MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Features Rev. V5 MAGX-001090-600L00 GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260°C Reflow Compatible +50 V Typical Operation MTTF = 600 years (TJ < 200°C) Applications Civilian Air Traffic Control (ATC), L-Band secondary radar for IFF and Mode-S avionics. Military radar for IFF and Data Links. Description The MAGX-001090-600L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. MAGX-001090-600L0S Ordering Information Part Number Description MAGX-001090-600L00 Flanged MAGX-001090-600L0S Flangeless MAGX-A11090-600L00 1.03 - 1.09 GHz Evaluation Board * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V5 Typical RF Performance under standard operating conditions, POUT = 600 W (Peak) Freq (MHz) PIN (W) Gain (dB) ID (A) Eff. (%) RL (dB) Droop (dB) +1dB OD (W) VSWR-S (3:1) VSWR-T (5:1) 1030 4.95 20.8 20.4 58.6 -16.8 0.24 649 S P 1090 4.50 21.3 18.6 64.4 -11.0 0.23 661 S P Electrical Specifications: Freq. = 1030 - 1090 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: Standard Pulse Conditions: VDD = 50 V, IDQ = 600 mA; Pulse = 32 µs / 2% Input Power POUT = 600 W Peak (12 W avg.) PIN - 4.3 6.7 Wpk Power Gain POUT = 600 W Peak (12 W avg.) GP 19.5 21.4 - dB Drain Efficiency POUT = 600 W Peak (12 W avg.) ηD 55 63 - % Pulse Droop POUT = 600 W Peak (12 W avg.) Droop - 0.2 0.3 dB Load Mismatch Stability POUT = 600 W Peak (12 W avg.) VSWR-S - 3:1 - - Load Mismatch Tolerance POUT = 600 W Peak (12 W avg.) VSWR-T - 5:1 - - 1 Mode-S ELM Pulse Width Conditions : VDD = 50 V, IDQ = 400 mA; 48 pulses of 32 µs on and 18 µs off, repeat every 24 ms; Overall Duty Factor = 6.4% Input Power POUT = 550 W Peak (35.2 W avg.) PIN - 4.6 - Wpk Power Gain POUT = 550 W Peak (35.2 W avg.) GP - 20.7 - dB Drain Efficiency POUT = 550 W Peak (35.2 W avg.) ηD - 61 - % 1. For Mode-S ELM pulse conditions, RF power is measured at the middle of the 25th pulse in the burst (t ~ 1.216 ms) Electrical Characteristics: TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - 1.0 30 mA Gate Threshold Voltage VDS = 5 V, ID = 75 mA VGS (TH) -5 -3.1 -2 V Forward Transconductance VDS = 5 V, ID = 17.5 mA GM 12.5 19.2 - S Input Capacitance Not applicable - Input matched CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 55 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 5.5 - pF DC Characteristics: Dynamic Characteristics: 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V5 Absolute Maximum Ratings2,3,4,5 2. 3. 4. 5. Parameter Limit Supply Voltage (VDD) +65 V Supply Voltage (VGS) -8 to -2 V Supply Current (IDMAX) 80 A Input Power (PIN) PIN (nominal) + 3 dB Absolute Max. Junction/Channel Temp 200ºC Pulsed Power Dissipation at 85 ºC 3.5 kW Thermal Resistance, (TJ= 70 ºC) VDD = 50 V, IDQ = 600 mA, Pout = 600 W, 32 µs Pulse / 2% Duty 0.05 ºC/W Operating Temp -40 to +95ºC Storage Temp -65 to +150ºC Mounting Temperature See solder reflow profile ESD Min. - Charged Device Model (CDM) 1300 V ESD Min. - Human Body Model (HBM) 4000 V Operation of this device above any one of these parameters may cause permanent damage. Input Power Limit is +3 dB over nominal drive required to achieve P OUT = 600 W. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. For saturated performance it recommended that the sum of (3*V DD + abs(VGG)) <175 V. Correct Device Sequencing Test Fixture Impedances F (MHz) ZIF (Ω) ZOF (Ω) 1030 1.1 - j1.5 1.5 + j0.5 1060 1.1 - j1.4 1.5 + j0.6 1090 1.1 - j1.3 1.5 + j0.6 Zif INPUT NETWORK OUTPUT NETWORK Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS Zof 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V5 Test Fixture Circuit Dimensions Test Fixture Assembly Contact factory for gerber file or additional circuit information. 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V5 RF Power Transfer Curve (Output Power Vs. Input Power) RF Power Transfer Curve (Drain Efficiency Vs. Output Power) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V5 Typical RF Data with Mode-S ELM ‘pulse’ conditions: 48 pulses of 32 µs on and 18 µs off, repeat every 24ms; Overall Duty Factor = 6.4% VDD = 50 V; IDQ = 400 mA 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V5 Outline Drawing MAGX-001090-600L00 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V5 Outline Drawing MAGX-001090-600L0S 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport