AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3 lead SOT‑23, while the AT32011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents. • Lead-free Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscilla tor, or active mixer. Typical amplifier designs at 900 MHz yield 1.2 dB noise figures with 12 dB or more associated gain at a 2.7 V, 2 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Avago’s 10 GHz f t, 30 GHz fMAX Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA AT-32033: 1 dB NF, 12.5 dB GA • Characterized for End-Of-Life Battery Use (2.7 V) • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available Pin Connections and Package Marking EMITTER COLLECTOR 320x BASE EMITTER SOT-143 (AT-32011) COLLECTOR 320x BASE EMITTER SOT-23 (AT-32033) Note: Notes: Top view. Package marking provides orientation Top View. Package Marking provides and identification. and identification. "x" is orientation the date code. "x" is the date code. AT-32011, AT-32033 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum[1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 11 VCEO Collector-Emitter Voltage V 5.5 Thermal Resistance[2]: θjc = 550 °C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Tmounting surface = 25°C. 3. Derate at 1.82 mW/°C for TC > 40°C. IC Collector Current mA 32 PT Power Dissipation[2, 3] mW 200 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units AT-32011 Min. Typ. Max. 1.3[1] NF Noise Figure VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 1.0[1] GA Associated Gain VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 12.5[1] 14[1] – 70 hFE Forward Current Transfer Ratio VCE = 2.7 V, IC = 2 mA Min. 11[2] 300 AT-32033 Typ. Max. 1.0[2] 1.3[2] 12.5[2] 70 300 ICBO Collector Cutoff Current VCB = 3 V µA 0.2 0.2 IEBO Emitter Cutoff Current VEB = 1 V µA 1.5 1.5 Notes: 1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB. 2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB. 1000 pF VBB W = 10 L = 1870 W = 30 L = 60 RF IN 1000 pF VCC W = 10 CKT A: L = 380 CKT B: L = 380 TEST CIRCUIT BOARD MATL = 0.062" FR-4 (ε = 4.8) W = 30 L = 60 W = 10 L = 1870 CKT A: 25 Ω CKT B: 5 Ω RF OUT CKT A: W = 30 L = 50 x 2 CKT B: W = 30 L = 60 W = 10 CKT A: L = 105 CKT B: L = 850 NOT TO SCALE DIMENSIONS IN MILS Figure 1. Test Circuit for Noise Figure and Associated Gain. AT-32011 fig 1 This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. Characterization Information, TA = 25°C Symbol Parameters and Test Conditions AT-32011 AT-32033 Units Typ. Typ. P1dB Power at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 13 13 G1dB Gain at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dB 16.5 15 IP3 Output Third Order Intercept Point (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 24 24 f = 0.9 GHz dB 13 11.5 |S21|E2 Gain in 50 Ω System VCE = 2.7 V, IC = 2 mA 25 15 1 mA 2 mA 5 mA 10 mA 20 mA 0.5 0 0.5 1 1.5 2 15 Ga (dB) 1 0 20 20 1.5 Ga (dB) NOISE FIGURE (dB) 2 10 1 mA 2 mA 5 mA 10 mA 20 mA 5 0 2.5 0 0.5 Figure 2. AT-32011 and AT-32033 Minimum Noise Figure vs. Frequency and Current at Vce = 2.7 V. 10 5 1.5 2.0 2.5 FREQUENCY (GHz) Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain Compression vs. Frequency and Current at Vce = 2.7 V. AT-32011 fig 5 0 2.5 0 0.5 1.0 15 10 2 mA 5 mA 10 mA 20 mA 0.5 10 2 mA 5 mA 10 mA 20 mA 5 1.0 1.5 2.0 2.5 FREQUENCY (GHz) Figure 6. AT-32011 1 dB Compressed Gain vs. Frequency and Current at Vce = 2.7 V. AT-32011 fig 6 2.5 AT-32011 fig 4 15 0 2.0 Figure 4. AT-32033 Associated Gain at Optimum Noise Match vs. Frequency and Current at Vce = 2.7 V. 20 0 1.5 FREQUENCY (GHz) 20 5 2 mA 5 mA 10 mA 20 mA 1.0 2.0 G 1dB (dB) G 1dB (dB) P 1dB (dBm) 15 0.5 1.5 AT-32011 fig 3 20 0 1.0 Figure 3. AT-32011 Associated Gain at Optimum Noise Match vs. Frequency and Current at Vce = 2.7 V. AT-32011 fig 2 -5 1 mA 2 mA 5 mA 10 mA 20 mA 5 FREQUENCY (GHz) FREQUENCY (GHz) 0 10 0 0 0.5 1.0 1.5 2.0 2.5 FREQUENCY (GHz) Figure 7. AT-32033 1 dB Compressed Gain vs. Frequency and Current at Vce = 2.7 V. AT-32011 fig 7 AT-32011, AT-32033 Typical Performance 10 G 1dB (dB) P 1dB (dBm) 15 5 20 15 15 10 2 mA 5 mA 10 mA 20 mA 0 -5 20 0 0.5 G 1dB (dB) 20 2 mA 5 mA 10 mA 20 mA 5 1.0 1.5 2.0 0 2.5 0 0.5 FREQUENCY (GHz) 1.0 2.0 0 2.5 0 0.5 1.0 2 mA 5 mA 1.5 2.0 2.5 FREQUENCY (GHz) Figure 10. AT-32033 1 dB Compressed Gain vs. Frequency and Current at Vce = 5 V. AT-32011 fig 9 AT-32011 fig 10 20 20 15 15 2.5 0 G 1dB (dB) 5 G 1dB (dB) P 1dB (dBm) 1.5 Figure 9. AT-32011 1 dB Compressed Gain vs. Frequency and Current at Vce = 5 V. AT-32011 fig 8 7.5 2 mA 5 mA 10 mA 20 mA 5 FREQUENCY (GHz) Figure 8. AT-32011 and AT-32033 Power at 1 dB Gain Compression vs. Frequency and Current at Vce = 5 V. 10 10 10 5 5 -2.5 -5 10 2 mA 5 mA 0 0.5 1.0 1.5 2.0 0 2.5 0 FREQUENCY (GHz) 0.5 2 mA 5 mA 1.0 1.5 2.0 0 2.5 0 0.5 FREQUENCY (GHz) Figure 11. AT-32011 and AT-32033 Power at 1 dB Gain Compression vs. Frequency and Current at Vce = 1 V. Figure 12. AT-32011 1 dB Compressed Gain vs. Frequency and Current at Vce = 1 V. AT-32011 fig 11 1.0 1.5 2.0 2.5 FREQUENCY (GHz) Figure 13. AT-32033 1 dB Compressed Gain vs. Frequency and Current at Vce = 1 V. AT-32011 fig 12 AT-32011 fig 13 25 20 2.0 20 2.0 20 Ga (dBm) Ga 15 1.5 10 1.0 NF 5 0 -50 0.5 0 50 0 100 TEMPERATURE (°C) Figure 14. AT-32011 Noise Figure and Associated Gain at Vce = 2.7 V, Ic = 2 mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded). AT-31011 fig 14 15 1.5 Ga 10 1.0 NF 5 0 -50 0.5 0 50 0 100 TEMPERATURE (°C) Figure 15. AT-32033 Noise Figure and Associated Gain at Vce = 2.7 V, Ic = 2 mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded). AT-32011 fig 15 IP3 (dBm) 2.5 NOISE