PHILIPS BD829 Npn power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D067
BD825; BD829
NPN power transistors
Product specification
Supersedes data of 1997 Jun 20
File under Discrete Semiconductors, SC04
1998 May 29
Philips Semiconductors
Product specification
NPN power transistors
BD825; BD829
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V).
DESCRIPTION
1
emitter
2
collector, connected to metal part of
mounting surface
3
base
APPLICATIONS
• General purpose
• Driver stages in hi-fi amplifiers and television circuits.
handbook, halfpage
DESCRIPTION
NPN power transistor in a TO-202; SOT128B plastic
package. PNP complements: BD826 and BD830.
2
3
1
1 2 3
Fig.1
MAM305
Simplified outline (TO-202; SOT128B)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
TYP.
MAX.
−
−
45
V
−
−
100
V
BD825
−
−
45
V
BD829
−
−
80
V
BD829
collector-emitter voltage
ICM
peak collector current
Ptot
total power dissipation
open base
−
−
1.5
A
Tamb ≤ 25 °C
−
−
2
W
Tmb ≤ 50 °C
−
−
8
W
hFE
DC current gain
IC = 150 mA; VCE = 2 V
95
−
165
fT
transition frequency
IC = 50 mA; VCE = 5 V; f = 100 MHz
−
250
−
1998 May 29
UNIT
open emitter
BD825
VCEO
MIN.
2
MHz
Philips Semiconductors
Product specification
NPN power transistors
BD825; BD829
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BD825
−
45
V
BD829
−
100
V
BD825
−
45
V
BD829
−
80
V
−
5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
1.5
A
IBM
peak base current
−
500
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
2
W
Tmb ≤ 50 °C
−
8
W
open collector
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-mb
thermal resistance from junction to mounting base
1998 May 29
in free air
3
VALUE
UNIT
62.5
K/W
12.5
K/W
Philips Semiconductors
Product specification
NPN power transistors
BD825; BD829
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
IE = 0; VCB = 30 V
TYP.
−
MAX.
UNIT
100
nA
ICBO
collector cut-off current
IE = 0; VCB = 30 V; Tj = 125 °C
−
−
10
µA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
−
100
nA
hFE
DC current gain
VCE = 2 V; see Fig.2
IC = 5 mA
40
−
−
IC = 150 mA
95
−
165
IC = 500 mA
25
−
−
VCEsat
collector-emitter saturation voltage IC = 500 mA
−
−
500
mV
VBE
base-emitter voltage
IC = 500 mA; VCE = 2 V
−
−
1
V
fT
transition frequency
IC = 50 mA; VCE = 5 V; f = 100 MHz
−
250
−
MHz
MBH729
160
handbook, full pagewidth
VCE = 2 V
hFE
120
80
40
0
10−1
1
10
Fig.2 DC current gain; typical values.
1998 May 29
4
102
IC (mA)
103
Philips Semiconductors
Product specification
NPN power transistors
BD825; BD829
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
SOT128B
E1
c1
P
P1
HE
D
L1
L2
L
1
2
3
bp
c
w M
Q
e1
A
e
E
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
c1
D
E
E1
e
e1
HE
L
L1
L2(1)
max
P
P1
Q
w
mm
4.6
4.4
0.8
0.6
0.65
0.5
0.56
0.46
8.6
8.4
10.1
9.9
10.4
10.0
5.08
2.54
24.2
23.8
13.3
12.2
2.4
2.0
2.5
3.8
3.6
3.9
3.7
1.7
1.5
0.25
Note
1. Plastic flash allowed within this zone
OUTLINE
VERSION
SOT128B
1998 May 29
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
TO-202
5
Philips Semiconductors
Product specification
NPN power transistors
BD825; BD829
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 May 29
6
Philips Semiconductors
Product specification
NPN power transistors
BD825; BD829
NOTES
1998 May 29
7
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
135106/1200/03/pp8
Date of release: 1998 May 29
Document order number:
9397 750 03924
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