BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R G T2 T1 T2 G T1 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt Parameter PG(AV) Tstg Tj Unit RMS on-state current (full sine wave) TO-220AB Tc = 100°C 25 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 260 250 A 340 A²s I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < tp = 10 ms VDSM/V RSM Non repetitive surge peak off-state voltage IGM Value Peak gate current F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Average gate p ower diss ipation + 100 Storage junction temperature range Operating junction temperature range ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) ■ Symbol IGT (1) VGT Test Conditions VD = 12 V VGD VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT Quadrant RL = 33 Ω RL = 3.3 kΩ Tj = 125°C BTA/BTB 35 50 mA MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V I - III VD = 67 % VDRM gate open Tj = 125°C (dI/dt)c (2) Without snubber BW I - II - III MAX. 50 75 mA MAX. 70 80 mA 80 100 MIN. 500 1000 V/µs MIN. 13 22 A/ms II dV/dt (2) Unit CW Tj = 125°C BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) ■ STANDARD (4 Quadrants) Symbol Test Conditions IGT (1) Quadrant RL = 33 Ω VD = 12 V VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT RL = 3.3 Ω Unit I - II - III IV MAX. 50 100 mA ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 80 mA MAX. 70 VGT VGD Value Tj = 125°C I - III - IV II mA 160 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c =13.3A/ms Tj = 125°C MIN. 500 V/µs MIN. 10 V/µs STATIC CHARACTERISTICS Symbol Test Conditions VTM (2) ITM = 35 A Vto (2) tp = 380 µs Value Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 16 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 3 mA IRRM Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 0.8 °C/W Rth(j-a) Junction to ambient 60 °C/W PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Type Package 50 mA Standard TO-220AB Weight Base quantity Packing mode 2.3 g 250 Bulk 200 V ~~ 1000 V BTBV/BTA26 X X OTHER INFORMATION Part Number BTB/BTA26 Marking BTB/BTA26 BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) F ig. 1: Maximum power dis s ipation vers us R MS on-s ta te current (full cycle). 30 F ig. 2-1: R MS on-s tate current vers us cas e temperature (full cycle). P (W) 30 B T B /T 25 25 25 20 20 15 15 10 10 5 0 IT (R MS ) (A ) 5 10 15 20 25 F ig. 3: R ela tive variation of thermal impedance vers us puls e duration. 1E +0 K =[Zth/R th] 0 T c (°C ) 0 25 F ig. 4: values ). 300 50 T j max 10 T j=25°C Zth(j-a) B TA26 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 IT S M (A ) 250 t=20ms 200 One cycle Non repetitive T j initial=25°C 150 R epetitive T c=75°C 50 0 Number of ycles c 1 10 T j max. V to = 0.85 V R d = 16 Ωm V T M (V ) F ig. 5: S urge peak on-s tate current versus number of cycles. 100 125 O n-s tate characteris tics (ma ximum tp (s ) 300 100 Zth(j-a) B TA/B T B 24/T 25 1E -2 1E -3 1E -3 75 IT M (A ) 100 Zth(j-c) 1E -1 B TA 25/26 5 IT (R MS ) (A ) 0 B TA 24 100 1000 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) F ig. 6: Non-repetitive s urge peak on-s tate current for a s inus oida l puls e with width tp < 10ms, a nd corres ponding value of I²t. IT S M (A ),I²t (A ²s ) F ig. 7: R elative va riation of gate trigger current, holding current and la tching current versus junction temperature (typical va lues ). 2.5 3000 IG T,IH,IL [T j] / IG,IH,IL T [T j=25°C ] T j initial=25°C 1000 2.0 dI/dt limitation: 50A /µs IG T 1.5 IT S M 0.10 1.00 T j(°C ) 10.00 F ig. 8: R elative varia tion of critical rate of decreas e of main current vers us (dV /dt)c (typica l values ). (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 B W/C W/T 2535 1.4 B 1.2 1.0 0.8 0.6 (dV /dt)c (V /µs ) 0.4 0.1 1.0 10.0 IH & IL 0.5 I²t tp (ms ) 100 0.01 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 F ig. 9: R elative variation of critical rate of decreas e of main current vers us junction temperature. 6 (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 5 4 3 2 1 100.0 0 T j (°C ) 0 25 50 75 100 125