Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 1/9 CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTB20A04Q8 BVDSS ID@ VGS=10V, TC=25°C ID@ VGS=10V, TA=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=4A 40V 13.4A 8.4A 16mΩ(typ) 18mΩ(typ) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & halogen-free package Equivalent Circuit Outline SOP-8 MTB20A04Q8 D2 D2 D1 D1 G：Gate S：Source D：Drain Pin 1 S1 G1 S2 G2 Ordering Information Device MTB20A04Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB20A04Q8 CYStek Product Specification Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current VDS VGS ID IDM Power Dissipation for Dual Operation PD Power Dissipation for Single Operation Operating Junction and Storage Temperature Range Tj, Tstg Limits Unit 40 ±20 13.4 9.5 8.4 (Note 2) 7.0 (Note 2) 54 (Note 1) 3 2.4 (Note 2) 1.2 (Note 3) -55~+175 V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Symbol RθJC Thermal Resistance, Junction-to-ambient, max RθJA Value 25 62.5 (Note 2) 125 (Note 3) Unit °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3. Surface mounted on minimum copper pad, pulse width≤10s. Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. BVDSS VGS(th) GFS IGSS 40 1.0 - 7.6 16 18 2.5 ±100 1 25 20 25 - 19.5 2.7 3.9 8.2 17.4 36.6 6 - Unit Test Conditions Static *1 IDSS RDS(ON) *1 V S nA μA mΩ VGS=0V, ID=250μA VDS =VGS, ID=250μA VDS =10V, ID=5A VGS=±20V, VDS=0V VDS =32V, VGS =0V VDS =32V, VGS =0V, Tj=125°C VGS =10V, ID=8A VGS =4.5V, ID=4A Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 MTB20A04Q8 nC VDS=20V, ID=8A, VGS=10V ns VDS=20V, ID=8A, VGS=10V, RG=3Ω CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 797 69 55 - - 0.75 9.4 5.7 8 24 1 - pF Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 3/9 VGS=0V, VDS=20V, f=1MHz A V ns nC IS=1A, VGS=0V IF=8A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB20A04Q8 CYStek Product Specification Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 30 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V,4V ID, Drain Current (A) 25 20 VGS=3V 15 10 1.2 1 0.8 ID=250μA, VGS=0V 0.6 5 0.4 0 0 1 2 3 4 VDS, Drain-Source Voltage(V) -75 -50 -25 5 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 VSD, Source-Drain Voltage(V) RDS(on) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 0.2 10 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 2.8 ID=8A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 2 80 60 40 20 2.4 VGS=10V, ID=8A 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 16mΩ 0.4 0 0 0 MTB20A04Q8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current 10 VDS=10V 1 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 75 100 125 150 175 200 Gate Charge Characteristics 10 VDS=15V 0.1 Ta=25°C Pulsed 8 6 4 2 VDS=20V ID=8A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 1ms 10ms TA=25°C, Tj=175°C VGS=10V, RθJA=62.5°C/W Single Pulse 1s DC 8 7 6 5 4 3 TA=25°C, VGS=10V, RθJA=62.5°C/W 2 1 0 0.01 MTB20A04Q8 ID, Maximum Drain Current(A) 100μs 100ms 0.01 20 9 RDSON Limited 1 0.1 8 12 16 Qg, Total Gate Charge(nC) 10 100 10 4 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 300 30 20 Power (W) ID, Drain Current(A) 250 VDS=10V 25 15 200 150 10 100 5 50 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 TJ(MAX) =175°C TA=25°C RθJA=62.5°C/W 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=62.5°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB20A04Q8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB20A04Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB20A04Q8 CYStek Product Specification Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name Date Code B20 A04 Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB20A04Q8 CYStek Product Specification