Micronas HAL516UA-A Hall-effect sensor family Datasheet

Hardware
Documentation
Data Sheet
®
HAL 5xy
Hall-Effect Sensor Family
Edition Jan. 11, 2010
DSH000020_004E
HAL 5xy
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
2
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
Contents
Page
Section
Title
4
4
4
5
5
5
6
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
Introduction
Features:
Family Overview
Marking Code
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability and Welding
7
2.
Functional Description
8
8
13
13
13
13
14
15
16
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.7.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Magnetic Characteristics Overview
22
22
24
26
28
30
32
34
36
38
40
42
44
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
4.7.
4.8.
4.9.
4.10.
4.11.
4.12.
Type Description
HAL 501
HAL 502
HAL 503
HAL 504
HAL 505
HAL 506
HAL 507
HAL 508
HAL 509
HAL 516
HAL 519
HAL 523
46
46
46
46
46
5.
5.1.
5.2.
5.3.
5.4.
Application Notes
Ambient Temperature
Extended Operating Conditions
Start-Up Behavior
EMC and ESD
48
6.
Data Sheet History
Micronas
Jan. 11. 2010; DSH000020_004EN
3
HAL 5xy
DATA SHEET
1.2. Family Overview
Hall Effect Sensor Family
in CMOS technology
Release Note: Revision bars indicate significant
changes to the previous edition.
The types differ according to the magnetic flux density
values for the magnetic switching points and the temperature behavior of the magnetic switching points,
and the mode of switching.
1. Introduction
The HAL 5xy family consists of different Hall switches
produced in CMOS technology. All sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain output transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accordingly, the output transistor is switched on or off.
The sensors of this family differ in the switching behavior and the switching points.
The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are
robust against mechanical stress effects.
The sensors are designed for industrial and automotive applications and operate with supply voltages from
3.8 V to 24 V in the ambient temperature range from
−40 °C up to 150 °C.
All sensors are available in the SMD-package
SOT89B-1 and in the leaded versions TO92UA-1 and
TO92UA-2.
1.1. Features:
Type
Switching
Behavior
Sensitivity
see
Page
501
bipolar
very high
22
502
unipolar
low
24
503
unipolar
high
26
504
unipolar
medium
28
505
latching
low
30
506
unipolar
high
32
507
unipolar
medium
34
508
unipolar
medium
36
509
unipolar
low
38
516
unipolar with
inverted output
high
40
519
unipolar with
inverted output
(north polarity)
high
42
523
unipolar
low
44
– switching offset compensation at typically 62 kHz
– operates from 3.8 V to 24 V supply voltage
Latching Sensors:
– overvoltage protection at all pins
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust regarding
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– constant switching points over a wide supply voltage range
– the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient
of the magnetic characteristics
Bipolar Switching Sensors:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic
field is removed again. Some sensors will change the
output state and some sensors will not.
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to ISO 7637
4
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
Unipolar Switching Sensors:
1.4. Operating Junction Temperature Range
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
Unipolar Switching Sensors with Inverted Output:
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
Unipolar Switching Sensors with Inverted Output
Sensitive to North Pole:
A: TJ = −40 °C to +170 °C
K: TJ = −40 °C to +140 °C
Note: Due to the high power dissipation at high current
consumption, there is a difference between the
ambient temperature (TA) and junction temperature. Please refer to Section 5.1. on page 46 for
details.
1.5. Hall Sensor Package Codes
HALXXXPA-T
The output turns high with the magnetic north pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not
respond to the magnetic south pole on the branded
side.
Temperature Range: A or K
Package: SF for SOT89B-1
UA for TO92UA
Type: 5xy
1.3. Marking Code
Example: HAL505UA-K
All Hall sensors have a marking on the package surface (branded side). This marking includes the name
of the sensor and the temperature range.
→ Type: 505
→ Package: TO92UA
→ Temperature Range: TJ = −40 °C to +140 °C
Type
Temperature Range
A
K
HAL 501
501A
501K
HAL 502
502A
502K
HAL 503
503A
503K
HAL 504
504A
504K
HAL 505
505A
505K
HAL 506
506A
506K
HAL 507
507A
507K
HAL 508
508A
508K
HAL 509
509A
509K
HAL 516
516A
516K
HAL 519
519A
519K
HAL 523
523A
523K
Micronas
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for
Hall Sensors”.
Jan. 11. 2010; DSH000020_004EN
5
HAL 5xy
DATA SHEET
1.6. Solderability and Welding
Soldering
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1 VDD
3
2, 4
OUT
GND
Fig. 1–1: Pin configuration
6
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
2. Functional Description
HAL 5xx
HAL
5xy
The HAL 5xx sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching
behavior of output without bouncing.
Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Thus, an internal oscillator provides a
two-phase clock. The Hall voltage is sampled at the
end of the first phase. At the end of the second phase,
both sampled and actual Hall voltages are averaged
and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero
and 1/fosc.
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Short Circuit &
Overvoltage
Protection
Comparator
OUT
Output
Switch
3
Clock
GND
2
Fig. 2–1: HAL 5xx block diagram
fosc
t
B
BON
t
Shunt protection devices clamp voltage peaks at the
output pin and VDD pin together with external series
resistors. Reverse current is limited at the VDD pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD pin for
reverse voltages ranging from 0 V to −15 V.
