BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.1, 2016-03-16 RF & Protection Devices Edition 2016-03-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2016 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFR740L3RH Revision History: 2016-03-16, Revision 2.1 Page Subjects (major changes since last revision) Revision 2.0 This data sheet replaces the revision from 2010-09-08. The reason for the new revision is to increase the information content for the circuit designer. The performance parameters are now enlisted in a table containing many relevant application frequencies. The measurement of typical devices have been repeated and the device description has been expanded by adding several new charasteristic curves. For customers who bought the product prior to the issue of the new revision the old specification remain valid. There is no reason to adjust existing applications. Revision 2.1, page 11 Table 7-2: typical value for fT has been corrected to value as in Figure 7-7 Revision 2.1, page 17 Figure 7-2 has been reformatted for clearness Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 2.1, 2016-03-16 BFR740L3RH Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 7.1 7.2 7.3 7.4 7.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 9 Package Information TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Data Sheet 4 11 11 11 12 17 20 Revision 2.1, 2016-03-16 BFR740L3RH List of Figures List of Figures Figure 6-1 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Figure 7-5 Figure 7-6 Figure 7-7 Figure 7-8 Figure 7-9 Figure 7-10 Figure 7-11 Figure 7-12 Figure 7-13 Figure 7-14 Figure 7-15 Figure 7-16 Figure 7-17 Figure 7-18 Figure 7-19 Figure 7-20 Figure 9-1 Figure 9-2 Figure 9-3 Figure 9-4 Data Sheet Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFR740L3RH Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . . 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Footprint of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Layout of TSLP-3-9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 12 17 17 18 18 19 20 20 21 21 22 22 23 23 24 24 25 25 26 26 28 28 28 28 Revision 2.1, 2016-03-16 BFR740L3RH List of Tables List of Tables Table 5-1 Table 6-1 Table 7-1 Table 7-2 Table 7-3 Table 7-4 Table 7-5 Table 7-6 Table 7-7 Table 7-8 Table 7-9 Table 7-10 Table 7-11 Table 7-12 Data Sheet Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 12 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision 2.1, 2016-03-16 BFR740L3RH Product Brief 1 Product Brief The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of approximately 40 GHz and is suited for low voltage applications (VCEO,max = 4 V) from VHF to 12 GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. The BFR740L3RH is housed in a very thin small leadless package ideal for modules. 2 • • • • • Features Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V Very thin small leadless package (height only 0.31 mm), hence ideal for modules with compact size and low profile height Pb-free (RoHS compliant) and halogen-free package Qualification report according to AEC-Q101 available TSLP-3-9 3 Applications As Low Noise Amplifier (LNA) in • • • • • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Data Sheet 7 Revision 2.1, 2016-03-16 BFR740L3RH Pin Configuration 4 Pin Configuration Product Name BFR740L3RH TSLP-3-9 1)See “Package Information TSLP-3-9” on Page 28 Data Sheet Pin Configuration1) Package 1=B 8 2=C 3=E Marking R9 Revision 2.1, 2016-03-16 BFR740L3RH Maximum Ratings 5 Maximum Ratings Table 5-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Collector emitter voltage Values Min. Max. – – 4.0 3.5 Unit V VCEO Note / Test Condition Open base TA = 25°C TA = -55°C Collector emitter voltage VCES – 13 V E-B short circuited Collector base voltage VCBO – 13 V Open emitter Emitter base voltage VEBO – 1.2 V Open collector Collector current IC – 40 mA – IB – 4 mA – Ptot – 160 mW TS ≤ 105 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 150 °C – Base current Total power dissipation 1) 1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 2.1, 2016-03-16 BFR740L3RH Thermal Characteristics 6 Thermal Characteristics Table 6-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – 280 – K/W – 1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 180 160 140 Ptot [mW] 120 100 80 60 40 20 0 0 25 50 75 T [°C] 100 125 150 S Figure 6-1 Total Power Dissipation Ptot = f (TS) Data Sheet 10 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 7 Electrical Characteristics 7.1 DC Characteristics Table 7-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Min. Typ. Max. 4 4.7 – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base Collector emitter leakage current ICES – 1 1 400 40 nA VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0 E-B short circuited Collector base leakage current ICBO – 1 40 nA VCB = 5V, IE = 0 Open emitter Emitter base leakage current IEBO – 1 40 DC current gain hFE 160 250 400 nA VEB = 0.5V, IC = 0 Open collector VCE = 3 V, IC = 25 mA Pulse measured 7.2 General AC Characteristics Table 7-2 General AC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Transition frequency fT – 42 – GHz VCE = 3 V, IC = 25 mA f = 2 GHz Collector base capacitance CCB – 0.09 0.12 pF VCB = 3 V, VBE = 0 f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.3 – pF VCE = 3 V, VBE = 0 f = 1 MHz Base grounded Emitter base capacitance CEB – 0.4 – pF VEB = 0.5 V,VCB = 0 f = 1 MHz Collector grounded Data Sheet 11 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 7.