FIGURE (dB) 25 Ga (dBm) 2.5 NOISE FIGURE (dB) 25 15 10 2 mA 5 mA 10 mA 20 mA 5 0 0 0.5 1.0 1.5 2.0 FREQUENCY (MHz) Figure 16. AT-32011 and AT-32033 Third Order Intercept vs. Frequency and Bias at Vce = 2.7 V, with Optimal Tuning. AT-32011 fig 16 2.5 AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.97 0.88 0.78 0.75 0.67 0.63 0.61 0.59 0.59 0.63 0.69 -11 -52 -86 -94 -127 -144 -155 -175 157 120 94 11.09 10.13 8.67 8.35 6.35 5.25 4.75 3.48 1.77 -0.39 -2.39 3.59 3.21 2.71 2.62 2.08 1.83 1.73 1.49 1.23 0.96 0.76 172 141 117 112 89 77 70 57 40 18 0 -33.55 -20.85 -17.62 -17.27 -16.30 -16.28 -16.42 -16.86 -17.89 -18.40 -15.60 0.021 0.091 0.132 0.137 0.153 0.154 0.151 0.144 0.128 0.120 0.166 83 59 41 37 23 16 13 9 8 23 35 0.99 0.92 0.82 0.79 0.71 0.67 0.65 0.62 0.61 0.59 0.59 -5 -21 -32 -35 -45 -50 -53 -59 -68 -84 -104 25 AT-32011 Typical Noise Parameters, 0.5[1] 0.9 1.8 2.4 0.42 0.71 1.37 1.80 Γopt Ang 0.79 0.70 0.53 0.55 26 54 119 158 Rn – 0.44 0.35 0.18 0.08 15 GAIN (dB) Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA Freq. Fmin GHz dB Mag Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. MSG MAG 5 -5 S21 0 1 2 3 4 5 FREQUENCY (GHz) Figure 17. AT-32011 Gains vs. Frequency at Vce = 1 V, Ic = 1 mA. AT-32011 fig 17 AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.97 0.81 0.61 0.56 0.41 0.36 0.34 0.34 0.38 0.46 0.51 -11 -52 -87 -95 -136 -160 -177 154 119 81 56 11.09 9.88 8.07 7.65 5.43 4.30 3.74 2.49 0.96 -0.84 -1.90 3.58 3.12 2.53 2.41 1.87 1.64 1.54 1.33 1.12 0.91 0.80 170 134 107 101 77 66 59 47 32 15 5 -32.75 -20.30 -17.57 -17.24 -16.61 -16.36 -16.05 -15.10 -12.77 -8.68 -5.68 0.023 0.097 0.132 0.137 0.148 0.152 0.158 0.176 0.230 0.368 0.520 83 60 46 44 39 41 44 49 55 50 37 0.99 0.90 0.78 0.76 0.68 0.65 0.63 0.61 0.59 0.56 0.51 -5 -22 -33 -35 -42 -46 -49 -55 -65 -87 -114 25 AT-32033 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA Fmin dB Mag Γopt Ang 0.5[1] 0.9 1.8 2.4 0.42 0.71 1.37 1.80 0.87 0.73 0.42 0.50 25 55 143 -162 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. Rn – 0.48 0.34 0.11 0.07 GAIN (dB) 15 Freq. GHz MSG MAG MSG 5 -5 S21 0 1 2 3 4 5 FREQUENCY (GHz) Figure 18. AT-32033 Gains vs. Frequency at Vce = 1 V, Ic = 1 mA. AT-32011 fig 18 AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.94 0.80 0.67 0.64 0.55 0.51 0.50 0.48 0.49 0.54 0.61 -13 -60 -97 -104 -137 -154 -165 176 150 116 92 16.67 15.10 12.97 12.48 10.04 8.77 8.13 6.75 4.97 2.73 0.83 6.81 5.69 4.45 4.21 3.18 2.75 2.55 2.18 1.77 1.37 1.10 170 136 112 107 86 76 70 58 43 22 4 -35.25 -23.07 -20.34 -20.05 -19.21 -19.04 -18.99 -18.84 -18.52 -16.98 -14.50 0.017 0.070 0.096 0.099 0.110 0.112 0.112 0.114 0.119 0.142 0.188 82 57 41 39 30 28 27 27 30 36 37 0.99 0.86 0.73 0.70 0.61 0.58 0.56 0.54 0.52 0.50 0.50 -6 -24 -35 -37 -45 -49 -52 -57 -64 -77 -95 30 AT-32011 Typical Noise