VOUT
VOH
VOL
t
IDD
1/fosc = 16 μs
tf
t
Fig. 2–2: Timing diagram
Micronas
Jan. 11. 2010; DSH000020_004EN
7
HAL 5xy
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Ordering code: SF
Weight approximately 0.034 g
8
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
Fig. 3–2:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
Micronas
Jan. 11. 2010; DSH000020_004EN
9
HAL 5xy
DATA SHEET
Fig. 3–3:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
10
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
Fig. 3–4:
TO92UA-1: Dimensions ammopack inline, spread
Micronas
Jan. 11. 2010; DSH000020_004EN
11
HAL 5xy
DATA SHEET
Fig. 3–5:
TO92UA-2: Dimensions ammopack inline, not spread
12
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
SOT89B-1
TO92UA-1/-2
y
0.95 mm nominal
1.0 mm nominal
A4
0.3 mm nominal
0.3 mm nominal
D1
see drawing
3.05 mm +/- 0.05 mm
H1
not applicable
min. 21 mm
max. 23.1 mm
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−15
281)
V
VO
Output Voltage
3
−0.3
281)
V
IO
Continuous Output On Current
3
−
501)
mA
TJ
Junction Temperature Range
−40
1702)
°C
1)
2)
as long as TJmax is not exceeded
t < 1000 h
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
Micronas
Jan. 11. 2010; DSH000020_004EN
13
HAL 5xy
DATA SHEET
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
3.8
24
V
IO
Continuous Output On Current
3
0
20
mA
VO
Output Voltage
(output switched off)
3
0
24
V
14
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics
for TJ = 25 °C and VDD = 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
1
2.3
3
4.2
mA
TJ = 25 °C
IDD
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
−
28
32
V
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage
3
−
130
280
mV
IOL = 20 mA , TJ = 25 °C
VOL
Output Voltage over
Temperature Range
3
−
130
400
mV
IOL = 20 mA
IOH
Output Leakage Current
3
−
0.06
0.1
μA
Output switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
IOH
Output Leakage Current over
Temperature Range
3
−
−
10
μA
Output switched off,
TJ ≤150 °C, V OH = 3.8 to 24 V
fosc
Internal Oscillator
Chopper Frequency
−
−
62
−
kHz
ten(O)
Enable Time of Output after
Setting of VDD
1
−
50
−
μs
VDD = 12 V 1)
tr
Output Rise Time
3
−
75
400
ns
tf
Output Fall Time
3
−
50
400
ns
VDD = 12 V,
RL = 820 Ohm,
CL = 20 pF
RthJSB
case
SOT89B-1
Thermal Resistance Junction
to Substrate Backside
−
−
150
200
K/W
RthJA
case
TO92UA-1,
TO92UA-2
Thermal Resistance Junction
to Soldering Point
−
−
150
200
K/W
1)
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size see Fig. 3–6
B > BON + 2 mT or B < BOFF − 2 mT for HAL50x, B > BOFF + 2 mT or B < BON − 2 mT for HAL51x
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
Micronas
Jan. 11. 2010; DSH000020_004EN
15
HAL 5xy
DATA SHEET
3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Parameter
Switching
Type
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
−0.8
0.6
2.5
−2.5
−0.8
0.8
0.5
1.4
2
mT
25 °C
−0.5
0.5
2.3
−2.3
−0.7
0.5
0.5
1.2
1.9
mT
170 °C
−1.5
0.7
3
−2.5
−0.2
2
0.4
0.9
1.8
mT
HAL 502
−40 °C
1
2.8
5
−5
−2.8
−1
4.5
5.6
7.2
mT
latching
25 °C
1
2.6
4.5
−4.5
−2.6
−1
4.5
5.2
7
mT
170 °C
0.9
2.3
4.3
−4.3
−2.3
−0.9
3.5
4.6
6.8
mT
HAL 503
−40 °C
6.4
8.6
10.8
−10.8
−8.6
−6.4
14.6
17.2
20.6
mT
latching
25 °C
6
8
10
−10
−8
−6
13.6
16
18
mT
170 °C
4
6.4
8.9
−8.9
−6
−4
11
12.4
16
mT
HAL 504
−40 °C
10.3
13
15.7
5.3
7.5
9.6
4.4
5.5
6.5
mT
unipolar
25 °C
9.5
12
14.5
5
7
9
4
5
6.5
mT
170 °C
8.5
10.2
13.7
4.2
5.9
8.5
3.2
4.3
6.4
mT
HAL 505
−40 °C
11.8
15
18.3
−18.3
−15
−11.8
26
30
34
mT
latching
25 °C
11
13.5
17
−17
−13.5
−11
24
27
32
mT
170 °C
9.4
11.7
16.1
−16.1
−11.7
−9.4
20
23.4
31.3
mT
HAL 506
−40 °C
4.3
5.9
7.7
2.1
3.8
5.4
1.6
2.1
2.8
mT
unipolar
25 °C
3.8
5.5
7.2
2
3.5
5
1.5
2
2.7
mT
170 °C
3.2
4.6
6.8
1.7
3
5.2
0.9
1.6
2.6
mT
HAL 507
−40 °C
15.5
19.6
22.5
14.0
17.1
21.5
1.6
2.5
5.2
mT
unipolar
25 °C
15.0
18.3
20.7
13.5
16.2
19.0
1.5
2.1
2.7
mT
170 °C
10.5
13.7
20.0
9.0
12.3
18.0
0.8
1.4
2.4
mT
HAL 508
−40 °C
15.5
19
21.9
14
16.7
20
1.6
2.3
2.8
mT
unipolar
25 °C
15
18
20.7
13.5
16
19
1.5
2
2.7
mT
170 °C
12.7
15.3
20
11.4
13.6
18.3
1
1.7
2.6
mT
HAL 509
−40 °C
23.1
27.4
31.1
19.9
23.8
27.2
2.9
3.6
3.9
mT
unipolar
25 °C
23.1
26.8
30.4
19.9
23.2
26.6
2.8
3.5
3.9
mT
170 °C
21.3
25.4
28.9
18.3
22.1
25.3
2.5
3.3
3.8
mT
HAL 516
−40 °C
2.1
3.8
5.4
4.3
5.9
7.7
1.6
2.1
2.8
mT
unipolar
25 °C
2
3.5
5
3.8
5.5
7.2
1.5
2
2.7
mT
inverted
170 °C
1.7
3
5.2
3.2
4.6
6.8
0.9
1.6
2.6
mT
HAL 501
bipolar
Note: For detailed descriptions of the individual types, see pages 22 and following.
16
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
Magnetic Characteristics Overview, continued
Sensor
Parameter
Switching
Type
TJ
On pointON
Off pointOFF
Hysteresis BHYS
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−5.4
−3.8
−2.1
−7.7
−5.9
−4.3
1.6
2.1
2.8
mT
−5
−3.6
−2
−7.2
−5.5
−3.8
1.5
1.9
2.7
mT
HAL 519
−40 °C
unipolar
25 °C
inverted
170 °C
−5.2
−3.0
−1.5
−6.8
−4.6
−2.8
0.9
1.6
2.6
mT
HAL 523
−40 °C
28
34.5
42
18
24
30
7
10.5
14
mT
unipolar
25 °C
28
34.5
42
18
24
30
7
10.5
14
mT
170 °C
28
34.5
42
18
24
30
7
10.5
14
mT
Note: For detailed descriptions of the individual types, see pages 22 and following
Micronas
Jan. 11. 2010; DSH000020_004EN
17
HAL 5xy
DATA SHEET
mA
25
mA
5
HAL 5xx
HAL 5xx
20
IDD
IDD
4
15
VDD = 24 V
10
VDD = 12 V
3
5
2
0
VDD = 3.8 V
TA = −40 °C
−5
TA = 25 °C
1
TA = 170 °C
−10
−15
−15
−5
5
15
0
−50
35 V
25
50
100
150
VDD
TA
Fig. 3–7: Typical supply current
versus supply voltage
Fig. 3–9: Typical supply current
versus ambient temperature
mA
5.0
kHz
100
HAL 5xx
IDD
4.0
fosc
TA = −40 °C
3.5
HAL 5xx
VDD = 3.8 V
80
70
TA = 25 °C
60
3.0
TA = 100 °C
2.5
50
VDD = 4.5 V ... 24 V
TA = 170 °C
2.0
40
1.5
30
1.0
20
0.5
10
0.0
200 °C
90
4.5
1
2
3
4
5
6
7
8V
0
−50
VDD
Fig. 3–8: Typical supply current
versus supply voltage
18
0
0
50
100
150
200 °C
TA
Fig. 3–10: Typ. internal chopper frequency
versus ambient temperature
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
kHz
100
mV
400
HAL 5xx
HAL 5xx
IO = 20 mA
90
fosc
350
VOL
80
300
70
TA = 170 °C
TA = 25 °C
250
60
TA = −40 °C
50
TA = 100 °C
200
TA = 170 °C
40
TA = 25 °C
150
TA = −40 °C
30
100
20
50
10
0
0
5
10
15
20
25
30 V
0
0
5
10
15
VDD
25
30 V
VDD
Fig. 3–11: Typ. internal chopper frequency
versus supply voltage
kHz
100
20
HAL 5xx
Fig. 3–13: Typical output low voltage
versus supply voltage
mV
600
HAL 5xx
IO = 20 mA
90
fosc
VOL 500
80
70
TA = 25 °C
400
TA = −40 °C
60
50
TA = 170 °C
300
TA = 170 °C
40
TA = 100 °C
200
30
TA = 25 °C
20
100
TA = −40 °C
10
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
0
3.0
VDD
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 3–12: Typ. internal chopper frequency
versus supply voltage
Micronas
3.5
Fig. 3–14: Typical output low voltage
versus supply voltage
Jan. 11. 2010; DSH000020_004EN
19
HAL 5xy
DATA SHEET
mV
400
μΑ
102
HAL 5xx
IO = 20 mA
VDD = 3.8 V
IOH
300
HAL 5xx
101
I OH
VDD = 4.5 V
100
VOH = 24 V
VDD = 24 V
10−1
200
10−2
VOH = 3.8 V
10−3
100
10−4
0
−50
0
50
100
150
10−5
−50
200 °C
0
50
100
TA
Fig. 3–17: Typ. output leakage current
versus ambient temperature
dB μV
30
HAL 5xx
104
HAL 5xx
VP = 12 V
TA = 25 ˚C
103
IOH
102
101
200 °C
TA
Fig. 3–15: Typ. output low voltage
versus ambient temperature
μΑ
150
IDD
20
Quasi-PeakMeasrement
10
max. spurious
signals
TA = 170 °C
100
TA = 150 °C
10−1
TA = 100 °C
0
10−2
10−3
10−4
TA = 25 °C
-10
TA = −40 °C
-20
10−5
10−6
15
20
25
30
35 V
-30
0.01
20
1
10
100
1000 MHz
f
VOH
Fig. 3–16: Typ. output high current
versus output voltage
0.10
Fig. 3–18: Typ. spectrum of supply current
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
dB μV
HAL 5xx
80
VP = 12 V
TA = 25 °C
70
Quasi-PeakMeasrement
test circuit 2
VDD
60
50
max. spurious
signals
40
30
20
10
0
0.01
0.10
1
10
100
1000 MHz
f
Fig. 3–19: Typ. spectrum of supply current
Micronas
Jan. 11. 2010; DSH000020_004EN
21
HAL 501
DATA SHEET
4. Type Description
Applications
4.1. HAL 501
The HAL 501 is the optimal sensor for applications
with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
The HAL 501 is the most sensitive sensor of this family
with bipolar switching behavior (see Fig. 4.1.).
