 7 mA active read current — Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Top or bottom boot block configurations available ■ Embedded Algorithms — Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip — Embedded Program algorithm automatically programs and verifies data at specified address ■ Minimum 1,000,000 program/erase cycles guaranteed per sector ■ Package options — 21 mA active read-while-program or read-whileerase current — 44-pin SO — 17 mA active program-while-erase-suspended current — 48-ball FBGA — 200 nA in standby mode — 200 nA in automatic sleep mode — Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode ■ Flexible sector architecture — Two 16 Kword, two 8 Kword, four 4 Kword, and fourteen 32 Kword sectors in word mode — Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and fourteen 64 Kbyte sectors in byte mode — Any combination of sectors can be erased — Supports full chip erase ■ Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences — 48-pin TSOP ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard — Superior inadvertent write protection ■ Data# Polling and Toggle Bits — Provides a software method of detecting program or erase cycle completion ■ Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends or resumes erasing sectors to allow reading and programming in other sectors — No need to suspend if sector is in the other bank ■ Hardware reset pin (RESET#) — Hardware method of resetting the device to reading array data This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 21519 Rev: A Amendment/+3 Issue Date: April 1998 P R E L I M I N A R Y GENERAL DESCRIPTION The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The wordwide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7. This device requires only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device. tates faster programming times by requiring only two write cycles to program data instead of four. This device is manufactured using AMD’s 0.35 µm process technology, and offers all the features and benefits of the Am29DL800, which was manufactured using a 0.5 µm technology. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device automatically returns to reading array data. The standard device offers access times of 70, 90, and 120 ns, allowing high-speed microprocessors to operate without wait states. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into two banks. Bank 1 contains eight boot/parameter sectors, and Bank 2 consists of fourteen larger, code sectors of uniform size. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. Am29DL800B Features The device offers complete compatibility with the JEDEC single-power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facili- 2 Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector within that bank that is not selected for erasure. True background erase can thus be achieved. There is no need to suspend the erase operation if the read data is in the other bank. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device to reading array data, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability, and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte or word at a time using hot electron injection. Am29DL800B P R E L I M I N A R Y PRODUCT SELECTOR GUIDE Family Part Number Am29DL800B 70 90 120 Max Access Time (ns) 70 90 120 CE# Access (ns) 70 90 120 OE# Access (ns) 30 35 50 Speed Option Full Voltage Range: VCC = 2.7 – 3.6 V Note: See “AC Characteristics” for full specifications. BLOCK DIAGRAM RY/BY# X-Decoder A0–A18 RESET# WE# CE# BYTE# Upper Bank DQ0–DQ15 A0–A18 Y-Decoder Upper Bank Address A0–A18 Latches and Control Logic OE# BYTE# VCC VSS STATE CONTROL & COMMAND REGISTER Status DQ0–DQ15 Control Lower Bank Address Lower Bank Latches and Control Logic A0–A18 Y-Decoder A0–A18 X-Decoder DQ0–DQ15 DQ0–DQ15 OE# BYTE# 21519A-1 Am29DL800B 3 P R E L I M I N A R Y CONNECTION DIAGRAMS A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RESET# NC NC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Standard TSOP Reverse TSOP 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RESET# NC NC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 21519A-2 4 Am29DL800B P R E L I M I N A R Y CONNECTION DIAGRAMS RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 SO RESET# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC 21519A-3 FBGA Bump Side (Bottom) View A1 B1 C1 D1 E1 F1 G1 H1 A3 A4 A2 A1 A0 CE# OE# VSS A2 B2 C2 D2 E2 F2 G2 H2 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A3 B3 C3 D3 E3 F3 G3 H3 RY/BY# NC A18 NC DQ2 DQ10 DQ11 DQ3 A4 B4 C4 D4 E4 F4 G4 H4 WE# RESET# NC NC DQ5 DQ12 VCC DQ4 A5 B5 C5 D5 E5 F5 G5 H5 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 A6 B6 C6 D6 E6 F6 G6 H6 A13 A12 A14 A15 A16 Special Handling Instructions for FBGA Package Special handling is required for Flash Memory products in FBGA packages. BYTE# DQ15/A-1 VSS Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package an d/or data integr ity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. Am29DL800B 5 P R E L I M I N A R Y PIN DESCRIPTION A0-A18 LOGIC SYMBOL = 19 Addresses 19 DQ0-DQ14 = 15 Data Inputs/Outputs A0–A18 DQ15/A-1 = DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) DQ0–DQ15 (A-1) CE# = Chip Enable OE# = Output Enable CE# WE# = Write Enable OE# BYTE# = Selects 8-bit or 16-bit mode RESET# = Hardware Reset Pin, Active Low RY/BY# = Ready/Busy Output VCC = 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) VSS = Device Ground NC = Pin Not Connected Internally 6 16 or 8 WE# RESET# BYTE# RY/BY# 21519A-4 Am29DL800B P R E L I M I N A R Y ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29DL800B T 70 E C OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (–40°C to +85°C) E = Extended (–55°C to +125°C) PACKAGE TYPE E = 40-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 040) F = 40-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR040) S = 44-Pin Small Outline Package (SO 044) WB = 48-Ball Fine-Pitch Ball Grid Array (FBGA) 0.80 mm pitch, 6 x 9 mm package SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top Sector B = Bottom Sector DEVICE NUMBER/DESCRIPTION Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory 3.0 Volt-only Read, Program, and Erase Valid Combinations Valid Combinations Am29DL800BT70 Am29DL800BB70 EC, EI, FC, FI, SC, SI, WBC, WBI Am29DL800BT90 Am29DL800BB90 EC, EI, EE, FC, FI, FE, SC, SI, SE, WBC, WBI, WBE Am29DL800BT120 Am29DL800BB120 Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Am29DL800B 7 P R E L I M I N A R Y DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of Table 1. the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Am29DL800B Device Bus Operations DQ8–DQ15 Operation CE# OE# WE# RESET# Addresses (Note 1) DQ0– DQ7 BYTE# = VIH BYTE# = VIL Read L L H H AIN DOUT DOUT Write L H L H AIN DIN DIN DQ8–DQ14 = High-Z, DQ15 = A-1 VCC ± 0.3 V X X VCC ± 0.3 V X High-Z High-Z High-Z Output Disable L H H H X High-Z High-Z High-Z Reset X X X L X High-Z High-Z High-Z Sector Protect (Note 2) L H L VID Sector Address, A6 = L, A1 = H, A0 = L DIN X X Sector Unprotect (Note 2) L H L VID Sector Address, A6 = H, A1 = H, A0 = L DIN X X Temporary Sector Unprotect X X X VID AIN DIN DIN High-Z Standby Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A18:A0 in word mode (BYTE# = VIH), A18:A-1 in byte mode (BYTE# = VIL). 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Protection/Unprotection” section. Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0-15 are active and controlled by CE# and OE# . If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines whether the device outputs array data in words or bytes. 8 The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. EAch bank remains enabled for read access until the command register contents are altered. See “Reading Array Data” for more information. Refer to the AC Read-Only Operations table for timing specifications and to Figure 13 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing Am29DL800B P R E L I M I N A R Y sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “Word/Byte Configuration” for more information. The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The “Byte/Word Program Command Sequence” section has details on programming data to the device using both standard and Unlock Bypass command sequences. within the same bank (except the sector being erased). Figure 19 shows how read and write cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in the DC Characteristics table represent the current specifications for read-while-program and read-while-erase, respectively. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. An erase operation can erase one sector, multiple sectors, or the entire device. Tables 2 and 3 indicate the address space that each sector occupies. The device address space is divided into two banks: Bank 1 contains the boot/parameter sectors, and Bank 2 contains the larger, code sectors of uniform size. A “bank address” is the address bits required to uniquely select a bank. Similarly, a “sector address” is the address bits required to uniquely select a sector. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be suspended to read from or program to another location ICC3 in the DC Characteristics table represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC4 in the DC Characteristics table represents the automatic sleep mode current specification. Am29DL800B 9 P R E L I M I N A R Y RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/ write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash 10 memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Refer to the AC Characteristics tables for RESET# parameters and to Figure 14 for the timing diagram. