Siemens MPSA92 Pnp silicon high-voltage transistor Datasheet

MPSA 92
MPSA 93
PNP Silicon High-Voltage Transistors
●
●
●
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: MPSA 42
MPSA 43 (NPN)
1
32
Type
MPSA 92
MPSA 93
Marking
MPSA 92
MPSA 93
Ordering Code
Pin Configuration
Q68000-A5906
Q68000-A4810
1
2
3
E
B
C
Package 1)
TO-92
Maximum Ratings
Parameter
Symbol
Values
MPSA 92
MPSA 93
Unit
Collector-emitter voltage
VCE0
300
200
Collector-base voltage
VCB0
300
200
Emitter-base voltage
VEB0
Collector current
IC
500
Base current
IB
100
Total power dissipation, TC = 66 ˚C 2)
Ptot
625
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
V
5
mA
– 65 … + 150
Thermal Resistance
Junction - ambient
Rth JA
≤ 200
Junction - case 2)
Rth JC
≤ 135
1)
2)
K/W
For detailed information see chapter Package Outlines.
Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
MPSA 92
MPSA 93
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Limit Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
MPSA 92
MPSA 93
V(BR)CE0
Collector-base breakdown voltage
IC = 100 µA, IB = 0
MPSA 92
MPSA 93
V(BR)CB0
Emitter-base breakdown voltage
V(BR)EB0
IE = 100 µA, IB = 0
Collector-base cutoff current
VCB = 200 V
VCB = 160 V
VCB = 200 V, TA = 150 °C
VCB = 160 V, TA = 150 °C
V
300
200
–
–
–
–
300
200
–
–
–
–
5
–
–
–
–
–
–
–
–
–
–
100
100
20
20
nA
nA
µA
µA
–
–
100
nA
ICB0
MPSA 92
MPSA 93
MPSA 92
MPSA 93
ICER
Emitter-base cutoff current
VBE = 3 V, IC = 0
DC current gain 1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
Collector-emitter saturation voltage 1)
IC = 20 mA, IC = 2 mA
MPSA 92
MPSA 93
VCEsat
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
–
25
40
25
–
–
–
–
–
–
V
–
–
–
–
0.5
0.4
VBEsat
–
–
0.9
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
fT
–
70
–
Collector-base capacitance
Cobo
–
–
–
–
6
8
AC Characteristics
VCB = 20 V, f = 1 MHz
1)
MPSA 92
MPSA 93
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
MHz
pF
MPSA 92
MPSA 93
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Operating range Ic = f(VCE0)
Collector cutoff current ICB0 = f (TA)
VCB = VCBmax
TA = 25 °C, D = 0
Semiconductor Group
3
MPSA 92
MPSA 93
DC current gain hFE = f (IC)
VCE = 10 V
Transition frequency fT = f (IC)
f = 20 MHz, IC = 20 mA, VCE = 10 V
Collector current IC = f (VBE)
VCE = 10 V
Semiconductor Group
4
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