– applications with large air gap or weak magnets,
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic
field is removed again. Some sensors will change the
output state and some sensors will not.
– rotating speed measurement,
– commutation of brushless DC motors, and
– CAM shaft sensors, and
– magnetic encoders.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: bipolar
VOL
– very high sensitivity
BOFF
– typical BON: 0.5 mT at room temperature
– typical BOFF: −0.7 mT at room temperature
0
B
BON
Fig. 4–1: Definition of magnetic switching points for
HAL 501
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset BOFFSET
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
−0.8
0.6
2.5
−2.5
−0.8
0.8
0.5
1.4
2
25 °C
−0.5
0.5
2.3
−2.3
−0.7
0.5
0.5
1.2
1.9
140 °C
−1.2
0.6
2.8
−2.5
−0.5
1.3
0.5
1.1
1.8
0
mT
170 °C
−1.5
0.7
3
−2.5
−0.2
2
0.4
0.9
1.8
0.2
mT
−0.1
−1.4
−0.1
mT
1.4
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
22
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 501
DATA SHEET
mT
3
BON
BOFF
mT
3
HAL 501
HAL 501
BONmax
BON
BOFF
2
2
VDD = 3.8 V
BOFFmax
VDD = 4.5 ... 24 V
1
1
BON
BONtyp
0
0
BOFFtyp
−1
−1
BOFF
TA = −40 °C
BONmin
TA = 25 °C
−2
−2
TA = 100 °C
BOFFmin
TA = 170 °C
−3
0
5
10
15
20
25
30 V
−3
−50
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
BON
BOFF
50
100
150
200 °C
TA, TJ
VDD
mT
3
0
HAL 501
Fig. 4–4: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
2
BON
1
0
−1
BOFF
TA = −40 °C
TA = 25 °C
−2
TA = 100 °C
TA = 170 °C
−3
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–3: Typ. Magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
23
HAL 502
DATA SHEET
4.2. HAL 502
Applications
The HAL 502 is the most sensitive latching sensor of
this family (see Fig. 4–5).
The HAL 502 is the optimal sensor for all applications
with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
– applications with large air gap or weak magnets,
– rotating speed measurement,
– commutation of brushless DC motors,
– CAM shaft sensors, and
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
– magnetic encoders.
Magnetic Features:
VO
Output Voltage
– switching type: latching
BHYS
– high sensitivity
– typical BON: 2.6 mT at room temperature
VOL
– typical BOFF: −2.6 mT at room temperature
BOFF
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
0
B
BON
Fig. 4–5: Definition of magnetic switching points for
the HAL 502
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
1
2.8
5
−5
−2.8
−1
4.5
5.6
7.2
−
0
−
mT
25 °C
1
2.6
4.5
−4.5
−2.6
−1
4.5
5.2
7
−1.5
0
1.5
mT
140 °C
0.9
2.4
4.3
−4.3
−2.4
−0.9
3.7
4.8
6.8
−
0
−
mT
170 °C
0.9
2.3
4.3
−4.3
−2.3
−0.9
3.5
4.6
6.8
−
0
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
24
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 502
DATA SHEET
mT
6
mT
6
HAL 502
HAL 502
BONmax
BON
BOFF
BON
BOFF
4
BON
4
BONtyp
2
2
BONmin
TA = −40 °C
VDD = 3.8 V
TA = 25 °C
TA = 100 °C
0
0
VDD = 4.5 ... 24 V
TA = 170 °C
BOFFmax
−2
−2
BOFF
−4
BOFFtyp
−4
BOFFmin
−6
0
5
10
15
20
25
30 V
−6
−50
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
BON
BOFF
50
100
150
200 °C
TA, TJ
VDD
mT
6
0
HAL 502
Fig. 4–8: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
4
BON
2
TA = −40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
−2
BOFF
−4
−6
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
25
HAL 503
DATA SHEET
4.3. HAL 503
Applications
The HAL 503 is a latching sensor (see Fig. 4–9).
The HAL 503 is the optimal sensor for applications
with alternating magnetic signals such as:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifters.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Output Voltage
VO
Magnetic Features:
BHYS
– switching type: latching
– medium sensitivity
VOL
– typical BON: 7.6 mT at room temperature
BOFF
– typical BOFF: −7.6 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
0
B
BON
Fig. 4–9: Definition of magnetic switching points for
the HAL 503
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
6.4
8.4
10.8
−10.8
−8.6
−6.4
14.6
17
20.6
−
−0.1
−
mT
6
7.6
10
−10
−7.6
−6
13.6
15.2
18
−1.5
0
1.5
mT
140 °C
4.4
6.7
9.2
−9.2
−6.4
−4.4
11.5
13.1
16.5
−
0.1
−
mT
170 °C
4
6.4
8.9
−8.9
−6
−4
11
12.4
16
−
0.2
−
mT
−40 °C
25 °C
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
26
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 503
DATA SHEET
mT
12
mT
12
HAL 503
HAL 503
BONmax
BON
BON
BOFF
BON
BOFF
8
8
BONtyp
4
4
BONmin
TA = −40 °C
TA = 25 °C
0
VDD = 3.8 V
0
TA = 100 °C
VDD = 4.5... 24 V
TA = 170 °C
−4
BOFFmax
-4
BOFFtyp
−8
-8
BOFF
−12
0
5
10
15
20
BOFFmin
25
30 V
−12
−50
Fig. 4–10: Typ. magnetic switching points
versus supply voltage
HAL 503
BON
BON
BOFF
50
100
150
200 °C
TA, TJ
VDD
mT
12
0
Fig. 4–12: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
8
TA = −40 °C
4
TA = 25 °C
TA = 100 °C
0
TA = 170 °C
−4
−8
BOFF
−12
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
27
HAL 504
DATA SHEET
4.4. HAL 504
Applications
The HAL 504 is a unipolar switching sensor (see
Fig. 4–13).