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Am29DL800B P R E L I M I N A R Y Table 2. Am29DL800BT Top Boot Sector Architecture Sector Address Sector A18 A17 A16 A15 A14 A13 A12 Sector Size (Kbytes/ Kwords) SA0 0 0 0 0 X X X 64/32 00000h–0FFFFh 00000h–07FFFh SA1 0 0 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh SA2 0 0 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh SA3 0 0 1 1 X X X 64/32 30000h–3FFFFh 18000h–1FFFFh SA4 0 1 0 0 X X X 64/32 40000h–4FFFFh 20000h–27FFFh SA5 0 1 0 1 X X X 64/32 50000h–5FFFFh 28000h–2FFFFh SA6 0 1 1 0 X X X 64/32 60000h–6FFFFh 30000h–37FFFh SA7 0 1 1 1 X X X 64/32 70000h–7FFFFh 38000h–3FFFFh SA8 1 0 0 0 X X X 64/32 80000h–8FFFFh 40000h–47FFFh SA9 1 0 0 1 X X X 64/32 90000h–9FFFFh 48000h–4FFFFh SA10 1 0 1 0 X X X 64/32 A0000h–AFFFFh 50000h–57FFFh SA11 1 0 1 1 X X X 64/32 B0000h–BFFFFh 58000h–5FFFFh SA12 1 1 0 0 X X X 64/32 C0000h–CFFFFh 60000h–67FFFh SA13 1 1 0 1 X X X 64/32 D0000h–DFFFFh 68000h–6FFFFh SA14 1 1 1 0 0 0 X 16/8 E0000h–E3FFFh 70000h–71FFFh 0 1 X SA15 1 1 1 0 32/16 1 0 X E4000h–E7FFFh, E8000h–EBFFFh 72000h–73FFFh 74000h–75FFFh Bank Address Bank (x8) Address Range (x16) Address Range Bank 2 SA16 1 1 1 0 1 1 0 8/4 EC000h–EDFFFh 76000h–76FFFh SA17 1 1 1 0 1 1 1 8/4 EE000h–EFFFFh 77000h–77FFFh SA18 1 1 1 1 0 0 0 8/4 F0000h–F1FFFh 78000h–78FFFh SA19 1 1 1 1 0 0 1 8/4 F2000h–F3FFFh 79000h–79FFFh 0 1 X SA20 1 1 1 1 32/16 1 0 X F4000h–F7FFFh, F8000h–FBFFFh 7A000h–7BFFFh 7C000h–7DFFFh 1 1 X 16/8 FC000h–FFFFFh 7E000h–7FFFFh Bank 1 SA21 1 1 1 1 Note: The address range is A18:A-1 if in byte mode (BYTE# = VIL). The address range is A18:A0 if in word mode (BYTE# = VIH). Am29DL800B 11 P R E L I M I N A R Y Table 3. Am29DL800BB Bottom Boot Sector Architecture Sector Address Sector A18 A17 A16 A15 A14 A13 A12 Sector Size (Kbytes/ Kwords) SA21 1 1 1 1 X X X 64/32 F0000h–FFFFFh 78000h–7FFFFh SA20 1 1 1 0 X X X 64/32 E0000h–EFFFFh 70000h–77FFFh SA19 1 1 0 1 X X X 64/32 D0000h–DFFFFh 68000h–6FFFFh SA18 1 1 0 0 X X X 64/32 C0000h–CFFFFh 60000h–67FFFh SA17 1 0 1 1 X X X 64/32 B0000h–BFFFFh 58000h–5FFFFh SA16 1 0 1 0 X X X 64/32 A0000h–AFFFFh 50000h–57FFFh SA15 1 0 0 1 X X X 64/32 90000h–9FFFFh 48000h–4FFFFh SA14 1 0 0 0 X X X 64/32 80000h–8FFFFh 40000h–47FFFh SA13 0 1 1 1 X X X 64/32 70000h–7FFFFh 38000h–3FFFFh SA12 0 1 1 0 X X X 64/32 60000h–6FFFFh 30000h–37FFFh SA11 0 1 0 1 X X X 64/32 50000h–5FFFFh 28000h–2FFFFh SA10 0 1 0 0 X X X 64/32 40000h–4FFFFh 20000h–27FFFh SA9 0 0 1 1 X X X 64/32 30000h–3FFFFh 18000h–1FFFFh SA8 0 0 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh SA7 0 0 0 1 1 1 X 16/8 1C000h–1FFFFh 0E000h–0FFFFh 1 0 X SA6 0 0 0 1 32/16 0 1 X 18000h–1BFFFh 14000h–17FFFh 0C000h–0DFFFh 0A000h–0BFFFh Bank Address Bank (x8) Address Range (x16) Address Range Bank 2 SA5 0 0 0 1 0 0 1 8/4 12000h–13FFFh 09000h–09FFFh SA4 0 0 0 1 0 0 0 8/4 10000h–11FFFh 08000h–08FFFh SA3 0 0 0 0 1 1 1 8/4 0E000h–0FFFFh 07000h–07FFFh SA2 0 0 0 0 1 1 0 8/4 0C000h–0DFFFh 06000h–06FFFh 1 0 X SA1 0 0 0 0 32/16 0 1 X 08000h–0BFFFh, 04000h–07FFFh 04000h–05FFFh, 02000h–03FFFh, 0 0 X 16/8 00000h–03FFFh 00000h–01FFFh Bank 1 SA0 0 0 0 0 Note: The address range is A18:A-1 if in byte mode (BYTE# = VIL). The address range is A18:A0 if in word mode (BYTE# = VIH). Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (11.5 V to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 4. In addition, when verifying sector protection, 12 the sector address must appear on the appropriate highest order address bits (see Tables 2 and 3). Table 4 shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 5. This method does not require VID. Refer to the Autoselect Command Sequence section for more information. Am29DL800B P R E L I M I N A R Y Table 4. Description Mode Manufacturer ID: AMD Am29DL800B Autoselect Codes (High Voltage Method) CE# OE# WE# L L H L L H Device ID: Am29DL800B (Top Boot Block) Word Byte L L H Device ID: Am29DL800B (Bottom Boot Block) Word L L H A18 A11 to to A12 A10 BA BA BA Byte Sector Protection Verification L L L L A9 A8 to A7 X VID X X H H SA X A6 A5 to A2 A1 X L X VID X L X VID X VID X L L X X A0 DQ8 to DQ15 DQ7 to DQ0 L L X 01h 22h 4Ah L H X 4Ah 22h CBh X CBh X 01h (protected) X 00h (unprotected) L H H L Note: L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don’t care. Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be implemented via two methods. SET# pin to VID (11.5 V – 12.5 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 shows the algorithm, and Figure 23 shows the timing diagrams, for this feature. The primary method requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 24 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. START RESET# = VID (Note 1) The alternate method intended only for programming equipment requires VID on address pin A9 and OE#. This method is compatible with programmer routines written for earlier 3.0 volt-only AMD flash devices. Publication number 21467 contains further details; contact an AMD representative to request a copy. Perform Erase or Program Operations RESET# = VIH The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details. It is possible to determine whether a sector is protected or unprotected. See the Autoselect Mode section for details. Temporary Sector Unprotect This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RE- Temporary Sector Unprotect Completed (Note 2) 21519A-5 Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 1. Am29DL800B Temporary Sector Unprotect Operation 13 P R E L I M I N A R Y START START Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address PLSCNT = 1 RESET# = VID Wait 1 µs Temporary Sector Unprotect Mode No PLSCNT = 1 RESET# = VID Wait 1 µs No First Write Cycle = 60h? First Write Cycle = 60h? Yes Yes Set up sector address No All sectors protected? Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Wait 150 µs Increment PLSCNT Temporary Sector Unprotect Mode Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Reset PLSCNT = 1 Wait 15 ms Read from sector address with A6 = 0, A1 = 1, A0 = 0 Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 Increment PLSCNT No No PLSCNT = 25? Yes Yes No Yes Device failed Read from sector address with A6 = 1, A1 = 1, A0 = 0 Data = 01h? PLSCNT = 1000? Protect another sector? No No Data = 00h? Yes Yes Remove VID from RESET# Device failed Last sector verified? Write reset command Sector Protect Algorithm Sector Protect complete Set up next sector address No Yes Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete 21519A-6 Figure 2. 14 In-System Sector Protect/Unprotect Algorithms Am29DL800B P R E L I M I N A R Y Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 5 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during V CC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 5 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams in the AC Characteristics section. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspendread mode, after which the system can read data from any non-erase-suspended sector within the same bank. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The Read-Only Operations table provides the read parameters, and Figure 13 shows the timing diagram. Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the reading array data. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to reading array data (or erase-suspend-read mode if that bank was in Erase Suspend). Am29DL800B 15 P R E L I M I N A R Y Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. Table 5 shows the address and data requirements. This method is an alternative to that shown in Table 4, which is intended for PROM programmers and requires VID on address pin A9. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in the other bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The addressed bank then enters the autoselect mode. The system may read at any address within the same bank any number of times without initiating another autoselect command sequence: ■ A read cycle at address (BA)XX00h (where BA is the bank address) returns the manufacturer code. ■ A read cycle at address (BA)XX01h in word mode (or (BA)XX02h in byte mode) returns the device code. ■ A read cycle to an address containing a sector address (SA) within the same bank, and the address 02h on A7–A0 in word mode (or the address 04h on A6–A-1 in byte mode) returns 01h if the sector is protected, or 00h if it is unprotected. Refer to Tables 2 and 3 for valid sector addresses. The system may continue to read array data from the other bank while a bank is in the autoselect mode. To exit the autoselect mode, the system must write the reset command to return both banks to reading array data. If a bank enters the autoselect mode while erase suspended, a reset command returns that bank to the erase-suspend-read mode. A subsequent Erase Resume command returns the bank to the erase operation. Byte/Word Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 16 5 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, that bank then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Note that while the Embedded Program operation is in progress, the system can read data from the non-programming bank. Refer to the Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.” Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 5 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank address and the data 90h. The second cycle need only contain the data 00h. The bank then returns to reading array data. Am29DL800B P R E L I M I N A R Y Figure 3 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams. START Sector Erase Command Sequence Data Poll from System Verify Data? No Yes Increment Address No Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 5 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Last Address? Yes Programming Completed 21519A-7 Note: See Table 5 for program command sequence. Figure 3. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. Write Program Command Sequence Embedded Program algorithm in progress tus of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write Operation Status section for information on these status bits. Program Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 5 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to reading array data and addresses are no longer latched. The system can determine the sta- After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise the last address and command may not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets that bank to reading array data. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 (in the erasing bank) to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from Am29DL800B 17 P R E L I M I N A R Y the non-erasing bank. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to the Write Operation Status section for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. gram operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. Refer to the Write Operation Status section for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode and Autoselect Command Sequence sections for details. To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Erase Suspend/Erase Resume Commands START The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits. No Data = FFh? Yes Erasure Completed 21519A-8 Notes: 1. See Table 5 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the pro- 18 Embedded Erase algorithm in progress Am29DL800B Figure 4. Erase Operation P R E L I M I N A R Y Cycles Table 5. Command Sequence (Note 1) Read (Note 6) Reset (Note 7) Autoselect (Note 8) Manufacturer ID Word Byte Device ID, Top Boot Block Word Device ID, Bottom Boot Block Word Byte Byte Unlock Bypass RD 1 XXX F0 4 4 4 Byte Word Byte Unlock Bypass Reset (Note 11) Sector Erase 555 AAA 555 AAA 555 AAA Word Byte Word Byte AA AA AA 555 4 3 2 6 6 2AA 555 2AA 555 2AA 555 AA 555 AAA 555 AAA 55 55 55 2AA AAA Unlock Bypass Program (Note 10) 2 Chip Erase Addr Data Addr Data 4 Word Second RA Byte Program Bus Cycles (Notes 2–5) First 1 Word Sector Protect Verify (Note 9) Am29DL800B Command Definitions AA 2AA 555 2AA 555 55 55 A0 PA PD 90 XXX 00 AAA 555 AAA AA Erase Suspend (Note 12) 1 BA B0 Erase Resume (Note 13) 1 BA 30 (BA)AAA (BA)555 (BA)AAA 2AA 555 2AA 555 Data 90 (BA)X00 01 (BA)X01 224A 90 90 55 55 (BA)X02 4A (BA)X01 22CB (BA)X02 CB (SA) X02 XX00 (SA) X04 00 PA PD 90 555 AAA 555 AAA 555 AAA 555 AAA Fifth Addr (BA)AAA BA AA (BA)555 55 XXX 555 (BA)555 (BA)AAA Fourth Data (BA)555 555 AA Third Addr A0 Sixth Addr Data Addr Data XX01 01 20 80 80 555 AAA 555 AAA AA AA 2AA 555 2AA 555 55 55 555 AAA SA 10 30 Legend: X = Don’t care PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. RA = Address of the memory location to be read. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18–A12 uniquely select any sector. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. Notes: 1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except when reading array or autoselect data, all bus cycles are write operations. 4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles. 5. Address bits A18–A11 are don’t cares for unlock and command cycles, unless bank address (BA) is required. BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. Address bits A18– A16 select a bank. 8. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer or device ID information. 9. The data is 00h for an unprotected sector and 01h for a protected sector. See the Autoselect Command Sequence section for more information. 10. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 6. No unlock or command cycles required when bank is in read mode. 11. The Unlock Bypass Reset command is required to return to reading array data when the bank is in the unlock bypass mode. 7. The Reset command is required to return to reading array data (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 is goes high (while the bank is providing status information). 12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 13. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. Am29DL800B 19 P R E L I M I N A R Y WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation in the bank where a program or erase operation is in progress: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections describe the function of these bits. DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. invalid. Valid data on DQ0–DQ7 will appear on successive read cycles. Table 6 shows the outputs for Data# Polling on DQ7. Figure 5 shows the Data# Polling algorithm. Figure 20 in the AC Characteristics section shows the Data# Polling timing diagram. DQ7: Data# Polling START The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. Read DQ7–DQ0 Addr = VA During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to reading array data. DQ7 = Data? No No Read DQ7–DQ0 Addr = VA DQ7 = Data? After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the bank returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. 20 DQ5 = 1? Yes During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ0–DQ6 may be still Yes Yes No FAIL PASS 21519A-9 Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Am29DL800B Figure 5. Data# Polling Algorithm P R E L I M I N A R Y RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data, is in the standby mode, or one of the banks is in the erase-suspend-read mode. Table 6 shows the outputs for RY/BY#. DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address within the programming or erasing bank, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address within the programming or erasing bank cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When a bank is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When that bank enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 6 shows the outputs for Toggle Bit I on DQ6. Figure 6 shows the toggle bit algorithm. Figure 21 in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 6 to compare outputs for DQ2 and DQ6. Figure 6 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 21 shows the toggle bit timing diagram. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. Reading Toggle Bits DQ6/DQ2 Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not Am29DL800B 21 P R E L I M I N A R Y completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6). After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1”. If the system can guarantee the time between additional sector erase commands to be less than 50 µs, it need not monitor DQ3. See also the Sector Erase Command Sequence section. Read DQ7–DQ0 No Yes After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1”, the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0”, the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. DQ5 = 1? Yes Read DQ7–DQ0 Twice Toggle Bit = Toggle? The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1”. DQ3: Sector Erase Timer Read DQ7–DQ0 No DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. Under both these conditions, the system must write the reset command to return to reading array data (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). START Toggle Bit = Toggle? DQ5: Exceeded Timing Limits No Table 6 shows the status of DQ3 relative to the other status bits. Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for more information. Figure 6. 22 Toggle Bit Algorithm Am29DL800B P R E L I M I N A R Y Table 6. Write Operation Status DQ7 (Note 2) Status Standard Mode Embedded Program Algorithm Erase Suspend Mode Erase-SuspendRead DQ6 DQ5 (Note 1) DQ3 DQ2 (Note 2) RY/BY# DQ7# Toggle 0 N/A No toggle 0 0 Toggle 0 1 Toggle 0 Erase Suspended Sector 1 No toggle 0 N/A Toggle 1 Non-Erase Suspended Sector Data Data Data Data Data 1 DQ7# Toggle 0 N/A N/A 0 Embedded Erase Algorithm Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. Am29DL800B 23 P R E L I M I N A R Y ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied. . . . . . . . . . . . . . –65°C to +125°C 20 ns 20 ns +0.8 V Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V –0.5 V A9, OE#, and RESET# (Note 2) . . . . . . . . .–0.5 V to +12.5 V –2.0 V All other pins (Note 1) . . . . . . . . . . . . . . . . . –0.5 V to VCC+0.5 V 20 ns 21519A-11 Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 7. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8. 2. Minimum DC input voltage on pins A9, OE#, and RESET# is –0.5 V. During voltage transitions, A9, OE#, and RESET# may undershoot VSS to –2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns. Figure 7. Maximum Negative Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. OPERATING RANGES Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C Extended (E) Devices Ambient Temperature (TA) . . . . . . . . –55°C to +125°C VCC Supply Voltages VCC for full voltage range . . . . . . . . . . . . 2.7 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. 24 Am29DL800B 20 ns 20 ns 21519A-12 Figure 8. Maximum Positive Overshoot Waveform P R E L I M I N A R Y DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description Test Conditions Min ILI Input Load Current VIN = VSS to VCC, VCC = VCC max ILIT A9 Input Load Current VCC = VCC max; A9 = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max ICC1 VCC Active Read Current (Note 1) Typ Max Unit ±1.0 µA 35 µA ±1.0 µA CE# = VIL, OE# = VIH, Byte Mode 5 MHz 7 12 1 MHz 2 4 CE# = VIL, OE# = VIH, Word Mode 5 MHz 7 12 1 MHz 2 4 mA ICC2 VCC Active Write Current (Note 2) CE# = VIL, OE# = VIH, WE# = VIL 15 30 mA ICC3 VCC Standby Current (CE# Controlled) VCC = VCC max; OE# = VIL; CE#, RESET# = VCC ± 0.3 V 0.2 5 µA ICC4 VCC Reset Current (RESET# Controlled) VCC = VCC max; RESET# = VSS ± 0.3 V 0.2 5 µA ICC5 Automatic Sleep Mode (Note 3) VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V 0.2 5 µA VCC Active Read-WhileProgram Current (Notes 1, 4) CE# = VIL, OE# = VIH Byte 21 45 ICC6 Word 21 45 VCC Active Read-While-Erase Current (Notes 1, 4) CE# = VIL, OE# = VIH Byte 21 45 ICC7 Word 21 45 ICC8 VCC Active Program-WhileErase-Suspended Current (Note 4) CE# = VIL, OE# = VIH 17 35 mA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 0.7 x VCC VCC + 0.3 V VID Voltage for Autoselect and Temporary Sector Unprotect VCC = 3.0 V ± 10% 11.5 12.5 V VOL Output Low Voltage IOL = 4.0 mA, VCC = VCC min 0.45 V VOH1 Output High Voltage VOH2 VLKO mA mA IOH = –2.0 mA, VCC = VCC min 0.85 VCC V IOH = –100 µA, VCC = VCC min VCC–0.4 V Low VCC Lock-Out Voltage (Note 4) 2.3 2.5 V Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. ICC active while Embedded Erase or Embedded Program is in progress. 3. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 4. Not 100% tested. Am29DL800B 25 P R E L I M I N A R Y DC CHARACTERISTICS Zero-Power Flash Supply Current in mA 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 Time in ns Note: Addresses are switching at 1 MHz 21519A-13 Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 10 Supply Current in mA 8 3.6 V 6 2.7 V 4 2 0 1 2 3 4 5 Frequency in MHz Note: T = 25 °C 21519A-14 Figure 10. 26 Typical ICC1 vs. Frequency Am29DL800B P R E L I M I N A R Y TEST CONDITIONS Table 7. Test Specifications 3.3 V Test Condition Output Load 2.7 kΩ Device Under Test All 1 TTL gate Output Load Capacitance, CL (including jig capacitance) CL 100 pF 5 ns 0.0–3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input Rise and Fall Times 6.2 kΩ Input Pulse Levels Note: Diodes are IN3064 or equivalent Unit 21519A-15 Figure 11. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS OUTPUTS Steady Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) KS000010-PAL 3.0 V Input 1.5 V Measurement Level 1.5 V Output 0.0 V 21519A-16 Figure 12. Input Waveforms and Measurement Levels Am29DL800B 27 P R E L I M I N A R Y AC CHARACTERISTICS Read-Only Operations Parameter Speed Options JEDEC Std. Description Test Setup 70 90 120 Unit tAVAV tRC Read Cycle Time (Note 1) Min 70 80 120 ns tAVQV tACC Address to Output Delay CE#, OE# = VIL Max 70 80 120 ns tELQV tCE Chip Enable to Output Delay OE# = VIL Max 70 80 120 ns tGLQV tOE Output Enable to Output Delay Max 30 35 50 ns tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 25 30 30 ns tGHQZ tDF Output Enable to Output High Z (Note 1) Max 25 30 30 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns Read Min 0 ns tOEH Output Enable Hold Time (Note 1) Toggle and Data# Polling Min 10 ns Notes: 1. Not 100% tested. 2. See Figure 11 and Table 7 for test specifications. tRC Addresses Stable Addresses tACC CE# tRH tRH tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# 0V 21519A-17 Figure 13. 28 Read Operation Timings Am29DL800B P R E L I M I N A R Y AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description All Speed Options Unit tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) Max 20 µs tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read (See Note) Min 50 ns tRPD RESET# Low to Standby Mode Min 20 µs tRB RY/BY# Recovery Time Min 0 ns Note: Not 100% tested. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP 21519A-18 Figure 14. Reset Timings Am29DL800B 29 P R E L I M I N A R Y AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std. Description 70 90 120 5 Unit tELFL/tELFH CE# to BYTE# Switching Low or High Max ns tFLQZ BYTE# Switching Low to Output HIGH Z Max 25 30 30 ns tFHQV BYTE# Switching High to Output Active Min 70 90 120 ns CE# OE# BYTE# BYTE# Switching from word to byte mode tELFL Data Output (DQ0–DQ14) DQ0–DQ14 Address Input DQ15 Output DQ15/A-1 Data Output (DQ0–DQ7) tFLQZ tELFH BYTE# BYTE# Switching from byte to word mode Data Output (DQ0–DQ7) DQ0–DQ14 Address Input DQ15/A-1 Data Output (DQ0–DQ14) DQ15 Output tFHQV 21519A-19 Figure 15. BYTE# Timings for Read Operations CE# The falling edge of the last WE# signal WE# BYTE# tSET (tAS) tHOLD (tAH) Note: Refer to the Erase/Program Operations table for tAS and tAH specifications. 21519A-20 Figure 16. 30 BYTE# Timings for Write Operations Am29DL800B P R E L I M I N A R Y AC CHARACTERISTICS Erase and Program Operations Parameter JEDEC Std. Description tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min tASO Address Setup Time to OE# low during toggle bit polling Min 45 45 50 ns tAH Address Hold Time Min 45 45 50 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min tDVWH tDS Data Setup Time Min tWHDX tDH Data Hold Time Min tOEPH Output Enable High during toggle bit polling Min tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHDL tWPH Write Pulse Width High Min 30 ns tSR/W Zero Latency Between Read and Write Operations Min 0 ns Byte Typ 9 Word Typ 11 tWLAX 70 90 120 Unit 70 90 120 ns 0 ns 0 35 45 ns 50 0 20 35 20 35 ns ns 25 50 ns ns tWHWH1 tWHWH1 Programming Operation (Note 2) tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Write Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Min 90 ns tBUSY µs Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Am29DL800B 31 P R E L I M I N A R Y AC CHARACTERISTICS Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) 555h PA PA PA tAH CE# tCH tGHWL OE# tWHWH1 tWP WE# tWPH tCS tDS tDH PD A0h Data Status DOUT tBUSY tRB RY/BY# VCC tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode 21519A-21 Figure 17. Program Operation Timings tAS tWC 2AAh Addresses VA SA VA 555h for chip erase tAH CE# tGHWL tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”). 2. Illustration shows device in word mode. 21519A-22 Figure 18. 32 Chip/Sector Erase Operation Timings Am29DL800B P R E L I M I N A R Y AC CHARACTERISTICS Addresses tWC tWC tRC Valid PA Valid RA tWC Valid PA Valid PA tAH tCPH tACC tCE CE# tCP tOE OE# tOEH tGHWL tWP WE# tDF tWPH tDS tOH tDH Valid Out Valid In Data Valid In Valid In tSR/W WE# Controlled Write Cycle Read Cycle CE# Controlled Write Cycles 21519A-23 Figure 19. Back-to-Back Read/Write Cycle Timings tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ0–DQ6 Status Data Status Data True Valid Data High Z True Valid Data tBUSY RY/BY# Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. 21519A-24 Figure 20. Data# Polling Timings (During Embedded Algorithms) Am29DL800B 33 P R E L I M I N A R Y AC CHARACTERISTICS tAHT tAS Addresses tAHT tASO CE# tCEPH tOEH WE# tOEPH OE# tDH DQ6/DQ2 tOE Valid Data Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data RY/BY# Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle 21519A-25 Figure 21. Enter Embedded Erasing WE# Erase Suspend Erase Toggle Bit Timings (During Embedded Algorithms) Enter Erase Suspend Program Erase Suspend Program Erase Suspend Read Erase Resume Erase Suspend Read Erase Erase Complete DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. 21519A-26 Figure 22. 34 DQ2 vs. DQ6 Am29DL800B P R E L I M I N A R Y AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std. Description All Speed Options Unit tVIDR VID Rise and Fall Time (See Note) Min 500 ns tRSP RESET# Setup Time for Temporary Sector Unprotect Min 4 µs tRRB RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Min 4 µs Note: Not 100% tested. 