DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID max TA = +25°C • Footprint of Just 1.3 mm2 • Ultra Low Profile Package - 0.4mm Profile (Note 6) • On Resistance <200mΩ 195mΩ @ VGS = 4.5V 2.11A • Low Gate Threshold Voltage 260mΩ @ VGS = 2.5V 1.83A • Fast Switching Speed • Ultra-Small Surface Mount Package 380mΩ @ VGS = 1.8V 1.51A • ESD Protected Gate 2KV 520mΩ @ VGS = 1.5V 1.29A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • • Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Max RDS(on) 20V Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it • Case: X2-DFN1310-6 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 ideal for high efficiency power management applications. • Load switch D1 D2 G1 G2 Gate Protection Diode S1 Gate Protection Diode S2 Device Symbol ESD PROTECTED TO 2kV Top View Pin-Out Ordering Information (Note 4) Part Number DMN2300UFL4-7 Notes: Marking 23N Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information 23N DMN2300UFL4 Datasheet Number: DS35946 Rev. 2 - 2 23N = Product Type Marking Code 1 of 7 www.diodes.com September 2014 © Diodes Incorporated DMN2300UFL4 Maximum Ratings @TA = +25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 6) TA = +25°C TA = +85°C Unit V V Value 0.53 1.39 238 90 -55 to +150 Unit ID Pulsed Drain Current (Note 7) IDM Thermal Characteristics A A @TA = 25°C unless otherwise specified Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) Power Dissipation Thermal Resistance, Junction to Ambient PD RθJA Operating and Storage Temperature Range Notes: Value 20 ±8 2.11 1.19 6.0 TJ, TSTG W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. P(PK), PEAK TRANSIENT POIWER (W) 100 90 Single Pulse RθJA = 230°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * Rθ JA(t) 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 230°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 DMN2300UFL4 Datasheet Number: DS35946 Rev. 2 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 2 Transient Thermal Resistance 2 of 7 www.diodes.com 10 100 1,000 September 2014 © Diodes Incorporated DMN2300UFL4 Electrical Characteristics @TA = +25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1 10 V µA µA VGS = 0V, ID = 10μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) - - - |Yfs| VSD 40 - 0.7 0.95 195 260 380 520 1.2 V Static Drain-Source On-Resistance 0.45 - VDS = VGS, ID = 250μA VGS = 4.5V, ID = 300mA VGS = 2.5V, ID = 250mA VGS = 1.8V, ID = 100mA VGS = 1.5V, ID = 50mA VDS = 3V, ID = 30mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 64.3 6.1 4.5 70 1.6 0.2 0.2 3.5 2.8 38 13 128.6 12.2 9.0 140 3.2 0.4 0.4 10 10 60 25 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Note: mΩ mS V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω 8. Short duration pulse test used to minimize self-heating effect. 2.0 2.0 VGS = 4.5V VDS = 5V VGS = 2.5V VGS = 1.8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.0V 1.5 VGS = 1.5V 1.0 0.5 1.5 1.0 TA = 150°C 0.5 TA = 125°C VGS = 1.2V TA = 85°C TA = 25°C TA = -55°C 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3 Typical Output Characteristic DMN2300UFL4 Datasheet Number: DS35946 Rev. 2 - 2 5 3 of 7 www.diodes.com 0 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Transfer Characteristic 3 September 2014 © Diodes Incorporated DMN2300UFL4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.4 0.3 0.2 VGS = 2.5V VGS = 4.5V 0.1 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 500mA 1.2 1.0 0.8 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature TA = 125°C TA = 150°C 0.2 TA = 85°C TA = 25°C TA = -55°C 0 0.25 0.5 0.75 1 1.25 1.5 1.75 ID, DRAIN CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Temperature 2 0.8 0.6 0.4 VGS = 2.5V ID = 500mA 0.2 VGS = 4.5V ID = 1.0A 0 -50 2.0 1.2 1.0 1.6 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.4 50 75 100 125 150 0 25 -25 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature -25 ID = 1mA 0.8 0.6 0.6 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 1.0A 0.6 -50 VGS = 4.5V 2 1.6 1.4 0.8 ID = 250µA 0.4 0 0 25 50 75 100 125 150 -50 -25 TA, AMBIENT TEMPERATURE (°C) Fig. 9 Gate Threshold Variation vs. Ambient Temperature Datasheet Number: DS35946 Rev. 2 - 2 TA = 25°C 0.8 0.4 0.2 DMN2300UFL4 1.2 4 of 7 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 10 Diode Forward Voltage vs. Current September 2014 © Diodes Incorporated DMN2300UFL4 1,000 100,000 IGSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) TA = 125°C 100 TA = 85°C 10 TA = 25°C TA = -55°C 1 10,000 TA = 150°C TA = 125°C 1,000 TA = 85°C TA = -55°C 10 1 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Leakage Current vs. Drain-Source Voltage 20 TA = 25°C 100 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Fig.12 Leakage Current vs. Gate-Source Voltage VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 13 Gate-Charge Characteristics DMN2300UFL4 Datasheet Number: DS35946 Rev. 2 - 2 3 5 of 7 www.diodes.com September 2014 © Diodes Incorporated DMN2300UFL4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. X2-DFN1310-6 Dim Min Max Typ A 0.40 A1 0 0.05 0.02 A3 0.13 b 0.10 0.20 0.15 D 1.25 1.38 1.30 d 0.25 D2 0.30 0.50 0.40 E 0.95 1.075 1.00 e 0.35 E2 0.30 0.50 0.40 f 0.10 L 0.20 0.30 0.25 Z 0.05 All Dimensions in mm A1 A A3 Z R0 B D2 .15 0 E2 E d L e d f z D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. G2 X2 Y2 G1 b Y1 G3 DMN2300UFL4 Datasheet Number: DS35946 Rev. 2 - 2 a X1 Dimensions G1 G2 G3 X1 X2 Y1 Y2 a b 6 of 7 www.diodes.com Value (in mm) 0.16 0.17 0.15 0.52 0.20 0.52 0.375 0.09 0.06 September 2014 © Diodes Incorporated DMN2300UFL4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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