The HAL 504 is the optimal sensor for applications
with one magnetic polarity such as:
– solid state switches,
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: unipolar,
VOL
– medium sensitivity
– typical BON: 12 mT at room temperature
0
– typical BOFF: 7 mT at room temperature
BOFF
B
BON
Fig. 4–13: Definition of magnetic switching points for
the HAL 504
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz.
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
10.3
13
15.7
5.3
7.5
9.6
4.4
5.5
6.5
−
10.2
−
mT
25 °C
9.5
12
14.5
5
7
9
4
5
6.5
7.2
9.5
11.8
mT
140 °C
8.7
10.6
13.9
4.4
6.1
8.6
3.4
4.5
6.4
−
8.4
−
mT
170 °C
8.5
10.2
13.7
4.2
5.9
8.5
3.2
4.3
6.4
−
8
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
28
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 504
DATA SHEET
mT
18
BON
BOFF
mT
18
HAL 504
16
BON
BOFF
16
BONmax
14
14
BON
12
12
10
10
8
8
BONtyp
BONmin
BOFFmax
BOFFtyp
6
6
TA = −40 °C
4
BOFF
BOFFmin
4
TA = 25 °C
TA = 100 °C
2
VDD = 3.8 V
2
VDD = 4.5 ... 24 V
TA = 170 °C
0
0
5
10
15
20
25
30 V
0
−50
Fig. 4–14: Typ. magnetic switching points
versus supply voltage
mT
18
0
50
100
150
200 °C
TA, TJ
VDD
BON
BOFF
HAL 504
Fig. 4–16: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
HAL 504
16
14
12
BON
10
8
BOFF
6
TA = −40 °C
4
TA = 25 °C
TA = 100 °C
2
TA = 170 °C
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–15: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
29
HAL 505
DATA SHEET
4.5. HAL 505
Applications
The HAL 505 is a latching sensor (see Fig. 4–17).
The HAL 505 is the optimal sensor for applications
with alternating magnetic signals such as:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifters.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: latching,
VOL
– low sensitivity
– typical BON: 13.5 mT at room temperature
BOFF
– typical BOFF: −13.5 mT at room temperature
0
B
BON
Fig. 4–17: Definition of magnetic switching points for
the HAL 505
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
11.8
15
18.3
-18.3
-15
-11.8
26
30
34
−
0
−
mT
25 °C
11
13.5
17
-17
-13.5
-11
24
27
32
-1.5
0
1.5
mT
140 °C
9.7
12
16.3
-16.3
-12
-9.7
21
24.2
31.3
−
0
−
mT
170 °C
9.4
11.7
16.1
-16.1
-11.7
-9.4
20
23.4
31.3
−
0
−
mT
−40 °C
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
30
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 505
DATA SHEET
mT
20
HAL 505
mT
20
HAL 505
BONmax
BON
BON 15
BOFF
BON 15
BOFF
BONtyp
10
10
BONmin
5
5
TA = −40 °C
TA = 25 °C
0
VDD = 4.5 ... 24 V
TA = 100 °C
−5
VDD = 3.8 V
0
−5
TA = 170 °C
−10
−10
−15
−15
BOFFmax
BOFFtyp
−20
BOFF
0
5
10
15
20
25
30 V
−20
−50
Fig. 4–18: Typ. magnetic switching points
versus supply voltage
HAL 505
BON
BON 15
BOFF
0
50
100
150
200 °C
TA, TJ
VDD
mT
20
BOFFmin
Fig. 4–20: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
10
TA = −40 °C
5
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
−5
−10
−15
−20
3.0
BOFF
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–19: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
31
HAL 506
DATA SHEET
4.6. HAL 506
Applications
The HAL 506 is the most sensitive unipolar switching
sensor of this family (see Fig. 4–21).
The HAL 506 is the optimal sensor for all applications
with one magnetic polarity and weak magnetic amplitude at the sensor position such as:
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– applications with large air gap or weak magnets,
– solid state switches,
– contactless solution to replace microswitches,
– position and end point detection, and
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
– rotating speed measurement.
In the HAL 5xx family, the HAL 516 is a sensor with the
same magnetic characteristics but with an inverted
output characteristic.
Output Voltage
VO
Magnetic Features:
BHYS
– switching type: unipolar,
– high sensitivity
VOL
– typical BON: 5.5 mT at room temperature
0
– typical BOFF: 3.5 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
BOFF
B
BON
Fig. 4–21: Definition of magnetic switching points for
the HAL 506
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD =3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
4.3
5.9
7.7
2.1
3.8
5.4
1.6
2.1
2.8
−
4.8
−
mT
25 °C
3.8
5.5
7.2
2
3.5
5
1.5
2
2.7
3.8
4.5
6.2
mT
140 °C
3.4
4.8
6.9
1.8
3.1
5.1
1
1.7
2.6
−
4
−
mT
170 °C
3.2
4.6
6.8
1.7
3
5.2
0.9
1.6
2.6
−
3.8
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
32
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 506
DATA SHEET
mT
8
mT
8
HAL 506
HAL 506
BONmax
BON
BOFF
7
BON
BOFF
BON
6
7
6
5
5
4
4
3
3
BOFF
TA = −40 °C
BONmin
BOFFtyp
BOFFmin
TA = 25 °C
2
2
TA = 100 °C
1
0
0
5
10
15
20
VDD = 4.5 ... 24 V
25
0
−50
30 V
0
50
100
150
200 °C
TA, TJ
Fig. 4–22: Typ. magnetic switching points
versus supply voltage
mT
8
VDD = 3.8 V
1
TA = 170 °C
VDD
BON
BOFF
BONtyp
BOFFmax
HAL 506
7
Fig. 4–24: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BON
6
5
4
3
TA = −40 °C
2
BOFF
TA = 25 °C
TA = 100 °C
1
TA = 170 °C
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–23: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
33
HAL 507
DATA SHEET
4.7. HAL 507
Applications
The HAL 507 is a unipolar switching sensor (see
Fig. 4–25).
