ON NTD6600N Power mosfet 100 v, 12 a, n−channel, logic level dpak Datasheet

NTD6600N
Power MOSFET
100 V, 12 A, N−Channel,
Logic Level DPAK
Features
• Source−to−Drain Diode Recovery Time Comparable to a
V(BR)DSS
RDS(on) TYP
ID MAX
100 V
118 mW @ 5.0 V
12 A
Typical Applications
N−Channel
• PWM Motor Controls
• Power Supplies
• Converters
D
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
Vdc
Drain−to−Source Voltage (RGS = 1.0 MW)
VDGR
100
Vdc
VGS
± 20
Vdc
ID
ID
12
9.0
44
Adc
56.6
0.38
1.76
1.28
W
W/°C
W
W
TJ, Tstg
−55 to
+175
°C
EAS
72
mJ
Gate−to−Source Voltage
− Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA =100°C
Drain Current − Pulsed (Note 3)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc,
IL = 12 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
IDM
PD
S
MARKING
DIAGRAMS
4
Drain
4
Apk
1 2
3
2
1
3
Drain
Gate
Source
4
Drain
4
°C/W
RqJC
RqJA
RqJA
2.65
85
117
TL
260
DPAK
CASE 369C
(Surface Mounted)
STYLE 2
1
2
DPAK−3
CASE 369D
(Straight Lead)
STYLE 2
3
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
YWW
NT
6600G
Rating
G
YWW
NT
6600G
•
•
•
http://onsemi.com
Discrete Fast Recovery Diode
Avalanche Energy Specified
Logic Level
Pb−Free Packages are Available
1 2 3
Gate Drain Source
Y
WW
NT6600
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
Publication Order Number:
NTD6600N/D
NTD6600N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
100
−
−
−
−
−
−
1.0
10
−
−
± 100
nAdc
1.0
−
1.5
−4.4
2.0
−
Vdc
mV/°C
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
Vdc
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc)
RDS(on)
−
118
146
mW
Drain−to−Source On−Voltage (VGS = 5.0 Vdc, ID = 12 Adc)
VDS(on)
−
1.5
2.2
Vdc
gFS
−
10
−
mhos
Ciss
−
463
700
pF
Coss
−
116
225
Crss
−
36
75
td(on)
−
10.5
20
tr
−
75
140
td(off)
−
26
40
tf
−
50
90
Qtot
−
11.3
20
Qgs
−
1.9
−
Qgd
−
7.4
−
VSD
−
−
0.90
0.80
1.4
−
Vdc
trr
−
80
−
ns
ta
−
50
−
tb
−
30
−
QRR
−
0.240
−
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Notes 4 & 5)
Turn−On Delay Time
Rise Time
(VDD = 80 Vdc, ID = 6.0 Adc,
VGS = 5.0 Vdc, RG = 9.1 W)
Turn−Off Delay Time
Fall Time
Total Gate Charge
(VDS = 80 Vdc, ID = 6.0 Adc,
VGS = 5.0 Vdc)
Gate−to−Source Charge
Gate−to−Drain Charge
ns
nC
BODY−DRAIN DIODE RATINGS (Note 4)
Diode Forward On−Voltage
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
mC
4. Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
Device
NTD6600N
NTD6600N−1
NTD6600N−1G
NTD6600NT4
NTD6600NT4G
Package
Shipping †
DPAK
DPAK−3
75 Units/Rail
DPAK−3
(Pb−Free)
DPAK
DPAK
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTD6600N
TYPICAL CHARACTERISTICS
24
21
4.2 V
10 V
5.5 V
25
TJ = 25°C
4V
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VGS = 9 V
3.8 V
18
15
3.4 V
12
9
3V
6
2.6 V
3
0
10
TJ = 150°C
TJ = −55°C
5
2
6
4
8
0
10
0
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.4
VGS = 5 V
0.3
TJ = 150°C
0.2
TJ = 25°C
0.1
TJ = −55°C
0
0
4
8
12
16
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
6
0.20
TJ = 25°C
0.18
0.16
0.14
VGS = 5 V
0.12
0.10
VGS = 10 V
0.08
0.06
0.04
0
4
8
12
16
20
24
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Temperature
10000
2.5
VGS = 0 V
ID = 12 A
2.25 V = 5 V
GS
2.0
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
15
TJ = 25°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
20
TJ = 150°C
1000
1.75
1.5
1.25
1.0
100
TJ = 125°C
0.75
0.5
−50
−25
0
25
50
75
100
125
150
175
10
0
10
20
30
40
50
60
70
80
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
90
100
NTD6600N
TJ = 25°C
VDS = 0 V
VGS = 0 V
Ciss
1250
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1500
1000
Ciss
750 Crss
500
Coss
250
Crss
0
10
5
0
5
10
15
20
25
8
100
VDS
80
6
60
4
50
Q1
30
2
20
ID = 12 A
TJ = 25°C
0
0
2
4
6
8
10
12
14
16
10
0
18
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
12
1000
100
IS, SOURCE CURRENT (AMPS)
VDS = 80 V
ID = 6 A
VGS = 5 V
t, TIME (ns)
40
Q2
Figure 7. Capacitance Variation
tr
tf
td(off)
td(on)
10
VGS = 0 V
10
1
10
6
4
2
100
0
0.25
0.5
0.75
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
EAS, SINGLE PULSE DRAIN −TO −
SOURCE AVALANCE ENGERGY (mJ)
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
10 ms
10
100 ms
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
TJ = 25°C
8
0
1
I D, DRAIN CURRENT (AMPS)
70
QT
VGS VDS
DRAIN−TO−SOURCE VOLTAGE (V)
100
90
VGS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
1.0
10
1 ms
10 ms
dc
100
80
ID = 12 A
70
60
50
40
30
20
10
0
25
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy
versus Starting Junction Temperature
http://onsemi.com
4
1.0
175
NTD6600N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD6600N
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD6600N/D
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