Parameters, 0.5[1] 0.9 1.8 2.4 0.57 0.78 1.25 1.57 0.69 0.60 0.42 0.44 22 51 117 159 Rn – 0.30 0.25 0.14 0.08 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 20 GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA Γopt Freq. Fmin GHz dB Mag Ang MSG MAG 10 S21 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 19. AT-32011 Gains vs. Frequency at Vce = 2.7 V, Ic = 2 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA AT-32011 fig 19 Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.93 0.68 0.44 0.39 0.23 0.18 0.16 0.17 0.22 0.32 0.40 -13 -56 -86 -93 -129 -156 -176 146 108 76 56 16.61 14.29 11.48 10.88 8.16 6.89 6.19 4.91 3.35 1.51 0.17 6.77 5.18 3.75 3.50 2.56 2.21 2.04 1.76 1.47 1.19 1.02 167 127 101 96 76 66 60 50 36 18 4 -34.89 -23.10 -20.35 -19.91 -17.99 -16.89 -16.14 -14.70 -12.51 -9.19 -6.54 0.018 0.070 0.096 0.101 0.126 0.143 0.156 0.184 0.237 0.347 0.471 82 61 55 54 55 57 57 58 57 51 40 0.99 0.83 0.71 0.70 0.64 0.62 0.61 0.60 0.58 0.55 0.51 -6 -22 -30 -31 -36 -39 -42 -47 -56 -73 -95 30 AT-32033 Typical Noise Parameters, 0.5[1] 0.9 1.8 2.4 0.57 0.78 1.25 1.57 0.77 0.63 0.32 0.40 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 15 49 136 -159 Rn – 0.36 0.28 0.10 0.08 20 GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA Γopt Freq. Fmin GHz dB Mag Ang MSG MAG 10 MSG S21 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 20. AT-32033 Gains vs. Frequency at Vce = 2.7 V, Ic = 2 mA. AT-32011 fig 20 AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.52 0.36 0.34 0.34 0.34 0.34 0.35 0.36 0.39 0.45 0.52 -49 -138 -168 -174 165 155 148 136 120 98 82 31.08 22.96 18.33 17.46 14.13 12.61 11.74 10.23 8.38 6.00 4.25 35.79 14.06 8.25 7.47 5.09 4.27 3.86 3.25 2.62 2.00 1.63 149 102 86 83 71 64 60 52 40 23 7 -37.78 -28.93 -25.15 -24.41 -21.35 -19.92 -19.08 -17.60 -15.86 -13.68 -11.93 0.013 0.036 0.055 0.060 0.086 0.101 0.111 0.132 0.161 0.207 0.253 72 62 64 64 63 61 60 57 51 42 32 0.83 0.40 0.31 0.30 0.28 0.28 0.27 0.27 0.26 0.24 0.23 -22 -42 -42 -42 -45 -49 -52 -58 -67 -84 -106 AT-32011 Typical Noise Parameters, 30 MSG Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA Fmin dB Mag Γopt Ang 0.5[1] 0.9 1.8 2.4 1.39 1.51 1.78 1.96 0.15 0.14 0.28 0.40 65 105 -164 -142 Rn – 0.16 0.13 0.12 0.13 20 GAIN (dB) Freq. GHz MAG S21 MSG 10 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 1 2 3 4 5 FREQUENCY (GHz) Figure 21. AT-32011 Gains vs. Frequency at Vce = 2.7 V, Ic = 20 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.50 0.16 0.08 0.07 0.06 0.07 0.08 0.11 0.15 0.21 0.26 -35 -52 -36 -31 12 31 40 48 53 52 48 29.84 19.58 14.81 13.96 10.71 9.31 8.50 7.16 5.62 3.86 2.61 31.03 9.53 5.50 4.99 3.43 2.92 2.66 2.28 1.91 1.56 1.35 137 94 81 78 66 60 56 48 37 20 6 -37.08 -25.35 -20.63 -19.66 -16.31 -14.75 -13.85 -12.32 -10.49 -8.11 -6.34 0.014 0.054 0.093 