TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices Qualified Level JAN JANTX JANTXV 2N5796 2N5796U 2N5795 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol Value Units VCEO VCBO VEBO IC 60 60 5.0 600 Vdc Vdc Vdc mAdc (1) One @ TA = +250C Total Power Dissipation Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA ≥ +250C 2) Derate linearly 3.43 mW/0C for TA ≥ +250C PT TJ, Tstg Section 0.5 Both Sections 0.6 -65 to +175 W 0 C 6 PIN SURFACE MOUNT* *See MILPRF19500/496 for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics TO-78* (2) Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCBO = 60 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc ICBO 10 10 ηAdc µAdc IEBO 100 10 ηAdc µAdc 42203 Page 1 of 2 2N5795, 2N5796 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. hFE 40 40 40 40 20 20 hFE 75 100 100 100 50 50 Max. Unit ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc 2N5795 2N5796 2N5796U 150 300 VCE(sat) 0.4 1.6 Vdc VBE(sat) 1.3 2.6 Vdc DYNAMIC CHARACTERISTICS Magnitude of Small-Signal Forward Current Transfer Ratio IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 2.0 10 Cobo 8.0 pF Cibo 25 pF t on 50 ηs t off 140 ηs SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc Turn-Off Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc 1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 2 of 2