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias-T´s in a 50 Ω system, TA = 25 °C 3 VC VB GND Bias -T RFIn In Bias -T RFOut 1 Out 2 TSLP-3-9 testing circuit Figure 7-1 BFR740L3RH Testing Circuit Table 7-3 AC Characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Typ. Unit Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 35 29.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.45 27.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 3.5 21 – – Table 7-4 IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 0.45 GHz Parameter Power Gain Maximum power gain Transducer gain Data Sheet Note / Test Condition Symbol Values Min. Typ. Max. – – 31 29 – – dB Gms |S21|2 12 IC = 15 mA IC = 15 mA Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics Table 7-4 AC Characteristics, VCE = 3 V, f = 0.45 GHz (cont’d) Parameter Minimum Noise Figure Minimum noise figure Associated gain Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet Symbol Values Unit Min. Typ. Max. – – 0.45 26.5 – – Note / Test Condition dB NFmin Gass IC = 6 mA IC = 6 mA dBm OP1dB OIP3 – – 7 21 13 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics Table 7-5 AC Characteristics, VCE = 3 V, f = 0.9 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 28 27 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.45 25 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 8 22.5 – – Table 7-6 dB Symbol Values Min. Typ. IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 25.5 25 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.5 22.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 8 23 – – IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Power Gain Maximum power gain Transducer gain Symbol Values Min. Typ. Max. – – 24.5 23.5 – – dB Gms |S21|2 IC = 15 mA IC = 15 mA dB Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.5 21 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 8 23 – – Data Sheet IC = 15 mA IC = 15 mA AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Table 7-7 Note / Test Condition IC = 6 mA IC = 6 mA dBm 14 ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics Table 7-8 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 23.5 21.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.5 19.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 8 23 – – Table 7-9 Note / Test Condition IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 22 18.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.6 16.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 9 24.5 – – IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition Table 7-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Power Gain Maximum power gain Transducer gain Symbol Values Min. Typ. Max. – – 20 14.5 – – dB Gms |S21|2 dB Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.8 13 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 9.5 25 – – Data Sheet IC = 15 mA IC = 15 mA IC = 6 mA IC = 6 mA dBm 15 ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics Table 7-11 AC Characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 13 9 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.3 8.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 9 24 – – IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition Table 7-12 AC Characteristics, VCE = 3 V, f = 12 GHz Parameter Symbol Values Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 11 7 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.5 7.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 6.5 20.5 – – IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 16 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 7.4 Characteristic DC Diagrams 30 120µA 100µA 25 80µA 20 15 C I [mA] 60µA 40µA 10 20µA 5 0 0 0.5 1 1.5 2 V 2.5 3 3.5 4 [V] CE Figure 7-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA 3 hFE 10 2 10 −3 10 −2 10 I [A] −1 10 C Figure 7-3 DC Current Gain hFE = f (IC), VCE = 3 V Data Sheet 17 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 2 10 1 10 0 IC [mA] 10 −1 10 −2 10 −3 10 −4 10 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Figure 7-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V 0 10 −1 10 −2 10 IB [mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Figure 7-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V Data Sheet 18 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics −5 10 −6 10 −7 10 IB [A] −8 10 −9 10 −10 10 −11 10 −12 10 1 1.5 2 VEB [V] 2.5 3 Figure 7-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V Data Sheet 19 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 7.5 Characteristic AC Diagrams Measurement setup is a test fixture with Bias-T´s in a 50 Ω system, TA = 25 °C. 45 40 35 4.00V 30 fT [GHz] 3.00V 25 2.50V 20 2.00V 15 10 1.00V 5 0 0 5 10 15 20 25 I [mA] 30 35 40 45 C Figure 7-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V 28 26 24 22 20 OIP3 [dBm] 18 16 14 12 10 8 2V, 2400MHz 3V, 2400MHz 2V, 5500MHz 3V, 5500MHz 6 4 2 0 0 5 10 15 I [mA] C 20 25 30 Figure 7-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters Data Sheet 20 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 16 17 8 1 19 21 20 25 24 27 23 22 26 20 IC [mA] 20 25 21 1 165 17 19 18 25 24 22 23 26 11 12 13 14 30 15 26 23 22 24 25 21 25 20 10 24 3 22 2 24 21 20 5 22 1.5 2 23 22 23 22 1921 20 2.5 3 24 1921 20 3.5 4 VCE [V] 13 12 11 8 9 7 3 4 30 10 Figure 7-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz 8 10 7 9 5 6 25 12 11 IC [mA] 20 11 10 15 10 9 9 8 7 6 10 8 7 7 6 6 5 4 3 2 1 5 1.5 9 8 2 6 5 4 3 2 1 2.5 5 4 3 2 1 3 1 3.5 4 VCE [V] Figure 7-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz Data Sheet 21 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 0.2 CCB [pF] 0.16 0.12 0.08 0.04 0 0 0.4 0.8 1.2 1.6 2 V CB 2.4 2.8 3.2 3.6 4 [V] Figure 7-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 35 30 Gms G [dB] 25 20 G 2 |S21| ma 15 10 5 0 0 1 2 3 4 5 6 7 f [GHz] 8 9 10 11 12 Figure 7-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 15 mA Data Sheet 22 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz Gmax [dB] 25 20 5.50GHz 15 10.00GHz 12.00GHz 10 5 0 0 5 10 15 20 25 30 I [mA] 35 40 45 50 C Figure 7-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 40 35 0.15GHz 30 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz Gmax [dB] 25 20 15 10.00GHz 12.00GHz 10 5 0 0 0.5 1 1.5 2 V 2.5 3 [V] 3.5 4 4.5 5 CE Figure 7-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz Data Sheet 23 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 12.0 4 12.0 0.2 5 1 to 12 GHz Step: 1GHz 0.1 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 10 4 5 0.1 −0.1 −10 0.1 −0.2 −5 −4 −0.3 −3 −0.4 1.0 1.0 −0.5 −2 6.0mA −1.5 −1 15.0mA Figure 7-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 4 5.5 0.2 5 3.5 2.4 8.0 0.1 1.9 1.5 5.5 10.0 0.1 0 8.0 0.2 0.3 0.4 0.5 10.0 3.5 2.4 1.9 1.5 0.9 1 1.5 0.5 10 0.9 2 3 4 5 0.5 12.0 12.0 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 6mA 15mA −1.5 −1 Figure 7-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 15 mA Data Sheet 24 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 1 to 12 GHz Step: 1GHz 0.1 0.1 0 0.2 0.3 0.4 0.5 12.0 1 1.5 2 10 3 4 5 12.0 0.1 0.1 −0.1 −10 −0.2 −5 1.0 −0.3 −4 1.0 −3 −0.4 −0.5 −2 6.0mA −1.5 15.0mA −1 Figure 7-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 15 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 0.6 IC = 15mA 0.4 I = 6mA C 0.2 0 0 2 4 6 f [GHz] 8 10 12 Figure 7-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt Data Sheet 25 Revision 2.1, 2016-03-16 BFR740L3RH Electrical Characteristics 3 2.8 f = 12GHz 2.6 f = 10GHz 2.4 f = 5.5GHz 2.2 f = 3.5GHz NFmin [dB] 2 1.8 f = 2.4GHz 1.6 f = 0.9GHz 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 IC [mA] 15 20 Figure 7-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz 3 2.8 f = 12GHz 2.6 f = 10GHz 2.4 f = 5.5GHz f = 3.5GHz f = 2.4GHz 2.2 NF50 [dB] 2 f = 0.9GHz 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 IC [mA] 15 20 Figure 7-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. Data Sheet 26 Revision 2.1, 2016-03-16 BFR740L3RH Simulation Data 8 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR740L3RH SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFR740L3RH SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 27 Revision 2.1, 2016-03-16 BFR740L3RH Package Information TSLP-3-9 Package Information TSLP-3-9 Top view Bottom view 0.4 ±0.035 1) 9 0.6 ±0.05 0.31+0.01 -0.02 2 1 0.35 ±0.05 Pin 1 marking 1±0.05 3 2 x 0.25 ±0.035 1) 0.575 ±0.05 0.5 ±0.035 1) 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal TSLP-3-9-PO V01 0.225 0.2 0.2 0.17 0.225 0.15 Copper Solder mask 0.315 0.5 0.95 0.2 0.35 1 0.45 R0.19 0.255 0.6 0.38 Figure 9-1 Package Outline of TSLP-3-9 R0.1 Stencil apertures TSLP-3-9-FP V01 Figure 9-2 Footprint of TSLP-3-9 Pin 1 marking Laser marking XY Type Code TSLP-3-9 _marking V01.vsd Figure 9-3 Marking Layout of TSLP-3-9 0.35 Pin 1 marking 8 1.2 4 0.8 TSLP-3-9-TP V02 Figure 9-4 Tape of TSLP-3-9 Data Sheet 28 Revision 2.1, 2016-03-16 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG