MBR30L60CT, MBRF30L60CT SWITCHMODE™ Power Rectifier 60 V, 30 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 60 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 30 A Total (15 A Per Diode Leg) Guard−Ring for Stress Protection These are Pb−Free Devices 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAMS Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams (TO−220 & TO−220FP) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220 FULLPAK] CASE 221D STYLE 3 1 2 AYWW B30L60G AKA 3 4 MAXIMUM RATINGS Please See the Table on the Following Page TO−220AB CASE 221A STYLE 6 1 2 AYWW B30L60G AKA 3 A Y WW B30L60 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 0 1 Publication Order Number: MBR30L60CT/D MBR30L60CT, MBRF30L60CT MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit VRRM VRWM VR 60 V IF(AV) 15 30 A IFSM 240 A Operating Junction Temperature (Note 1) TJ −55 to +150 °C Storage Temperature Tstg −65 to +175 °C > 400 > 8000 V Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current MBR30L60CT (Rated VR) TC = 133°C MBRF30L60CT (Rated VR) TC = 108°C (Per Leg) (Per Device) (Per Device) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance MBR30L60CT Junction−to−Case Junction−to−Ambient Junction−to−Case Junction−to−Ambient MBRF30L60CT Symbol Value RqJC RqJA RqJC RqJA 2.1 70 5.0 75 Typ Max 0.57 0.53 0.75 0.70 0.62 0.57 0.81 0.73 137 62 350 110 Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 15 A, TC = 25°C) (IF = 15 A, TC = 125°C) (IF = 30 A, TC = 25°C) (IF = 30 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V mA mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Package Type Shipping† MBR30L60CTG TO−220 (Pb−Free) 50 Units / Rail MBRF30L60CTG TO−220FP (Pb−Free) 50 Units / Rail Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 MBR30L60CT, MBRF30L60CT 100 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 100 125°C 10 10 150°C 85°C TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 85°C 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 0.4 0.6 0.8 1 1.2 1.4 1.6 Figure 2. Maximum Forward Voltage 1.0E+00 1.0E+00 150°C 125°C 1.0E−02 125°C 1.0E−02 85°C 1.0E−03 150°C 1.0E−01 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1.0E−01 85°C 1.0E−03 1.0E−04 1.0E−04 TJ = 25°C 1.0E−05 0 10 20 30 40 50 60 1.0E−06 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 6 RqJC = 2.1°C/W 100 110 120 130 140 150 IF, AVERAGE FORWARD CURRENT (A) 26 24 22 20 18 16 14 12 10 8 6 4 2 0 90 TJ = 25°C 1.0E−05 VR, REVERSE VOLTAGE (V) IF, AVERAGE FORWARD CURRENT (A) 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 1.0E−06 150°C TJ = 25°C 0.1 0 1.6 125°C 160 RqJA = 70°C/W 5 dc 4 3 SQUARE WAVE 2 1 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg MBR30L60CT Figure 6. Current Derating, Ambient per Leg MBR30L60CT http://onsemi.com 3 26 RqJC = 5.0°C/W 24 dc 22 20 18 16 SQUARE WAVE 14 12 10 8 6 4 2 0 30 40 50 60 70 80 90 100 110 120 130 140 150 160 TC, CASE TEMPERATURE (°C) 6 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) MBR30L60CT, MBRF30L60CT RqJA = 75°C/W 5 4 dc 3 SQUARE WAVE 2 1 0 0 R(t), TRANSIENT THERMAL RESISTANCE 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) 140 160 Figure 8. Current Derating, Ambient per Leg MBRF30L60CT 10000 TJ = 150°C TJ = 25°C C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) Figure 7. Current Derating, Case per Leg MBRF30L60CT 20 SQUARE WAVE dc 0 2 4 6 8 1000 100 10 10 12 14 16 18 20 22 24 26 28 30 0 10 20 30 40 IO, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 9. Forward Power Dissipation Figure 10. Capacitance 50 60 10 D= 0.5 1 0.2 0.1 0.1 0.05 P(pk) 0.01 t1 SINGLE PULSE 0.01 0.000001 t2 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Thermal Response Junction−to−Case, per Leg for MBR30L60CT http://onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR30L60CT, MBRF30L60CT 100 D= 0.5 0.2 10 1 0.1 0.05 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 12. Thermal Response Junction−to−Ambient, per Leg for MBR30L60CT 10 D= 0.5 0.2 0.1 1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 10 100 1000 100 1000 R(t), TRANSIENT THERMAL RESISTANCE Figure 13. Thermal Response Junction−to−Case, per Leg for MBRF30L60CT 100 D= 0.5 10 0.2 0.1 0.02 0.05 1 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 10 Figure 14. Thermal Response Junction−to−Ambient, per Leg for MBRF30L60CT http://onsemi.com 5 MBR30L60CT, MBRF30L60CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 6 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR30L60CT, MBRF30L60CT PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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