12 V RESET# 0 V or 3 V 0 V or 3 V tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRRB tRSP RY/BY# 21519A-27 Figure 23. Temporary Sector Unprotect Timing Diagram Am29DL800B 35 P R E L I M I N A R Y VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Protect/Unprotect Data 60h Valid* Verify 60h 40h Status Sector Protect: 100 µs Sector Unprotect: 10 ms 1 µs CE# WE# OE# * For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. 21519A-28 Figure 24. 36 Sector Protect/Unprotect Timing Diagram Am29DL800B P R E L I M I N A R Y AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std. Description 70 90 120 Unit tAVAV tWC Write Cycle Time (Note 1) Min 70 90 120 ns tAVWL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 45 50 ns tDVEH tDS Data Setup Time Min 35 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min tEHEL tCPH CE# Pulse Width High Min 30 Typ 9 tWHWH1 Programming Operation (Note 2) Byte tWHWH1 Word Typ 11 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.7 0 35 35 ns 50 ns ns µs sec Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Am29DL800B 37 P R E L I M I N A R Y AC CHARACTERISTICS 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWHWH1 or 2 tCP CE# tWS tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device. 3. Waveforms are for the word mode. 21519A-29 Figure 25. 38 Alternate CE# Controlled Erase/Program Operation Timings Am29DL800B P R E L I M I N A R Y ERASE AND PROGRAMMING PERFORMANCE Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.7 15 sec Chip Erase Time 14 Excludes 00h programming prior to erasure (Note 4) Byte Program Time 9 300 µs Word Program Time 11 360 µs Byte Mode 9 27 Word Mode 5.8 17 Chip Program Time (Note 3) sec Excludes system level overhead (Note 5) sec Notes: 1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 for further information on command definitions. 6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V –100 mA +100 mA VCC Current Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. TSOP AND SO PIN CAPACITANCE Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Description Test Conditions Min Unit 150°C 10 Years 125°C 20 Years Minimum Pattern Data Retention Time Am29DL800B 39 P R E L I M I N A R Y PHYSICAL DIMENSIONS* TS 048—48-Pin Standard TSOP (measured in millimeters) 0.95 1.05 Pin 1 I.D. 1 48 11.90 12.10 0.50 BSC 24 25 0.05 0.15 18.30 18.50 19.80 20.20 0° 5° 0.25MM (0.0098") BSC 16-038-TS48-2 TS 048 DT95 8-8-96 lv 0.08 0.20 0.10 0.21 1.20 MAX 0.50 0.70 * For reference only. BSC is an ANSI standard for Basic Space Centering TSR048—48-Pin Reverse TSOP (measured in millimeters) 0.95 1.05 Pin 1 I.D. 1 48 11.90 12.10 0.50 BSC 24 25 0.05 0.15 18.30 18.50 19.80 20.20 SEATING PLANE 0.08 0.20 0.10 0.21 1.20 MAX 0.25MM (0.0098") BSC 0° 5° 0.50 0.70 * For reference only. BSC is an ANSI standard for Basic Space Centering. 40 Am29DL800B 16-038-TS48 TSR048 DT95 8-8-96 lv P R E L I M I N A R Y PHYSICAL DIMENSIONS (continued) FGB048 —48-ball Fine-Pitch Ball Grid Array (FBGA), 6 x 9 mm (measured in mm) 0.15 M Z B M 8.80 9.20 DATUM B 5.80 6.20 0.15 M Z B M 0.025 CHAMFER INDEX DATUM A 5.60 BSC 0.40 4.00 BSC 0.80 0.40 ± 0.08 (48x) 0.40 0.08 M Z A B 0.10 Z 0.25 0.45 DETAIL A 0.20 Z 1.20 MAX DETAIL A 16-038-FGB-2 EG137 12-2-97 lv Am29DL800B 41 P R E L I M I N A R Y PHYSICAL DIMENSIONS (continued) SO 044—44-Pin Small Outline (measured in millimeters) 44 23 13.10 13.50 1 15.70 16.30 22 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.10 0.21 2.80 MAX. 0.35 0.50 0.10 0.35 SEATING PLANE SIDE VIEW 42 0° 8° 0.60 1.00 END VIEW 16-038-SO44-2 SO 044 DF83 8-8-96 lv Am29DL800B P R E L I M I N A R Y REVISION SUMMARY FOR AM29DL800B Revision A+1 gramming or erasing bank,” not “at any address.” In the fourth paragraph, clarified “device” to “bank.” Reset Command DC Characteristics Deleted last paragraph in section, which applied to RESET#, not the reset command. Revision A+2 Added reference to Note 4 on ICC6 and ICC7 specifications. AC Characteristics Erase/Program Operations; Alternate CE# Controlled Erase/Program Operations: Corrected the notes reference for tWHWH1 and tWHWH2. These parameters are 100% tested. Corrected the note reference for tVCS. This parameter is not 100% tested. Hardware Reset (RESET#) Added note to table, fixed references to note. Revision A+3 Global Temporary Sector Unprotect Table Removed references to the 80 ns speed option. Added note reference for tVIDR. This parameter is not 100% tested. Changed the 70R ns (VCC ± 5%) speed option to the 70 ns (VCC ± 10%) speed option. Figure 2, In-System Sector Protect/Unprotect Algorithms In the sector protect algorithm, added a “Reset PLSCNT=1” box in the path from “Protect another sector?” back to setting up the next sector address. DQ6: Toggle Bit I Figure 24, Sector Protect/Unprotect Timing Diagram A valid address is not required for the first write cycle; only the data 60h. Erase and Programming Performance In Note 2, the worst case endurance is now 1 million cycles. In the first and second paragraphs, clarified that the toggle bit may be read “at any address within the pro- Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Am29DL800B 43