Mitsubishi CM75DU-24F Igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM75DU-24F
HIGH POWER SWITCHING USE
CM75DU-24F
¡IC ..................................................................... 75A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point
94
80 ±0.25
4
G1E1
12
4
4 11
18
E2 G2
C1
E2
C2E1
2–φ6.5
MOUNTING HOLES
23
27
24
24
CM
48
23
24
17
13
7
13.5
2.5 16
TAB #110. t=0.5
RTC
C2E1
C1
E2
LABEL
21.2
+1
30 –0.5
RTC
G1 E1
25
7.5
16 2.5
E2 G2
3–M5NUTS
12mm deep
CIRCUIT DIAGRAM
Feb. 2009
MITSUBISHI IGBT MODULES
CM75DU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Ratings
1200
±20
75
150
75
150
450
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
(Note 2)
(Note 2)
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 7.5mA, VCE = 10V
5
6
7
V
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.2
—
1.8
1.9
—
—
—
825
—
—
—
—
—
3.1
—
—
—
0.07
—
—
20
2.4
—
29
1.3
0.75
—
100
50
400
300
150
—
3.2
0.28
0.47
µA
VCE(sat)
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
Tj = 25°C
Tj = 125°C
IC = 75A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 75A, VGE = 15V
VCC = 600V, IC = 75A
VGE = ±15V
RG = 4.2Ω, Inductive load
IE = 75A
IE = 75A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied*2 (1/2 module)
Case temperature measured point is just under the chips
—
0.22*3
42
mA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Ω
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM75DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
125
VGE=20V
9.5
9
100
75
8.5
50
8
25
0
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
15
11
10
Tj=25°C
0
0.5
1
1.5
2
2.5
3
3.5
4
VGE = 15V
2.5
2
1.5
1
Tj = 25°C
Tj = 125°C
0.5
0
0
50
100
150
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
103
Tj = 25°C
4
3
IC = 150A
IC = 75A
2
IC = 30A
1
0
6
8
10
12
14
16
18
Tj = 25°C
102
7
5
3
2
101
7
5
3
2
1
1.5
2
2.5
3
3.5
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
3
2
SWITCHING TIMES (ns)
Cies
101
7
5
3
2
100
7
5
3
2
7
5
3
2
100
0.5
20
102
CAPACITANCE Cies, Coes, Cres (nF)
3
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
COLLECTOR CURRENT IC (A)
150
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
Cres
Coes
7
5
tf
3
2
td(off)
102
7
5
3
2
101
7
5
3
2
VGE = 0V
10–1 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
100 0
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
td(on)
tr
Conditions:
VCC = 600V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive load
2
3
5 7 101
2
3
5 7 102
COLLECTOR CURRENT IC (A)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM75DU-24F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
102
7
5
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
Irr
trr
3
2
101
7
5
Conditions:
VCC = 600V
VGE = ±15V
RG = 4.2Ω
Tj = 25°C
Inductive load
3
2
100 0
10
2
3
5 7 101
2
5 7 102
3
EMITTER CURRENT IE (A)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.28K/W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.47K/W
100
7
5
3
2
3
2
10–1
10–1
10–2
10–2
7
5
3
2
7
5
3
2
10–3
7
5
3
2
7
5
3
2
Single Pulse
TC = 25°C
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 75A
18
16
VCC = 400V
14
VCC = 600V
12
10
8
6
4
2
0
0
200
400
600
800
1000 1200
GATE CHARGE QG (nC)
Feb. 2009
4
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