UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Ordering Number Note: MMBT5401G-x-AE3-R Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-011.I MMBT5401 PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -160 V Collector -Emitter Voltage VCEO -150 V Emitter -Base Voltage VEBO -5 V DC Collector Current IC -600 mA Power Dissipation PD 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(Note) SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product Output Capacitance fT COB Noise Figure NF TEST CONDITIONS IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-120V, IE=0 VBE=-3V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz IC=-0.25mA, VCE=-5V RS=1k, f=10Hz ~ 15.7kHz MIN -160 -150 -5 TYP MAX -50 -50 80 80 80 100 160 UNIT V V V nA nA 400 -0.2 -0.5 -1 -1 300 6.0 MHz pF 8 dB V V Note: Pulse test: PW<300s, Duty Cycle<2% CLASSIFICATION OF hFE RANK RANGE A 80-170 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 150-240 C 200-400 2 of 4 QW-R206-011.I MMBT5401 PNP SILICON TRANSISTOR ■ TYPICAL CHARACTERICS Fig.2 DC Current Gain Fig.1 Collector Output Capacitance 3 10 Capacitance, Cob (pF) 20 VCE=-5V 16 DC Current Gain, hFE f=1MHz IE=0 12 8 4 1 -10 1 10 0 10 0 0 -10 2 10 2 -10 -1 -10 Saturation Voltage, VBE(SAT) VCE(SAT) (V) Collector Current, Ic (mA) VCE=-5V 1 -10 0 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base-Emitter Voltage, VBE (V) 2 -10 3 -10 Fig.4 Saturation Voltage Fig.3 Base-Emitter on Voltage 2 -10 1 -10 Collector Current, Ic (mA) Collector-Base Voltage, VCB (V) 3 -10 0 -10 1 -10 Ic=10*IB VBE(SAT) 0 -10 -1 -10 VCE(SAT) -2 -10 -1 -10 0 -10 1 -10 2 -10 3 -10 Collector Current, Ic (mA) Current Gain-Bandwidth Product, fT(MHz) Fig.5 Current Gain-Bandwidth Product 3 10 VCE=-10V 2 10 1 10 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10 Collector Current, Ic (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-011.I MMBT5401 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-011.I