0.104 0.153 0.183 0.203 0.242 0.299 0.393 0.482 77 77 75 74 69 66 63 59 52 41 29 0.79 0.53 0.50 0.50 0.49 0.48 0.47 0.46 0.43 0.39 0.33 -18 -20 -24 -25 -31 -35 -38 -44 -54 -71 -91 30 MSG AT-32033 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA Freq. GHz Fmin dB Mag 0.5[1] 0.9 1.8 2.4 1.39 1.51 1.78 1.96 0.15 0.12 0.28 0.46 45 100 -135 -107 Rn – 0.28 0.22 0.14 0.22 GAIN (dB) 20 Γopt Ang Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. AT-32011 fig 21 MAG 10 0 S21 0 1 MSG 2 3 4 5 FREQUENCY (GHz) Figure 22. AT-32033 Gains vs. Frequency at Vce = 2.7 V, Ic = 20 mA. AT-32011 fig 22 AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.95 0.81 0.68 0.64 0.55 0.51 0.49 0.47 0.47 0.52 0.59 -13 -57 -93 -100 -133 -150 -161 180 153 118 94 16.65 15.18 13.16 12.69 10.31 9.05 8.43 7.06 5.29 3.07 1.17 6.80 5.74 4.55 4.31 3.28 2.84 2.64 2.25 1.84 1.42 1.14 170 137 113 109 88 78 71 60 45 24 6 -35.84 -23.56 -20.72 -20.42 -19.49 -19.29 -19.22 -19.03 -18.72 -17.19 -14.73 0.016 0.066 0.092 0.095 0.106 0.109 0.109 0.112 0.116 0.138 0.183 82 58 43 40 32 29 28 29 31 37 38 0.99 0.87 0.74 0.72 0.63 0.60 0.58 0.55 0.54 0.52 0.51 -6 -23 -34 -36 -43 -47 -50 -55 -62 -75 -92 30 AT-32011 Typical Noise Parameters, Freq. GHz Fmin dB 0.5[1] 0.9 1.8 2.4 Mag 0.52 0.75 1.26 1.60 Γopt Ang 0.73 0.63 0.44 0.45 20 49 111 153 Rn – GAIN (dB) 20 Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA MSG MAG 10 0.34 0.28 0.16 0.09 0 S21 0 1 2 3 4 5 FREQUENCY (GHz) Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. Figure 23. AT-32011 Gains vs. Frequency at Vce = 5 V, Ic = 2 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA AT-32011 fig 23 Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.94 0.69 0.45 0.40 0.23 0.17 0.15 0.14 0.20 0.31 0.38 -13 -54 -82 -89 -121 -147 -167 151 109 76 55 16.56 14.34 11.62 11.03 8.33 7.04 6.36 5.06 3.52 1.66 0.26 6.73 5.21 3.81 3.56 2.61 2.25 2.08 1.79 1.50 1.21 1.03 167 128 102 98 77 68 62 51 37 19 5 -35.39 -23.74 -20.92 -20.35 -18.49 -17.39 -16.59 -15.14 -12.92 -9.55 -6.80 0.017 0.065 0.090 0.096 0.119 0.135 0.148 0.175 0.226 0.333 0.457 82 62 56 55 56 58 59 60 59 53 42 0.99 0.85 0.73 0.72 0.66 0.65 0.63 0.62 0.61 0.59 0.55 -5 -21 -28 -30 -35 -37 -40 -44 -53 -70 -90 30 AT-32033 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 5 V, IC = 2 mA Fmin dB Mag Γopt Ang 0.5[1] 0.9 1.8 2.4 0.52 0.75 1.26 1.60 0.79 0.65 0.33 0.39 15 48 127 -166 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 20 Rn – 0.42 0.30 0.11 0.07 GAIN (dB) Freq. GHz MSG MAG 10 S21 0 0 1 MSG 2 3 4 5 FREQUENCY (GHz) Figure 24. AT-32033 Gains vs. Frequency at Vce = 5 V, Ic = 2 mA. AT-32011 fig 24 AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 20 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.58 0.35 0.31 0.30 0.29 0.30 0.30 0.32 0.35 0.41 0.48 -43 -128 -161 -167 170 158 151 138 121 98 83 31.28 23.51 18.93 18.06 14.74 13.22 12.35 10.85 8.99 6.64 4.90 36.64 14.99 8.84 8.00 5.46 4.58 4.15 3.49 2.82 2.15 1.76 151 103 87 84 72 65 61 53 42 25 9 -38.13 -29.05 -25.30 -24.57 -21.50 -20.06 -19.23 -17.77 -16.03 -13.85 -12.12 0.012 0.035 0.054 0.059 0.084 0.099 0.109 0.129 0.158 0.203 0.248 72 62 64 64 63 61 60 57 52 42 33 0.83 0.42 0.33 0.32 0.30 0.29 0.29 0.28 0.27 0.25 0.24 -21 -40 -40 -40 -44 -47 -50 -56 -64 -80 -100 30 AT-32011 Typical Noise Parameters, MSG Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA Fmin dB Mag Γopt Ang 0.5[1] 0.9 1.8 2.4 1.38 1.50 1.78 1.96 0.18 0.15 0.23 0.34 50 88 176 -156 Rn – 0.20 0.16 0.13 0.12 20 GAIN (dB) Freq. GHz MAG S21 10 MSG 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 1 2 3 4 5 FREQUENCY (GHz) Figure 25. AT-32011 Gains vs. Frequency at Vce = 5 V, Ic = 20 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 20 mA AT-32011 fig 25 Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.55 0.20 0.13 0.12 0.10 0.09 0.10 0.11 0.13 0.18 0.22 -31 -44 -31 -28 -7 5 13 25 36 42 43 30.00 19.91 15.15 14.30 11.03 9.63 8.82 7.49 5.93 4.19 2.98 31.61 9.90 5.72 5.19 3.56 3.03 2.76 2.37 1.98 1.62 1.41 138 95 82 79 68 61 57 50 39 23 8 -37.72 -25.85 -21.01 -20.18 -16.77 -15.19 -14.33 -12.77 -10.90 -8.50 -6.65 0.013 0.051 0.089 0.098 0.145 0.174 0.192 0.230 0.285 0.376 0.465 78 77 75 74 69 66 64 60 54 43 31 0.81 0.56 0.53 0.53 0.52 0.51 0.50 0.49 0.47 0.42 0.37 -16 -19 -22 -23 -30 -33 -36 -42 -51 -67 -86 30 AT-32033 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA Fmin dB Mag Γopt Ang 0.5[1] 0.9 1.8 2.4 1.38 1.50 1.78 1.96 0.25 0.19 0.21 0.39 35 85 -150 -114 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. Rn – 0.30 0.23 0.14 0.19 20 GAIN (dB) Freq. GHz MAG 10 0 MSG S21 0 1 2 3 4 5 FREQUENCY (GHz) Figure 26. AT-32033 Gains vs. Frequency at Vce = 5 V, Ic = 20 mA. AT-32011 fig 26 Ordering Information Part Numbers No. of Devices Comments AT-32011-BLKG AT-32033-BLKG 100 Bulk AT-32011-TR1G AT-32033-TR1G 3000 7" Reel AT-32011-TR2G AT-32033-TR2G 10000 13" Reel Package Dimensions SOT-23 Plastic Package SOT-143 Plastic Package e2 e2 e1 e1 B1 XXX E E1 E e XXX E1 L B C A Notes: XXX-package marking Drawings are not to scale B e C DIMENSIONS (mm) D A1 L SYMBOL A A1 B C D E1 e e1 e2 E L MIN. 0.79 0.000 0.30 0.08 2.73 1.15 0.89 1.78 0.45 2.10 0.45 MAX. 1.20 0.100 0.54 0.20 3.13 1.50 1.02 2.04 0.60 2.70 0.69 For product information and a complete list of distributors, please go to our web site: DIMENSIONS (mm) D A A1 Notes: XXX-package marking Drawings are not to scale www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-2643EN AV02-0796EN - June 9, 2009 SYMBOL A A1 B B1 C D E1 e e1 e2 E L MIN. 0.79 0.013 0.36 0.76 0.086 2.80 1.20 0.89 1.78 0.45 2.10 0.45 MAX. 1.097 0.10 0.54 0.92 0.152 3.06 1.40 1.02 2.04 0.60 2.65 0.69