CPH5871 Power MOSFET 30V, 52mΩ, 3.5A, Single N-Channel with Schottky Diode Features www.onsemi.com VDSS • Composite Type with a N-channel Sillicon MOSFET and a Schottky Barrier Diode Contained in One Package Facilitating High-density Mounting • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance [MOSFET] • High Speed Switching [MOSFET] • 1.8V Drive [SBD] • Short Reverse Recovery Time [SBD] • Low Forward Voltage [MOSFET] RDS(on) Max 52mΩ@ 4.5V ID Max 74mΩ@ 2.5V 3.5A 30V 132mΩ@ 1.8V Electrical Connection N-Channel 5 4 3 Specifications 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit [MOSFET] VDSS 30 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3.5 A IDP 14 A PD 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +125 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% 1 2 Packing Type : TL When mounted on ceramic substrate (600mm2 × 0.8mm) 1unit YZ Power Dissipation Marking TL [SBD] Repetitive Peak Reverse Voltage VRRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V Average Output Current IO 1 A 10 A Surge Forward Current 50Hz sine wave, 1cycle IFSM Junction Temperature Tj −55 to +125 °C Storage Temperature Tstg −55 to +125 °C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient When mounted on ceramic substrate (600mm2 × 0.8mm) 1unit RθJA 138.8 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 2 1 Publication Order Number : CPH5871/D LOT No. Drain to Source Voltage CPH5871 Electrical Characteristics at Ta = 25°C Parameter Symbol Value Conditions min typ Unit max [MOSFET] Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 30 1 μA V Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA 1.3 V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 0.4 Forward Transconductance gFS VDS=10V, ID=2A 2.0 RDS(on)1 ID=2A, VGS=4.5V 40 52 mΩ Static Drain to Source On-State Resistance RDS(on)2 ID=1A, VGS=2.5V 53 74 mΩ RDS(on)3 ID=0.5A, VGS=1.8V 82 132 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time 3.4 S 430 pF 59 pF Crss 38 pF td(on) 10 ns Rise Time tr 41 ns Turn-OFF Delay Time td(off) 36 ns Fall Time tf 37 ns Total Gate Charge Qg 4.7 nC Gate to Source Charge Qgs 0.8 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD IS=3.5A, VGS=0V VR IR=0.5mA VF1 VF2 VDS=10V, f=1MHz See specified Test Circuit VDS=15V, VGS=4.5V, ID=3.5A 1.1 nC 0.8 1.2 V IF=0.7A 0.45 0.5 V IF=1A 0.48 0.53 V 15 μA [SBD] Reverse Voltage Forward Voltage 30 Reverse Current IR VR=16V Interterminal Capacitance C VR=10V, f=1MHz, 1cycle Reverse Recovery Time trr IF= IR=100mA, See specified Test Circuit V 27 pF 10 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit trr Test Circuit (MOSFET) (SBD) VDD=15V VIN 4.5V 0V ID=2A RL=7.5Ω D 50Ω VOUT PW=10μs D.C.≤1% 100Ω 10μs G 10Ω 100mA VIN 10mA 100mA Duty≤10% --5V trr P.G 50Ω S CPH5871 www.onsemi.com 2 CPH5871 www.onsemi.com 3 CPH5871 www.onsemi.com 4 CPH5871 www.onsemi.com 5 CPH5871 Package Dimensions CPH5871-TL-H / CPH5871-TL-W CPH5 CASE 318BC ISSUE O unit : mm 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode Recommended Soldering Footprint 2.4 1.4 0.6 0.95 0.95 ORDERING INFORMATION Device CPH5871-TL-H CPH5871-TL-W Package Shipping Note CPH5 SC-74A, SOT-25 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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