Sirectifier MBR30100PT High tjm low irrm schottky barrier diode Datasheet

MBR30100PT thru MBR30200PT
High Tjm Low IRRM Schottky Barrier Diodes
A
C
A
Dimensions TO-247AD
A
C
A
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
MBR30100PT
MBR30150PT
MBR30200PT
VRRM
V
100
150
200
VRMS
V
70
105
140
Symbol
VDC
V
100
150
200
Characteristics
Maximum DC Reverse Current
At Rated DC Blocking Voltage
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
250
A
10000
V/us
@TJ=25 oC
@TJ=125 oC
@TJ=25 oC
@TJ=125 oC
0.85
0.70
0.98
0.85
V
@TJ=25oC
@TJ=125oC
0.05
10
mA
Voltage Rate Of Change (Rated VR)
IR
19.81 20.32
20.80 21.46
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
VF
A
B
30
@TC=125oC
IFSM
Maximum Forward
Voltage (Note 1)
Typical Thermal Resistance (Note 2)
2.2
CJ
Typical Junction Capacitance Per Element (Note 3)
700
TJ
Operating Temperature Range
ROJC
TSTG
Inches
Min.
Max.
Unit
Maximum Average Forward Rectified Current
IF=15A
IF=15A
IF=30A
IF=30A
Millimeter
Min. Max.
Maximum Ratings
I(AV)
dv/dt
Dim.
Storage Temperature Range
o
C/W
pF
-55 to +150
o
-55 to +150
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
P1
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 6 grams
* Mounting position: Any
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
C
C
MBR30100PT thru MBR30200PT
High Tjm Low IRRM Schottky Barrier Diodes
100
1000
REVERSE CURRENT, IR(mA)
TJ=175¢J
TJ=175¢J
TJ=125¢J
TJ=25¢J
TJ=150¢J
1
TJ=125¢J
TJ=100¢J
0.1
TJ=75¢J
0.01
TJ=50¢J
TJ=25¢J
0.001
0.0001
0
20
40
60
80
100
REVERSE VOLTAGE, VR(V)
10
Figure 2. Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1000
JUNCTION CAPACITANCE, C T(pF)
INSTANTANEOUS FORWARD CURRENT, I F(A)
100
10
1
0.1
0
0.5
1
1.5
2
TJ=25¢J
100
2.5
0
20
FORWARD VOLTAGE DROP, VFM(V)
40
60
80
100
REVERSE VOLTAGE, VR(V)
Figure 1. Max. Forward Voltage Drop
Characteristics (PerLeg)
Figure 3. Typical Junction Capacitance Vs.
Reverse Voltage (Per Leg)
THERMAL IMPEDANCE ZthJC (C/W)
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
PDM
t1
t2
0.01
Notes:
1.Duty factor D = t1 / t2
2.Peak Tj = PDM x ZthJC + TC
SINGLE PULSE
(THERMAL RESISTANCE)
0.001
0.0000
1
0.0001
0.001
0.01
0.1
1
10
100
t1, RECTANGULAR PULSE DURATION (SECONDS)
Figure 4. Max. Thermal Impedance ZthJC Characteristics (PerLeg)
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
MBR30100PT thru MBR30200PT
High Tjm Low IRRM Schottky Barrier Diodes
14
180
AVERAGE POWER LOSS, WATTS
ALLOWABLE CASE TEMPERATURE,
D = 0.20
175
RTHJC(DC)=2.20 J /W
170
165
160
DC
155
150
145
140
0
5
10
15
20
25
30
35
D = 0.25
12
D = 0.33
D = 0.50
10
D = 0.75
8
RMS LIMIT
DC
6
4
2
0
0
AVERAGE FORWARD CURRENT, IF (AV)
Figure 5. Max. Allowable Case Temperature
Vs. Average Forward Current (PerLeg)
2
4
6
8
10 12 14 16 18 20 22 24
AVERAGE FORWARD CURRENT, IF(AV)
Figure 6. Forward PowerLoss Characteristics
(PerLeg)
NON-REPETITIVE SURGE CURRENT,
IFSM(A)
1000
AT ANY RATED LOAD CONDITION
AND WITH RATED V RRM APPLIED
FOLLOWING SURGE
100
10
100
1000
10000
SQUARE WAVE PULSE DURATION, TP(micro sec)
Figure 7. Max. Non-Repetitive Surge Current
(Per Leg)
P3
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
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