The HAL 507 is the optimal sensor for applications
with one magnetic polarity such as:
– solid state switches,
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: unipolar
VOL
– medium sensitivity
– typical BON: 18.3 mT at room temperature
0
– typical BOFF: 16.2 mT at room temperature
BOFF
B
BON
Fig. 4–25: Definition of magnetic switching points for
the HAL 507
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1700 ppm/K
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
15.5
19.6
22.5
14.0
17.1
21.5
1.6
2.5
5.2
−
18.3
−
mT
25 °C
15.0
18.3
20.7
13.5
16.2
19.0
1.5
2.1
2.7
−
17.2
−
mT
140 °C
11.5
14.8
20.2
10.0
13.2
18.2
1.0
1.6
2.6
−
14
−
mT
170 °C
10.5
13.7
20.0
9.0
12.3
18.0
0.8
1.4
2.4
−
13
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
34
Jan. 11. 2010; 000020_004ENDS
Micronas
HAL 507
DATA SHEET
mT
25
BON
BOFF
mT
25
HAL 507
BON
BOFF
BON
20
HAL 507
BONmax
20
BOFFmax
BONtyp
15
15
BOFFtyp
BOFF
10
BONmin
10
TA = −40 °C
BOFFmin
TA = 25 °C
TA = 100 °C
5
0
0
5
10
15
20
VDD = 4.5 ... 24 V
25
0
−50
30 V
Fig. 4–26: Typ. magnetic switching points
versus supply voltage
BON
BOFF
0
50
100
150
200 °C
TA, TJ
VDD
mT
25
VDD = 3.8 V
5
TA = 170 °C
HAL 507
Fig. 4–28: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BON
20
15
BOFF
10
TA = −40 °C
TA = 25 °C
TA = 100 °C
5
TA = 170 °C
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–27: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; 000020_004ENDS
35
HAL 508
DATA SHEET
4.8. HAL 508
Applications
The HAL 508 is a unipolar switching sensor (see
Fig. 4–29).
The HAL 508 is the optimal sensor for applications
with one magnetic polarity such as:
– solid state switches,
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Output Voltage
VO
Magnetic Features:
BHYS
– switching type: unipolar,
– medium sensitivity
VOL
– typical BON: 18 mT at room temperature
– typical BOFF: 16 mT at room temperature
0
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
BOFF
B
BON
Fig. 4–29: Definition of magnetic switching points for
the HAL 508
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
15.5
19
21.9
14
16.7
20
1.6
2.3
2.8
-
17.8
-
mT
15
18
20.7
13.5
16
19
1.5
2
2.7
14
17
20
mT
140 °C
13.2
15.8
20.2
11.9
14.1
18.5
1.1
1.7
2.6
-
15
-
mT
170 °C
12.7
15.3
20
11.4
13.6
18.3
1
1.7
2.6
-
14.4
-
mT
−40 °C
25 °C
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
36
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 508
DATA SHEET
mT
25
BON
BOFF
mT
25
HAL 508
20
BON
BOFF
BON
HAL 508
BONmax
20
BOFFmax
BONtyp
15
15
BOFFtyp
BONmin
BOFF
10
BOFFmin
10
TA = −40 °C
TA = 25 °C
VDD = 3.8 V
TA = 100 °C
5
5
VDD = 4.5 ... 24 V
TA = 170 °C
0
−50
0
0
5
10
15
20
25
30 V
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–30: Typ. magnetic switching points
versus supply voltage
BON
BOFF
0
mT
25
HAL 508
20
BON
Fig. 4–32: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
15
BOFF
TA = −40 °C
10
TA = 25 °C
TA = 100 °C
TA = 170 °C
5
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–31: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
37
HAL 509
DATA SHEET
4.9. HAL 509
Applications
The HAL 509 is a unipolar switching sensor (see
Fig. 4–33).
The HAL 509 is the optimal sensor for applications
with one magnetic polarity and strong magnetic fields
at the sensor position such as:
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– solid state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Output Voltage
VO
Magnetic Features:
BHYS
– switching type: unipolar,
– low sensitivity
– typical BON: 26.8 mT at room temperature
VOL
– typical BOFF: 23.2 mT at room temperature
0
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
BOFF
B
BON
Fig. 4–33: Definition of magnetic switching points for
the HAL 509
– typical temperature coefficient of magnetic switching
points is −300 ppm/K
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
23.1
27.4
31.1
19.9
23.8
27.2
2.9
3.6
3.9
−
25.6
−
mT
25 °C
23.1
26.8
30.4
19.9
23.2
26.6
2.8
3.5
3.9
21.5
25
28.5
mT
140 °C
21.7
25.7
29.2
18.6
22.4
25.6
2.6
3.3
3.8
−
24
−
mT
170 °C
21.3
25.4
28.9
18.3
22.1
25.3
2.5
3.3
3.8
−
23.7
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
38
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 509
DATA SHEET
mT
35
HAL 509
mT
35
HAL 509
BONmax
BON 30
BOFF
BON 30
BOFF
BOFFmax
BON
BONtyp
25
25
BOFFtyp
BOFF
20
BONmin
20
BOFFmin
15
15
TA = −40 °C
TA = 25 °C
10
VDD = 3.8 V
10
VDD = 4.5 ... 24 V
TA = 100 °C
TA = 170 °C
5
5
0
0
5
10
15
20
25
30 V
0
−50
Fig. 4–34: Typ. magnetic switching points
versus supply voltage
HAL 509
BON 30
BOFF
50
100
150
200 °C
TA, TJ
VDD
mT
35
0
Fig. 4–36: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BON
25
BOFF
20
15
TA = −40 °C
10
TA = 25 °C
TA = 100 °C
5
0
3.0
TA = 170 °C
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–35: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
39
HAL 516
DATA SHEET
4.10. HAL 516
Applications
The HAL 516 is the most sensitive unipolar switching
sensor with an inverted output of this family (see
Fig. 4–37).
