GBPC50M SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 50A GBPC5006M Thru GBPC5012M FEATURES UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA High surge current capability Low thermal resistance Solder dip 260°C, 10s Compliant to RoHS Glass passivated chips Epoxy molding body TYPICAL APPLICATIONS Front Rear General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. MECHANICAL DATA - ~ ~ + Case: GBPC molding type. Epoxy meets UL 94 V-O flammability rating Terminals: Nickel plated on faston lugs, solderable per J-STD-002 and JESD22-B102. Polarity: As marked,positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 15g (0.53 ozs) 32.0 ± 0.2 6.35 ± 0.2 - ~ ~ + 15 ± 0.2 www.nellsemi.com 1 ± 0.2 Aluminum base plate 13.3 ± 0.2 All dimensions in millimeters Page 1 of 4 28 ± 0.2 Ø10.00±0.2 8.9 ± 0.2 0.85 ± 0.2 26 ± 0.2 32 ± 0.2 Ø5. 50±0.2 5 ± 0.2 GBPC50M SEMICONDUCTOR RoHS RoHS Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 50A V RRM 600V to 1200V I FSM 500A IR 5 µA VF 1.1V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) GBPC50..M PARAMETER UNIT SYMBOL 06 08 10 12 Maximum repetitive peak reverse voltage V RRM 600 800 1000 1200 V Maximum RMS voltage V RMS 420 560 700 840 V Maximum DC blocking voltage V DC 600 800 1000 1200 V Maximum average forward rectified output current (Fig.1) I F(AV) 50 A I FSM 500 A I 2t 1250 A 2s V ISO 2500 V T J ,T STG -55 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Rating (non-repetitive, for t greater than 1 ms and less than 10 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking GBPC50..M TEST CONDITIONS SYMBOL I F = 25A VF T A = 25°C voltage per diode T A = 150°C Typical junction capacitance per diode 4V, 1MHz 06 08 10 12 1.1 V 5 IR UNIT µA 500 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) GBPC50..M PARAMETER SYMBOL Typical thermal resistance (Junction to case) R θJC (1) 06 08 10 1.0 UNIT 12 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 4 GBPC50M SEMICONDUCTOR RoHS RoHS Nell High Power Products Ordering Information Tabel Device code GBPC 50 10 M 1 2 3 4 1 - Module type: "GBPC" Package, 1Φ Bridge 2 - lF(AV) rating : "50" for 50A 3 - Voltage code : code x 100 = V RRM 4 - "M" for Epoxy molded type. Fig.2 Maximum output rectified current 70 60 60 50 Average forward current (A) Average forward current (A) Fig.1 Maximum output rectified current 50 40 Bridges Mounted on 30 5x4x3” AL, Finned Plate 20 60 HZ Resistive or lnductive Load 10 0 0 20 40 60 80 100 120 140 40 30 RthSA = 0.5 °C/W 20 10 0 160 0 10 20 30 40 50 60 70 80 90 Case temperature (°C) Ambient temperature (°C) Fig.3 Maximum non-repetitive peak forward surge current per diode Fig.4 Typical Instantaneous forward characteristics per diode 1000 100 100 Instantaneous forward current (A) Peak forward surge current (A) 60 HZ Resistive or lnductive Load T J = T J Max. 0.5 ms Single Sine-Wave 100 10 T J = 25°C 1 1.0 Cycle 10 1 10 0.1 0.5 100 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Number of Cycles at 60 Hz Instantaneous forward voltage (V) www.nellsemi.com Page 3 of 4 1.3 GBPC50M SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Typical reveres leakage characteristics per diode Instantaneous reverse leakage current (µA) 1000 T J = 125°C 100 10 1 T J = 25°C 0.1 0 10 20 30 40 50 60 70 80 90 100 Percent of rated peak reverse voltage (%) www.nellsemi.com Page 4 of 4