AO4807 30V Dual P-Channel MOSFET General Description Product Summary The AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -6A RDS(ON) (at VGS=-10V) < 35mΩ RDS(ON) (at VGS = -4.5V) < 58mΩ VDS 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 Bottom D2 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V -6 ID TA=70°C Maximum -30 -5 A IDM -30 Avalanche Current C IAS, IAR 23 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 26 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 6: Nov 2011 2 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL -55 to 150 Typ 48 74 32 www.aosmd.com °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4807 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 nA -2.4 V 21 35 31.5 45 VGS=-4.5V, ID=-5A 33 58 19 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-6A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Gate resistance A -0.8 DYNAMIC PARAMETERS Input Capacitance Ciss Rg µA ±100 Static Drain-Source On-Resistance Output Capacitance Units -1.85 VGS=-10V, ID=-6A Coss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz mΩ mΩ S -1 V -3.5 A 760 pF 140 pF 95 pF 3.2 5.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13.6 16 nC Qg(4.5V) Total Gate Charge 6.7 8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-6A VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω 1.5 2.5 nC 3.2 nC 8 ns 6 ns 17 ns tf Turn-Off Fall Time 5 ns trr Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 15 Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 9.7 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 6: Nov 2011 www.aosmd.com Page 2 of 6 AO4807 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 -10V -6V -5V -4.5V VDS=-5V 35 25 30 -ID(A) -ID (A) 20 -4V 25 20 15 -3.5V 15 10 10 125°C 5 VGS=-3V 5 0 0 0 1 2 3 4 1 5 50 2 2.5 3 3.5 4 4.5 5 1.8 Normalized On-Resistance 45 VGS=-4.5V 40 RDS(ON) (mΩ Ω) 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 35 30 25 20 VGS=-10V 15 10 VGS=-10V ID=-6A 1.6 1.4 17 5 VGS=-4.5V ID=-5A2 10 1.2 1 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 80 1.0E+02 ID=-6A 1.0E+01 40 60 1.0E+00 125°C 40 -IS (A) RDS(ON) (mΩ Ω) 25°C 125°C 25°C 1.0E-01 1.0E-02 1.0E-03 20 25°C 1.0E-04 1.0E-05 0 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 6: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4807 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-6A 1000 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 800 600 400 2 Coss 200 Crss 0 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 14 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 -IAR (A) Peak Avalanche Current 100.0 10.0 TA=100°C -ID (Amps) TA=25°C TA=150°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C TA=125°C 10s DC 0.0 10.0 0.01 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 -VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 100 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 6: Nov 2011 www.aosmd.com Page 4 of 6 AO4807 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 6: Nov 2011 www.aosmd.com Page 5 of 6 AO4807 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 6: Nov 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6