The HAL 516 is the optimal sensor for all applications
with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output
signal is required such as:
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– applications with large air gap or weak magnets,
– solid state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
– rotating speed measurement.
Output Voltage
In the HAL 5xx family, the HAL 506 is a sensor with the
same magnetic characteristics but with a normal output characteristic.
VO
BHYS
Magnetic Features:
VOL
– switching type: unipolar inverted
– high sensitivity
0
– typical BON: 3.5 mT at room temperature
BON
B
BOFF
Fig. 4–37: Definition of magnetic switching points for
– typical BOFF: 5.5 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
the HAL 516
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
2.1
3.8
5.4
4.3
5.9
7.7
1.6
2.1
2.8
−
4.8
−
mT
2
3.5
5
3.8
5.5
7.2
1.5
2
2.7
3.8
4.5
6.2
mT
140 °C
1.8
3.1
5.1
3.4
4.8
6.9
1
1.7
2.6
−
4
−
mT
170 °C
1.7
3
5.2
3.2
4.6
6.8
0.9
1.6
2.6
−
3.8
−
mT
−40 °C
25 °C
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
40
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 516
DATA SHEET
mT
8
mT
8
HAL 516
HAL 516
BOFFmax
BON
BOFF
7
BON
BOFF
7
6
6
BOFF
5
5
4
4
BOFFtyp
BONmax
BOFFmin
BON
BONtyp
3
3
TA = −40 °C
TA = 25 °C
2
BONmin
2
TA = 100 °C
1
0
VDD = 3.8 V
1
TA = 170 °C
0
5
10
15
20
25
0
−50
30 V
Fig. 4–38: Typ. magnetic switching points
versus supply voltage
BON
BOFF
0
50
100
150
200 °C
TA, TJ
VDD
mT
8
VDD = 4.5 ... 24 V
HAL 516
7
Fig. 4–40: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BON
6
5
4
3
BOFF
TA = −40 °C
TA = 25 °C
2
TA = 100 °C
1
0
3.0
TA = 170 °C
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–39: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
41
HAL 519
DATA SHEET
4.11. HAL 519
Applications
The HAL 519 is a very sensitive unipolar switching
sensor with an inverted output sensitive only to the
magnetic north polarity (see Fig. 4–41).
The HAL 519 is the optimal sensor for all applications
with the north magnetic polarity and weak magnetic
amplitude at the sensor position where an inverted
output signal is required such as:
The output turns high with the magnetic north pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not
respond to the magnetic south pole on the branded
side, the output remains low. For correct functioning in
the application, the sensor requires only the magnetic
north pole on the branded side of the package.
– solid-state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
Output Voltage
Magnetic Features:
VO
– switching type: unipolar inverted, north sensitive
– high sensitivity
BHYS
– typical BON: −3.5 mT at room temperature
– typical BOFF: −5.5 mT at room temperature
VOL
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
BOFF
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
0 B
BON
Fig. 4–41: Definition of magnetic switching points for
the HAL 519
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
-5.4
-3.8
-2.1
-7.7
-5.9
-4.3
1.6
2.1
2.8
−
-4.8
−
mT
-5
-3.6
-2
-7.2
-5.5
-3.8
1.5
1.9
2.7
-6.2
-4.5
-3.8
mT
140 °C
-5.1
-3.1
-1.7
-6.8
-4.8
-3.1
1
1.7
2.6
−
-4
−
mT
170 °C
-5.2
-3
-1.5
-6.8
-4.6
-2.8
0.9
1.6
2.6
−
-3.8
−
mT
−40 °C
25 °C
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
42
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 519
DATA SHEET
mT
0
mT
0
HAL 519
HAL 519
TA = −40 °C
BON −1
BOFF
VDD = 3.8 V
TA = 25 °C
BON
BOFF
TA = 100 °C
−2
−1
BONmax
−2
TA = 170 °C
−3
−3
BONtyp
BON
−4
−4
−5
−5
BOFF
BOFFmax
BONmin
−6
−6 B typ
OFF
−7
−7
−8
0
5
10
15
20
30 V
25
−8
−50
Fig. 4–42: Typ. magnetic switching points
versus supply voltage
mT
0
HAL 519
TA = −40 °C
−1
BOFFmin
0
50
100
150
200 °C
TA, TJ
VDD
BON
BOFF
VDD = 4.5 V ... 24 V
TA = 25 °C
Fig. 4–44: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
TA = 100 °C
−2
TA = 170 °C
BON
−3
−4
−5
−6
BOFF
−7
−8
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–43: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
43
HAL 523
DATA SHEET
4.12. HAL 523
Applications
The HAL 523 is the least sensitive unipolar switching
sensor of this family (see Fig. 4–45).
The HAL 523 is the optimal sensor for applications
with one magnetic polarity and strong magnetic fields
at the sensor position such as:
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– solid-state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Output Voltage
VO
Magnetic Features:
BHYS
– switching type: unipolar,
– low sensitivity
VOL
– typical BON: 34.5 mT at room temperature
0
– typical BOFF: 24 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
BOFF
B
BON
Fig. 4–45: Definition of magnetic switching points for
the HAL 523
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
28
34.5
42
18
24
30
7
10.5
14
−
29.3
−
mT
25 °C
28
34.5
42
18
24
30
7
10.5
14
−
29.3
−
mT
140 °C
28
34.5
42
18
24
30
7
10.5
14
−
29.3
−
mT
170 °C
28
34.5
42
18
24
30
7
10.5
14
−
29.3
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
44
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 523
DATA SHEET
mT
45
BON
BOFF
mT
45
HAL 523
40
BON
BOFF
BON
35
30
30
BOFF
BONmax
40
35
25
HAL 523
25
BONtyp
BOFFmax
BONmin
BOFFtyp
20
20
TA = −40 °C
15
15
BOFFmin
TA = 25 °C
10
TA = 170 °C
5
0
0
10
TA = 100 °C
5
10
15
20
30 V
0
−50
0
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–46: Typ. magnetic switching points
versus supply voltage
BON
BOFF
VDD = 4.5 ... 24 V
5
25
mT
45
VDD = 3.8 V
HAL 523
40
Fig. 4–48: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for:
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BON
35
30
25
BOFF
20
TA = −40 °C
15
TA = 25 °C
10
TA = 100 °C
TA = 170 °C
5
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–47: Typ. magnetic switching points
versus supply voltage
Micronas
Jan. 11. 2010; DSH000020_004EN
45
HAL 5xy
DATA SHEET
5. Application Notes
5.3. Start-Up Behavior
5.1. Ambient Temperature
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Electrical Characteristics (see
page 15).
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
T J = T A + ΔT
Under static conditions and continuous operation, the
following equation applies:
ΔT = IDD × VDD × R th
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
During the initialization time, the output state is not
defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above
BON. The output will be high if B is below BOFF. In case
of sensors with an inverted switching behavior
(HAL 516 ... HAL 519), the output state will be high if B
> BOFF and low if B < BON.
Note: For magnetic fields between BOFF and BON, the
output state of the HAL sensor will be either low
or high after applying VDD. In order to achieve a
defined output state, the applied magnetic field
must be above BON, respectively, below BOFF.
5.4. EMC and ESD
T Amax = T Jmax – ΔT
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
5.2. Extended Operating Conditions
All sensors fulfil the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 14).
Supply Voltage Below 3.8 V
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–1). The series resistor
and the capacitor should be placed as closely as possible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
RV
220 Ω
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
1
VEMC
VP
1.2 kΩ
OUT
3
4.7 nF
Note: The functionality of the sensor below 3.8 V is
not tested on a regular base. For special test
conditions, please contact Micronas.
RL
VDD
20 pF
2 GND
Fig. 5–1: Test circuit for EMC investigations
46
Jan. 11. 2010; DSH000020_004EN
Micronas
HAL 5xy
DATA SHEET
LQWHQWLRQDOO\OHIWYDFDQW
Micronas
Jan. 11. 2010; DSH000020_004EN
47
HAL 5xy
DATA SHEET
6. Data Sheet History
1. Final data sheet: “HAL 501...506, 508, 509, 516...
518, Hall Effect Sensor Family, Aug. 11, 1999, 6251485-1DS. First release of the final data sheet.Major
changes to the previous edition “HAL501 ...
HAL506, HAL 508", Hall Effect Sensor ICs, May 5,
1997, 6251-405-1DS:
– additional types: HAL509, HAL516 ... HAL518
– additional package SOT-89B
– additional temperature range “K”
– outline dimensions for SOT-89A and TO-92UA
changed
4. Final data sheet: “HAL 5xy Hall-Effect Sensor Family”, Nov. 27, 2003, 6251-485-4DS
(DSH000020_001EN) . Fourth release of the data
sheet . Major changes:
– new package diagrams for SOT89-1 and TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
5. Final data sheet : “HAL 5xy Hall-Effect Sensor
Family”, Dec. 4, 2008, DSH000020_002EN. Fifth
release of the data sheet . Major changes:
– Section 1.6. on page 6 “Solderability and Welding”
updated
– figures “Definition of magnetic switching points”
updated for HAL508, HAL516 and HAL519
– absolute maximum ratings changed
– electrical characteristics changed
– recommended footprint SOT89-B1 added
– magnetic characteristics for HAL 501, HAL 503,HAL
506, and HAL 509 changed
2. Final data sheet: “HAL 501...506, 508, 509, 516...
519, 523, Hall Effect Sensor Family”, Feb. 14, 2001,
6251-485-2DS. Second release of the final data
sheet. Major changes:
– additional types: HAL519, HAL523
– phased-out package SOT-89A removed
– temperature range “C” removed
– outline dimensions for SOT-89B: reduced tolerances
3. Final data sheet: “HAL 501...506, 508, 509, 516...
519, 523, Hall Effect Sensor Family”, Oct. 7, 2002,
6251-485-3DS. Third release of the final data sheet.
Major changes:
– all package diagrams updated.
6. Final data sheet : “HAL 5xy Hall-Effect Sensor
Family”, Feb. 12, 2009, DSH000020_003EN. Sixth
release of the data sheet . Minor changes:
– Section 3.3. “Positions of Sensitive Areas” updated
(parameter A4 for SOT89-B1 was added).
7. Final data sheet : “HAL 5xy Hall-Effect Sensor
Family”, Jan. 11. 2010, DSH000020_004EN.
Seventh release of the data sheet.
Major changes:
– HAL 507 added
– TO92UA outline dimensions updated
– temperature range “E” removed
– outline dimensions for TO-92UA: package diagram
updated
– absolute maximum ratings changed
– section 3.4.1. added
– electrical characteristics changed
– magnetic characteristics changed
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
48
Jan. 11. 2010; DSH000020_004EN
Micronas