MBR30100PT thru MBR30200PT High Tjm Low IRRM Schottky Barrier Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode MBR30100PT MBR30150PT MBR30200PT VRRM V 100 150 200 VRMS V 70 105 140 Symbol VDC V 100 150 200 Characteristics Maximum DC Reverse Current At Rated DC Blocking Voltage 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 250 A 10000 V/us @TJ=25 oC @TJ=125 oC @TJ=25 oC @TJ=125 oC 0.85 0.70 0.98 0.85 V @TJ=25oC @TJ=125oC 0.05 10 mA Voltage Rate Of Change (Rated VR) IR 19.81 20.32 20.80 21.46 A Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) VF A B 30 @TC=125oC IFSM Maximum Forward Voltage (Note 1) Typical Thermal Resistance (Note 2) 2.2 CJ Typical Junction Capacitance Per Element (Note 3) 700 TJ Operating Temperature Range ROJC TSTG Inches Min. Max. Unit Maximum Average Forward Rectified Current IF=15A IF=15A IF=30A IF=30A Millimeter Min. Max. Maximum Ratings I(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +150 o -55 to +150 o NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * RoHS compliant P1 MECHANICAL DATA * Case: TO-247AD molded plastic * Polarity: As marked on the body * Weight: 6 grams * Mounting position: Any ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com C C MBR30100PT thru MBR30200PT High Tjm Low IRRM Schottky Barrier Diodes 100 1000 REVERSE CURRENT, IR(mA) TJ=175¢J TJ=175¢J TJ=125¢J TJ=25¢J TJ=150¢J 1 TJ=125¢J TJ=100¢J 0.1 TJ=75¢J 0.01 TJ=50¢J TJ=25¢J 0.001 0.0001 0 20 40 60 80 100 REVERSE VOLTAGE, VR(V) 10 Figure 2. Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg) 1000 JUNCTION CAPACITANCE, C T(pF) INSTANTANEOUS FORWARD CURRENT, I F(A) 100 10 1 0.1 0 0.5 1 1.5 2 TJ=25¢J 100 2.5 0 20 FORWARD VOLTAGE DROP, VFM(V) 40 60 80 100 REVERSE VOLTAGE, VR(V) Figure 1. Max. Forward Voltage Drop Characteristics (PerLeg) Figure 3. Typical Junction Capacitance Vs. Reverse Voltage (Per Leg) THERMAL IMPEDANCE ZthJC (C/W) 10 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 0.1 D = 0.08 PDM t1 t2 0.01 Notes: 1.Duty factor D = t1 / t2 2.Peak Tj = PDM x ZthJC + TC SINGLE PULSE (THERMAL RESISTANCE) 0.001 0.0000 1 0.0001 0.001 0.01 0.1 1 10 100 t1, RECTANGULAR PULSE DURATION (SECONDS) Figure 4. Max. Thermal Impedance ZthJC Characteristics (PerLeg) P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com MBR30100PT thru MBR30200PT High Tjm Low IRRM Schottky Barrier Diodes 14 180 AVERAGE POWER LOSS, WATTS ALLOWABLE CASE TEMPERATURE, D = 0.20 175 RTHJC(DC)=2.20 J /W 170 165 160 DC 155 150 145 140 0 5 10 15 20 25 30 35 D = 0.25 12 D = 0.33 D = 0.50 10 D = 0.75 8 RMS LIMIT DC 6 4 2 0 0 AVERAGE FORWARD CURRENT, IF (AV) Figure 5. Max. Allowable Case Temperature Vs. Average Forward Current (PerLeg) 2 4 6 8 10 12 14 16 18 20 22 24 AVERAGE FORWARD CURRENT, IF(AV) Figure 6. Forward PowerLoss Characteristics (PerLeg) NON-REPETITIVE SURGE CURRENT, IFSM(A) 1000 AT ANY RATED LOAD CONDITION AND WITH RATED V RRM APPLIED FOLLOWING SURGE 100 10 100 1000 10000 SQUARE WAVE PULSE DURATION, TP(micro sec) Figure 7. Max. Non-Repetitive Surge Current (Per Leg) P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com