Transistors SMD Type PNP Transistors BC857T (KC857T) SOT-523 U n it: m m +0.1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 1 ● For Switching and AF Amplifier Applications 0.36±0.1 +0.15 1.6-0. 15 ● Ideally suited for automatic insertion 0.8±0.1 2 0.55 (REF.) ■ Features 0.15±0.05 3 0.3±0.05 +0.1 0.5 -0.1 +0.1 0.8-0. 1 +0.05 0.75-0. 05 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -50 Collector - Emitter Voltage VCEO -45 Emitter - Base Voltage Unit V VEBO -6 Collector Current - Continuous IC -0.1 A Collector Power Dissipation PC 150 mW Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB=0 -45 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50 V , IE=0 Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base-emitter voltage VBE(on) Typ Max Unit V -0.1 uA VEB= -6V , IC=0 -0.1 uA IC=-10 mA, IB=-0.5mA -0.3 IC=-100 mA, IB=-5mA -0.65 IC=-10 mA, IB=-0.5mA -0.7 IC=-100 mA, IB=-5mA -0.9 VCE= -5V, IC= -2mA -0.6 VCE= -5V, IC= -10mA V -0.75 -0.82 DC current gain hFE VCE= -5V, IC= -2mA Noise figure NF VCE=-5V,f=1MHz,Ic=0.2mA Rs=2KΩ,BW=200HZ 10 dB Collector output capacitance Cob VCB= -10V,f=1MHz 4.5 pF Transition frequency fT VCE= -5 V,IC=-10mA,f=100MHz 125 100 800 MHz ■ Classification of hfe Type BC857AT BC857BT BC857CT Range 125-250 220-475 420-800 Marking 3E 3F 3G www.kexin.com.cn 1