= ----- == -’ = RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz LF2805A Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation 500 MHz to 1400 MHz Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C Parameter Drain-Source Breakdown Voltage Symbol Min BV,,, 65 - V V,,=O.O V, 1,,=2.0 mA - 1.0 mA V,,=28.0 V, V,,=O.O V 1.0 p-4 v,,=20 6.0 V V&O.0 V, l,,=lO.O mA - mS V&O.0 V, i&00.0 V, F-l.0 MHz Drain-Source Leakage Current ‘Dss Gate-Source Leakage Current IGSS Gate Threshold Voltage VGSCTW 2.0 80 Max Units lest Conditions v, v,,=o.o v mA, AVGs=l .O V, 80 us ForwardTransconductance GM Input Capacitance C ISS 7 PF V&8.0 Output Capacitance Coss 5 PF V,,=28.0 V, F-1 .OMHz Reverse Capacitance CRSS pF V,,=28.0 V, F=l .O MHz 2.4 Puke Power Gain GP 10 - dB V,,d8.0 V, I,,=50 mA, PO,+0 W, F=l .O GHz Drain Efficiency ‘1D 50 - % V,,=28.0 V, I,,=50 mA, P,s5.0 W, F=l .OGHz VSWR-T - 2O:l - V,,=28.0 V, I,,=50 mA, P,&%O W, F=l .OGHz Load Mismatch Tolerance M/A-COM, Inc. North America: Specifications Subject to Change Without Notice. 9-71 Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 8 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 LF2805A RF MOSFET Power Transistor, 5W, 28V v2.00 Typical Broadband Performance CAPACITANCES Curves POWER OUTPUT vs VOLTAGE 7 vs VOLTAGE F=l .O GHz P,,=O.5 W I,,=50 F=l .O MHz mA 7 6 - EFFICIENCY GAIN vs FREQUENCY V,,=28 V I,,=50 mA P0,,=5.0 V,,=28 W vs FREQUENCY V I,,=50 mA P,,=5.0 W 20 15 s ‘0 210 z 5 - 500 1400 1000 700 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT V,,=28 I;- 3 i? vs POWER V I,,=50 1400 1250 1000 750 OUTPUT mA p-p= 21 0 0 0.05 02 0.4 0.6 0.6 1 POWER INPUT (W) Specifications Subject to Change Without Notice. M/A-COM, 9-72 North America: Tel. (800) Fax (800) 366-2266 618-8883 D Asia/Pacific: Tel. Fax +81 (03) +81 (03) 3226-1671 3226-1451 n Europe: Tel. Fax +44 +44 (1344) (1344) Inc. 869 595 300 020 RF MOSFET Power Transistor, LF2805A 5W. 28V v2.00 Typical Device Impedance Frequency (MHz) q,, (OHMS) z LOAD (OHMS) 500 4.3 - j 29.0 27.3 + j 28.6 1000 2.2 - j 2.75 8.0 + j 16.0 1400 2.8 + j 3.0 9.4+j v,,=28 V, iDo= mA, P,,=5.0 10.6 Watts Z,, is the series equivalent input impedance of the device from gate to source. $ the optimum series equivalent load impedance as measured from drain to ground. z, OAB RF Test Fixture POWER SUPPLY JACK <3 PLACES) r 7 ,015 uf (4 PLACES> LlK OHMS l/8 WATT SUBS1 RATE .031’ THICK, Er = 2.54 10 TURNS UF 18 AWG 50 OHM RF CUNNECTOR WIRE (2 PLACES) INPUT 560 L-560 pf L-,180 I- 1.740 Specifications Subject to Change Without Notice. 9-73 M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: pf Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020