MA-COM MAGX-001090-600L00 Gan on sic hemt pulsed power transistor Datasheet

MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Features
Rev. V5
MAGX-001090-600L00
 GaN on SiC Depletion-Mode Transistor
Technology
 Internally Matched
 Common-Source Configuration
 Broadband Class AB Operation
 RoHS* Compliant and 260°C Reflow Compatible
 +50 V Typical Operation
 MTTF = 600 years (TJ < 200°C)
Applications
 Civilian Air Traffic Control (ATC), L-Band
secondary radar for IFF and Mode-S avionics.
 Military radar for IFF and Data Links.
Description
The MAGX-001090-600L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon
Carbide (SiC) RF power transistor optimized for
pulsed avionics and radar applications. Using state
of the art wafer fabrication processes, these high
performance transistors provide high gain,
efficiency, bandwidth, and ruggedness over a wide
bandwidth for today’s demanding application needs.
High breakdown voltages allow for reliable and
stable operation under more extreme
mismatch
load conditions compared with older semiconductor
technologies.
MAGX-001090-600L0S
Ordering Information
Part Number
Description
MAGX-001090-600L00
Flanged
MAGX-001090-600L0S
Flangeless
MAGX-A11090-600L00
1.03 - 1.09 GHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V5
Typical RF Performance under standard operating conditions, POUT = 600 W (Peak)
Freq
(MHz)
PIN
(W)
Gain
(dB)
ID
(A)
Eff.
(%)
RL
(dB)
Droop
(dB)
+1dB OD
(W)
VSWR-S
(3:1)
VSWR-T
(5:1)
1030
4.95
20.8
20.4
58.6
-16.8
0.24
649
S
P
1090
4.50
21.3
18.6
64.4
-11.0
0.23
661
S
P
Electrical Specifications: Freq. = 1030 - 1090 MHz, TA = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests:
Standard Pulse Conditions: VDD = 50 V, IDQ = 600 mA; Pulse = 32 µs / 2%
Input Power
POUT = 600 W Peak (12 W avg.)
PIN
-
4.3
6.7
Wpk
Power Gain
POUT = 600 W Peak (12 W avg.)
GP
19.5
21.4
-
dB
Drain Efficiency
POUT = 600 W Peak (12 W avg.)
ηD
55
63
-
%
Pulse Droop
POUT = 600 W Peak (12 W avg.)
Droop
-
0.2
0.3
dB
Load Mismatch Stability
POUT = 600 W Peak (12 W avg.)
VSWR-S
-
3:1
-
-
Load Mismatch Tolerance
POUT = 600 W Peak (12 W avg.)
VSWR-T
-
5:1
-
-
1
Mode-S ELM Pulse Width Conditions : VDD = 50 V, IDQ = 400 mA;
48 pulses of 32 µs on and 18 µs off, repeat every 24 ms; Overall Duty Factor = 6.4%
Input Power
POUT = 550 W Peak (35.2 W avg.)
PIN
-
4.6
-
Wpk
Power Gain
POUT = 550 W Peak (35.2 W avg.)
GP
-
20.7
-
dB
Drain Efficiency
POUT = 550 W Peak (35.2 W avg.)
ηD
-
61
-
%
1. For Mode-S ELM pulse conditions, RF power is measured at the middle of the 25th pulse in the burst (t ~ 1.216 ms)
Electrical Characteristics: TA = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
VGS = -8 V, VDS = 175 V
IDS
-
1.0
30
mA
Gate Threshold Voltage
VDS = 5 V, ID = 75 mA
VGS (TH)
-5
-3.1
-2
V
Forward Transconductance
VDS = 5 V, ID = 17.5 mA
GM
12.5
19.2
-
S
Input Capacitance
Not applicable - Input matched
CISS
N/A
N/A
N/A
pF
Output Capacitance
VDS = 50 V, VGS = -8 V, F = 1 MHz
COSS
-
55
-
pF
Reverse Transfer Capacitance
VDS = 50 V, VGS = -8 V, F = 1 MHz
CRSS
-
5.5
-
pF
DC Characteristics:
Dynamic Characteristics:
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V5
Absolute Maximum Ratings2,3,4,5
2.
3.
4.
5.
Parameter
Limit
Supply Voltage (VDD)
+65 V
Supply Voltage (VGS)
-8 to -2 V
Supply Current (IDMAX)
80 A
Input Power (PIN)
PIN (nominal) + 3 dB
Absolute Max. Junction/Channel Temp
200ºC
Pulsed Power Dissipation at 85 ºC
3.5 kW
Thermal Resistance, (TJ= 70 ºC)
VDD = 50 V, IDQ = 600 mA, Pout = 600 W, 32 µs Pulse / 2% Duty
0.05 ºC/W
Operating Temp
-40 to +95ºC
Storage Temp
-65 to +150ºC
Mounting Temperature
See solder reflow profile
ESD Min. - Charged Device Model (CDM)
1300 V
ESD Min. - Human Body Model (HBM)
4000 V
Operation of this device above any one of these parameters may cause permanent damage.
Input Power Limit is +3 dB over nominal drive required to achieve P OUT = 600 W.
Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
For saturated performance it recommended that the sum of (3*V DD + abs(VGG)) <175 V.
Correct Device Sequencing
Test Fixture Impedances
F (MHz)
ZIF (Ω)
ZOF (Ω)
1030
1.1 - j1.5
1.5 + j0.5
1060
1.1 - j1.4
1.5 + j0.6
1090
1.1 - j1.3
1.5 + j0.6
Zif
INPUT
NETWORK
OUTPUT
NETWORK
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (50 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS
Zof
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V5
Test Fixture Circuit Dimensions
Test Fixture Assembly
Contact factory for gerber file or additional circuit information.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V5
RF Power Transfer Curve (Output Power Vs. Input Power)
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V5
Typical RF Data with Mode-S ELM ‘pulse’ conditions:
48 pulses of 32 µs on and 18 µs off, repeat every 24ms; Overall Duty Factor = 6.4%
VDD = 50 V; IDQ = 400 mA
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V5
Outline Drawing MAGX-001090-600L00
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V5
Outline Drawing MAGX-001090-600L0S
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
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