Sirectifier BTA26 Discrete triacs(non-isolated/isolated) Datasheet

BTB/BTA26
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
G
T2
T1
T2
G
T1
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I²t
dI/dt
Parameter
PG(AV)
Tstg
Tj
Unit
RMS on-state current (full sine wave)
TO-220AB
Tc = 100°C
25
A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
260
250
A
340
A²s
I²t Value for fusing
Critical rate of rise of on-state current
_ 100 ns
I G = 2 x I GT , tr <
tp = 10 ms
VDSM/V RSM Non repetitive surge peak off-state
voltage
IGM
Value
Peak gate current
F = 120 Hz
Tj = 125°C
50
A/µs
tp = 10 ms
Tj = 25°C
VDRM/VRRM
V
tp = 20 µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
Average gate p ower diss ipation
+ 100
Storage junction temperature range
Operating junction temperature range
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
■
Symbol
IGT (1)
VGT
Test Conditions
VD = 12 V
VGD
VD = VDRM
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
Quadrant
RL = 33 Ω
RL = 3.3 kΩ
Tj = 125°C
BTA/BTB
35
50
mA
MAX.
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.2
V
I - III
VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) Without snubber
BW
I - II - III
MAX.
50
75
mA
MAX.
70
80
mA
80
100
MIN.
500
1000
V/µs
MIN.
13
22
A/ms
II
dV/dt (2)
Unit
CW
Tj = 125°C
BTB/BTA26
Discrete Triacs(Non-Isolated/Isolated)
■
STANDARD (4 Quadrants)
Symbol
Test Conditions
IGT (1)
Quadrant
RL = 33 Ω
VD = 12 V
VD = VDRM
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
RL = 3.3 Ω
Unit
I - II - III
IV
MAX.
50
100
mA
ALL
MAX.
1.3
V
ALL
MIN.
0.2
V
MAX.
80
mA
MAX.
70
VGT
VGD
Value
Tj = 125°C
I - III - IV
II
mA
160
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c =13.3A/ms
Tj = 125°C
MIN.
500
V/µs
MIN.
10
V/µs
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM (2)
ITM = 35 A
Vto (2)
tp = 380 µs
Value
Unit
Tj = 25°C
MAX.
1.55
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
16
mΩ
IDRM
VDRM = VRRM
Tj = 25°C
5
µA
3
mA
IRRM
Tj = 125°C
MAX.
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
0.8
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Type
Package
50 mA
Standard
TO-220AB
Weight
Base
quantity
Packing
mode
2.3 g
250
Bulk
200 V ~~ 1000 V
BTBV/BTA26
X
X
OTHER INFORMATION
Part Number
BTB/BTA26
Marking
BTB/BTA26
BTB/BTA26
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
30
F ig. 2-1: R MS on-s tate current vers us cas e
temperature (full cycle).
P (W)
30
B T B /T 25
25
25
20
20
15
15
10
10
5
0
IT (R MS ) (A )
5
10
15
20
25
F ig. 3: R ela tive variation of thermal impedance
vers us puls e duration.
1E +0
K =[Zth/R th]
0
T c (°C )
0
25
F ig. 4:
values ).
300
50
T j max
10
T j=25°C
Zth(j-a)
B TA26
1E -2
1E -1
1E +0
1E +1
1E +2 5E +2
IT S M (A )
250
t=20ms
200
One cycle
Non repetitive
T j initial=25°C
150
R epetitive
T c=75°C
50
0
Number of ycles
c
1
10
T j max.
V to = 0.85
V
R d = 16 Ωm
V T M (V )
F ig. 5: S urge peak on-s tate current versus
number of cycles.
100
125
O n-s tate characteris tics (ma ximum
tp (s )
300
100
Zth(j-a)
B TA/B T B 24/T 25
1E -2
1E -3
1E -3
75
IT M (A )
100
Zth(j-c)
1E -1
B TA 25/26
5
IT (R MS ) (A )
0
B TA 24
100
1000
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
BTB/BTA26
Discrete Triacs(Non-Isolated/Isolated)
F ig. 6: Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of I²t.
IT S M (A ),I²t (A ²s )
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
2.5
3000
IG T,IH,IL [T j] / IG,IH,IL
T
[T j=25°C ]
T j initial=25°C
1000
2.0
dI/dt limitation:
50A /µs
IG T
1.5
IT S M
0.10
1.00
T j(°C )
10.00
F ig. 8: R elative varia tion of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ).
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
B W/C W/T 2535
1.4
B
1.2
1.0
0.8
0.6
(dV /dt)c (V /µs )
0.4
0.1
1.0
10.0
IH & IL
0.5
I²t
tp (ms )
100
0.01
1.0
0.0
-40
-20
0
20
40
60
80
100
120
140
F ig. 9: R elative variation of critical rate of
decreas e of main current vers us junction
temperature.
6
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
5
4
3
2
1
100.0
0
T j (°C )
0
25
50
75
100
125
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